US4755486A
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Method of producing a defined arsenic doping in silicon semiconductor substrates
Assignee: Siemens AG
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Filing: 1987-10-15
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Granted: 1988-07-05
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Expires: 2007-10-15
Abstract
Abstract A method of producing a defined arsenic doping in silicon semiconductor substrates is provided. Preferably, the arsenic doping is produced in the sidewalls and floors of trenches having high aspect ratio which are etched into the substrates. An arseno-silicate glass layer is deposited into these trenches to be used as a diffusion source, the glass layer being removed after the diffusion. The arseno-silicate glass layer is deposited by thermal decomposition from the vapor phase of tetraethylortho silicate Si)OC 2 H 5 ) 4 and triethylarsenate AsO(OC 2 H 5 ) 3 . A steep and reproducible doping profile having constant, maximum penetration depth and high arsenic concentration in the substrate surface which is needed for VLSI semiconductor circuits is obtained through the process of the present invention.
Inventors
- 👤 Helmuth Treichel
- 👤 Frank S. Becker
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 04:50
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; H10P14/6681; H10P14/6684; H10P14/6686; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/141; H10P32/17; H10P32/171; H10P14/6923
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
81 words
A method of producing a defined arsenic doping in the sidewalls and floors of trenches etched in semiconductor substrates, wherein an arseno-silicate glass layer is deposited into these trenches and used as a diffusion source, the glass layer being removed after the diffusion, comprising the step of depositing the arseno-silicate glass layer in the trench by thermal decomposition from the vapor phase of tetraethylortho silicate (Si(OC 2 H 5 ) 4 ) and triethylarsenate (AsO(OC 2 H 5 ) 3 ).
Claim 2
Independent Claim
81 words
A method of producing a defined arsenic doping in the sidewalls and floors of trenches etched in semiconductor substrates, wherein an arseno-silicate glass layer is deposited into these trenches and used as a diffusion source, the glass layer being removed after the diffusion, comprising the step of depositing the arseno-silicate glass layer in the trench by thermal decomposition from the vapor phase of tetraethylortho silicate (Si(OC 2 H 5 ) 4 ) and triethylarsenate (AsO(OC 2 H 5 ) 3 ).
Claim 3
Dependent Claim
19 words
The method of claim 1 wherein the arseno-silicate glass layer is deposited at approximately 650° to about 750° C.
Claim 4
Dependent Claim
23 words
The method of claim 1 wherein the pressure at which the arseno-silicate glass layer is deposited is approximately 0.5 to about 1.1 mbar.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein oxygen is added to decomposing gases.
Claim 6
Dependent Claim
23 words
The method of claim 2 wherein the pressure at which the arseno-silicate glass layer is deposited is approximately 0.5 to about 1.1 mbar.
Claim 7
Dependent Claim
12 words
The method of claim 3 wherein oxygen is added to decomposing gases.
Claim 8
Dependent Claim
12 words
The method of claim 5 wherein oxygen is added to decomposing gases.
Claim 9
Independent Claim
78 words
A method of producing a defined arsenic doping in semiconductor substrates having trenches etched therein comprising the steps of: depositing an arseno-silicate glass layer by thermal decomposition from the vapor phase of tetraethylortho silicate (Si(OC 2 H 5 ) 4 ) and triethylarsenate (AsO(OC 2 H 5 ) 3 ) at temperatures of approximately 650° to about 750° C. into the trenches to be used as a diffusion source; and removing the arseno-silicate glass layer after the diffusion.
Claim 10
Independent Claim
78 words
A method of producing a defined arsenic doping in semiconductor substrates having trenches etched therein comprising the steps of: depositing an arseno-silicate glass layer by thermal decomposition from the vapor phase of tetraethylortho silicate (Si(OC 2 H 5 ) 4 ) and triethylarsenate (AsO(OC 2 H 5 ) 3 ) at temperatures of approximately 650° to about 750° C. into the trenches to be used as a diffusion source; and removing the arseno-silicate glass layer after the diffusion.
Claim 11
Dependent Claim
12 words
The method of claim 8 wherein oxygen is added to decomposing gases.
Claim 12
Dependent Claim
20 words
The method of claim 8 wherein the arseno-silicate glass layer is deposited on the substrate in a horizontal LPCVD system.
Claim 13
Dependent Claim
27 words
The method of claim 8 wherein the arseno-silicate glass layer is deposited at a mean temperature of approximately 710° C. and a pressure of approximately 920 mbar.
References Cited (Backward Citations)
US4693781A
Cited
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| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1991-07-05 | 1992-01-04 | 1992-07-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1995-07-05 | 1996-01-04 | 1996-07-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1999-07-05 | 2000-01-04 | 2000-07-05 | $7700.00 | Window Closed / Lapsed |