US3066052A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor-solid diffusion of semiconductive material
Assignee: AT&T Inc
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Filing: 1958-06-09
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Granted: 1962-11-27
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Expires: 1978-06-09
Abstract
No abstract record available.
Inventors
- 👤 Brian T Howard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 18:02
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B29/00; C30B29/02; C30B29/06; C30B31/02; C30B31/08; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/92
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
97 words
THE PROCESS OF DIFFUSION OF PHOSPHORUS ATOMS INTO AT LEASTT ONE SURFACE OF A SILICON WHICH COMPRISES THE STEPS OF PREDIFFUSING PHOSPHORUS INTO SAID SURFACE AT A TEMPERATURE WHICH CAUSES THE PHOSPHORUS IMPURITIES TO DIFFUSE INTO THE SLICE, ETCHING SAID PREDIFFUSED SURFACE TO REMOVE ALL LOOSE PHOSPHORUS AND PHOSPHORUS GLASS LEAVING THE IMPURITIES DIFFUSED INTO THE SLICE, AND SUBSEQUENTLY SUBJECTING THE SLICE TO A TEMPERATURE IN THE RANGE OF 700-1350*C. IN THE ABSENCE OF FURTHER IMPURITIES WHEREBY THE DIFFUSED PHOSPHORUS LAYER DIFFUSES FURTHER INTO THE MATERIAL TO FORM A DIFFUSION LAYER OF DESIRED DEPTH AND IMPURITY CONCENTRATION.
References Cited (Backward Citations)
US2802760A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1965-11-26 | 1966-05-28 | 1966-11-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1969-11-26 | 1970-05-28 | 1970-11-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1973-11-26 | 1974-05-28 | 1974-11-27 | $7700.00 | Window Closed / Lapsed |