Patent US4689793A successfully refreshed from Google Patents.
US3247032A
Expired / Lapsed
US
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Method for controlling diffusion of an active impurity material into a semiconductor body
Assignee: Continental Device Corp
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Filing: 1962-06-20
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Granted: 1966-04-19
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Expires: 1982-06-20
Abstract
No abstract record available.
Inventors
- 👤 Thomas W Griswold
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 15:21
CPC Classifications
H; H10; H10P; H10P95/00; C; C23; C23C; C23C8/00; H10P32/00; H10P32/10; H10P32/14; H10P32/1404; H10P32/17; H10P32/171; H10W; H10W74/00; H10W74/40; H10W74/43
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
126 words
THE METHOD OF CONTROLLING THE SOURCE OF ACTIVE IMPURITY MATERIAL AVAILABLE FOR DIFFUSION INTO A SEMICONDUCTOR BODY COMPRISING: DEPOSITING FROM A DECOMPOSABLE ORGANIC COMPOUND SOURCE THEREOF A LAYER OF ACTIVE IMPURITY MATERIAL UPON AT LEAST A PORTION OF THE SURFACE OF SAID SEMICONDUCTOR BODY HEATED TO A FIRST TEMPERATURE AT WHICH THE BOND OF SAID COMPOUND DECOMPOSE BUT BELOW THAT TEMPERATURE AT WHICH SIGNIFICANT DIFFUSION OCCURS; DEPOSITING FROM A DECOMPOSABLE SOURCE THEREOF A LAYER OF OXIDE OF SEMICONDUCTOR MATERIAL UPON AT LEAST SAID LAYER OF ACTIVE IMPURITY MATERIAL, SAID BODY BEING HEATED TO A HIGHER SECOND TEMPERATURE AT WHICH THE BOND OF SAID OXIDE COMPOUND DECOMPOSES; AND HEATING SAID SEMICONDUCTOR BODY TO A THIRD TEMPERATURE SUFFICIENT FOR DIFFUSING SAID ACTIVE IMPURITY MATERIAL INTO SAID SEMICONDUCTOR BODY.
Claim 2
Independent Claim
126 words
THE METHOD OF CONTROLLING THE SOURCE OF ACTIVE IMPURITY MATERIAL AVAILABLE FOR DIFFUSION INTO A SEMICONDUCTOR BODY COMPRISING: DEPOSITING FROM A DECOMPOSABLE ORGANIC COMPOUND SOURCE THEREOF A LAYER OF ACTIVE IMPURITY MATERIAL UPON AT LEAST A PORTION OF THE SURFACE OF SAID SEMICONDUCTOR BODY HEATED TO A FIRST TEMPERATURE AT WHICH THE BOND OF SAID COMPOUND DECOMPOSE BUT BELOW THAT TEMPERATURE AT WHICH SIGNIFICANT DIFFUSION OCCURS; DEPOSITING FROM A DECOMPOSABLE SOURCE THEREOF A LAYER OF OXIDE OF SEMICONDUCTOR MATERIAL UPON AT LEAST SAID LAYER OF ACTIVE IMPURITY MATERIAL, SAID BODY BEING HEATED TO A HIGHER SECOND TEMPERATURE AT WHICH THE BOND OF SAID OXIDE COMPOUND DECOMPOSES; AND HEATING SAID SEMICONDUCTOR BODY TO A THIRD TEMPERATURE SUFFICIENT FOR DIFFUSING SAID ACTIVE IMPURITY MATERIAL INTO SAID SEMICONDUCTOR BODY.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-04-18 | 1969-10-18 | 1970-04-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-04-18 | 1973-10-18 | 1974-04-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-04-18 | 1977-10-18 | 1978-04-19 | $7700.00 | Window Closed / Lapsed |