US4782036A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for producing a predetermined doping in side walls and bases of trenches etched into semiconductor substrates
Assignee: Siemens AG
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Filing: 1987-07-16
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Granted: 1988-11-01
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Expires: 2007-07-16
Abstract
Abstract A process for producing a predetermined doping level in side walls and bases of trenches which have been etched into semiconductor substrates which involves treating the substrate with a gaseous atmosphere containing organic compounds of silicon, oxygen and boron in amounts sufficient to form a boron silicate glass, thermally decomposing the organic compounds to form the boron silicate glass as a layer deposit along the side walls and the bases and thereafter diffusing the layer deposit into the side walls and the base. This is followed by removing the layer deposit remaining after the predetermined amount of diffusion has taken place.
Inventors
- 👤 Frank Becker
- 👤 Erwin Hopf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:05
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
111 words
A process for producing a predetermined doping level in the side walls and base of a trench etched into a semiconductor substrate which comprises: treating said substrate with a gaseous atmosphere containing tetraethylorthosilicate and trimethylborate in amounts sufficient to form a boron silicate glass, thermally decomposing said organic compounds at a temperature in the range from 600° to 700° C. and a pressure of 0.1 to 2 mbar to form said boron silicate glass as a layer deposit along said side walls and said bottom, diffusing said layer dopant into said side walls and said bottom, and removing the layer deposit remaining after the predetermined amount of diffusion has taken place.
Claim 2
Dependent Claim
111 words
A process for producing a predetermined doping level in the side walls and base of a trench etched into a semiconductor substrate which comprises: treating said substrate with a gaseous atmosphere containing tetraethylorthosilicate and trimethylborate in amounts sufficient to form a boron silicate glass, thermally decomposing said organic compounds at a temperature in the range from 600° to 700° C. and a pressure of 0.1 to 2 mbar to form said boron silicate glass as a layer deposit along said side walls and said bottom, diffusing said layer dopant into said side walls and said bottom, and removing the layer deposit remaining after the predetermined amount of diffusion has taken place.
Claim 3
Dependent Claim
19 words
A process according to claim 1 wherein the diffusing takes place at temperatures of from 900° to 1050° C.
Claim 4
Dependent Claim
21 words
A process according to claim 2 wherein the diffusing takes place for a time of from 20 minutes to 2 hours.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1991-11-01 | 1992-05-02 | 1992-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-11-01 | 1996-05-02 | 1996-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-11-01 | 2000-05-02 | 2000-11-01 | $7700.00 | Window Closed / Lapsed |