US5308790A
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US
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Selective sidewall diffusion process using doped SOG
Assignee: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Filing: 1992-10-16
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Granted: 1994-05-03
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Expires: 2012-10-16
Abstract
Abstract A selective sidewall diffusion process using doped SOG. A substrate is processed to form raised portions or pedestals, having sidewalls, and trenches. A first layer, either a doped SOG layer or undoped oxide layer, may be deposited onto the substrate adjacent the sidewalls. The first layer is densified. A second layer may be deposited on the first layer. The second layer is a doped SOG layer. The second layer is densified and the dopant is driven into the sidewalls to form shallow junctions.
Inventors
- 👤 Derryl D. J. Allman
- 👤 Gayle W. Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:46
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/01; H10D1/045; H10D1/047; H10D30/00; H10D30/01; H10D30/012; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; Y; Y10; Y10S; Y10S148/00; Y10S148/031
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
105 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall; depositing a layer of SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall; and driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
Claim 2
Independent Claim
105 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall; depositing a layer of SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall; and driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
Claim 3
Dependent Claim
22 words
The method as recited in claim 1, further comprising the step of: densifying the doped SOG layer before the step of driving.
Claim 4
Dependent Claim
25 words
The method as recited in claim 1, further comprising the step of: densifying the insulating layer before the step of depositing the layer of SOG.
Claim 5
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant comprises boron.
Claim 6
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant comprises phosphorus.
Claim 7
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant comprises arsenic.
Claim 8
Dependent Claim
12 words
The method as recited in claim 1, wherein the dopant comprises antimony.
Claim 9
Dependent Claim
15 words
The method as recited in claim 1, wherein the insulating layer comprises undoped silicon oxide.
Claim 10
Dependent Claim
47 words
The method as recited in claim 1, wherein the step of driving comprises the substep of: heating the SOG layer in a furnace to a temperature within the range of about 1000 degrees Celsius to about 1150 degrees Celsius for about 30 minutes to about 3 hours.
Claim 11
Dependent Claim
47 words
The method as recited in claim 1, wherein the step of driving comprises the substep of: heating the SOG layer to a temperature within the range of about 1000 degrees Celsius to about 1150 degrees Celsius for about 20 to about 9000 seconds in an RTP cycle.
Claim 12
Dependent Claim
26 words
The method as recited in claim 1, wherein the step of depositing a layer of SOG comprises the substep of: removing SOG from the raised portion.
Claim 13
Dependent Claim
16 words
The method as recited in claim 1, wherein the insulating layer comprises: an undoped SOG layer.
Claim 14
Dependent Claim
26 words
The method as recited in claim 12, further comprising the step of: densifying the undoped SOG layer before the step of depositing the doped SOG layer.
Claim 15
Independent Claim
115 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall; densifying the insulating layer; depositing a layer of doped SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall; densifying the doped SOG layer; and driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
Claim 16
Independent Claim
115 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing an insulating layer only on the substrate adjacent the sidewall, the insulating layer having an end adjacent the sidewall; densifying the insulating layer; depositing a layer of doped SOG containing a dopant only on the insulating layer adjacent the sidewall, the doped SOG layer having an end adjacent the sidewall; densifying the doped SOG layer; and driving the dopant from the SOG layer only into the sidewall to form a junction area at the ends of the insulating layer and the SOG layer, the junction area having a depth less than the length of the sidewall.
Claim 17
Independent Claim
63 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing a first doped SOG layer on the substrate; depositing a second doped SOG layer on the first SOG layer adjacent the sidewall; densifying the first and second doped SOG layers; and driving the dopants from the first and second SOG layers into the sidewall.
Claim 18
Independent Claim
63 words
A method for doping a sidewall of a raised portion of a semiconductor substrate comprising the steps of: depositing a first doped SOG layer on the substrate; depositing a second doped SOG layer on the first SOG layer adjacent the sidewall; densifying the first and second doped SOG layers; and driving the dopants from the first and second SOG layers into the sidewall.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |