US5310446A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing semiconductor film
Assignee: Ricoh Co Ltd
•
Filing: 1992-07-13
•
Granted: 1994-05-10
•
Expires: 2012-07-13
Abstract
Abstract A method for producing a semiconductor film comprising steps of: preparing a first substrate and a second substrate; superposing the first substrate on the second substrate to form an assembly of combined substrates; applying energy to the assembly of combined substrates to melt a portion within the assembly to form a molten portion therein; cooling the molten portion to crystallize the portion to form a single crystal structure therein; and separating the first substrate from the second substrate. The method makes it possible to control the crystal axis orientation of the recrystallized single crystal structure.
Inventors
- 👤 Junichi Konishi
- 👤 Kouichi Maari
- 👤 Toshihiko Taneda
- 👤 Akiko Kishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:47
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B11/00; C30B13/00; H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0321; H10D30/0323; H10P; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; Y; Y10; Y10S; Y10S148/00; Y10S148/093
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
117 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and (e) separating said first substrate from said second substrate.
Claim 2
Independent Claim
117 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion to crystallize said molten portion of said semiconductor layer to form a single crystal semiconductor structure therein; and (e) separating said first substrate from said second substrate.
Claim 3
Dependent Claim
48 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said second substrate comprises a plate member and an electrically insulating film formed thereon which has a stronger affinity for said single crystal formed in said molten portion than that of said first substrate.
Claim 4
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said second substrate comprises a plate member and an amorphous silicon film formed thereon.
Claim 5
Dependent Claim
30 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said first substrate has at least one protrusion at a portion corresponding to said molten portion.
Claim 6
Dependent Claim
33 words
A method for producing a semiconductor single crystal film according to claim 1, wherein a cooling means is disposed on the first substrate side while applying said energy to said assembly of substrates.
Claim 7
Dependent Claim
21 words
A method for producing a semiconductor single crystal film according to claim 1, wherein said first substrate comprises a sapphire plate.
Claim 8
Dependent Claim
29 words
A method for producing a semiconductor single crystal film according to claim 6, wherein said first substrate further comprises a single crystal silicon film formed on said sapphire plate.
Claim 9
Independent Claim
147 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion; and (e) separating said first substrate from said second substrate.
Claim 10
Independent Claim
147 words
A method for producing a semiconductor single crystal film comprising the steps of: (a) preparing a first substrate and a second substrate, wherein said first substrate is essentially constituted by a single crystal and having a surface at least partially comprising a semiconductor layer; (b) superposing said first substrate on said second substrate to form an assembly of substrates combined in such a manner that said semiconductor layer contacts a surface of said second substrate; (c) applying energy to said assembly of substrates to form a molten portion of said semiconductor layer therein; (d) cooling said molten portion so as to crystallize said molten portion of said semiconductor layer while imparting a crystal orientation of single crystal of said first substrate to said molten portion thereby to form a single crystal semiconductor structure in said molten portion; and (e) separating said first substrate from said second substrate.
Claim 11
Dependent Claim
48 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and an electrically insulating film formed thereon which has a stronger affinity for said single crystal formed in said motion portion than that of said first substrate.
Claim 12
Dependent Claim
27 words
A method for producing a semiconductor single crystal film according to claim 9, wherein said second substrate further comprises an amorphous film formed on said insulating film.
Claim 13
Dependent Claim
27 words
A method for producing a semiconductor single crystal according to claim 9, wherein said second substrate further comprises a polycrystalline silicon film formed on said insulating film.
Claim 14
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and a polycrystalline silicon film formed thereon.
Claim 15
Dependent Claim
28 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said second substrate comprises a plate member and an amorphous silicon film formed thereon.
Claim 16
Dependent Claim
30 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said first substrate has at least one protrusion at a portion corresponding to said molten portion.
Claim 17
Dependent Claim
24 words
A method for producing a semiconductor single crystal film according to claim 8, wherein an energy beam is used to form said molten portion.
Claim 18
Dependent Claim
33 words
A method for producing a semiconductor single crystal film according to claim 15, wherein a cooling means is disposed on the first substrate side while applying said energy to said assembly of substrates.
Claim 19
Dependent Claim
39 words
A method for producing a semiconductor single crystal according to claim 15, wherein said energy beam is irradiated to said assembly through a mask having a pattern of a single crystal film to be formed on said second substrate.
Claim 20
Dependent Claim
21 words
A method for producing a semiconductor single crystal film according to claim 8, wherein said first substrate comprises a sapphire plate.
Claim 21
Dependent Claim
29 words
A method for producing a semiconductor single crystal film according to claim 18, wherein said first substrate further comprises a single crystal silicon film formed on said sapphire plate.
References Cited (Backward Citations)
US3771026A
Cited
US3941647A
Cited
US3996095A
Cited
US3961997A
Cited
US4059461A
Cited
US4091169A
Cited
US4180618A
Cited
US4292091A
Cited
JPS5638057A
Cited
US4292730A
Cited
US4727047A
Cited
EP0047140A2
Cited
EP0057135A2
Cited
US4472729A
Cited
EP0078681A2
Cited
US4396456A
Cited
US4415383A
Cited
US4523962A
Cited
US4437139A
Cited
JPS59175721A
Cited
US4545823A
Cited
JPS6163019A
Cited
US4659587A
Cited
JPS6197964A
Cited
JPS61102723A
Cited
DD234529A1
Cited
DE3508469A1
Cited
US4643950A
Cited
US4795679A
Cited
DE3620300A1
Cited
JPS6240858A
Cited
US4822752A
Cited
JPS62219510A
Cited
US4822751A
Cited
US4732801A
Cited
US4717681A
Cited
US4819037A
Cited
US4794445A
Cited
US4752590A
Cited
US4847157A
Cited
JPS6365641A
Cited
US4915772A
Cited
US4826785A
Cited
US4984048A
Cited
US5060041A
Cited
US4885052A
Cited
US5066610A
Cited
US5173446A
Cited
US5108843A
Cited
US4990464A
Cited
US5073815A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-09 | 1997-11-08 | 1998-05-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-09 | 2001-11-08 | 2002-05-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-09 | 2005-11-08 | 2006-05-10 | $7700.00 | Window Closed / Lapsed |