Patent US341279A successfully refreshed from Google Patents.
Patent US7410918B2 successfully refreshed from Google Patents.
US7410918B2
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Systems and methods for forming metal oxides using alcohols
Assignee: Micron Technology Inc
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Filing: 2006-03-14
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Granted: 2008-08-12
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Expires: 2026-03-14
Abstract
Abstract A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds.
Inventors
- 👤 Brian A. Vaartstra
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; C23C16/403; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; F; F17; F17C; F17C11/00; H10P14/66; H10P14/668; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69392; H10P14/69394; H10P14/69396; H10P14/69397
Claims Analysis
Total Claims: 28
Claim 1
Independent Claim
194 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) Z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 2
Independent Claim
194 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) Z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; and contacting the precursor compounds to form a metal oxide layer on one or more surfaces of the semiconductor substrate or substrate assembly using a vapor deposition process, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 3
Dependent Claim
16 words
The method of claim 1 wherein the semiconductor substrate or substrate assembly is a silicon wafer.
Claim 4
Dependent Claim
14 words
The method of claim 1 wherein the metal oxide layer is a dielectric layer.
Claim 5
Dependent Claim
22 words
The method of claim 3 wherein the two or more different metals are in the form of alloys, solid solutions, or nanolaminates.
Claim 6
Dependent Claim
33 words
The method of claim 1 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.
Claim 7
Dependent Claim
35 words
The method of claim 5 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Y, La, Pr, Nd, Gd, Ti, Zr, Hf, Nb, Ta, Al, and Si.
Claim 8
Dependent Claim
21 words
The method of claim 1 wherein the metal oxide layer has a thickness of about 30 Å to about 80 Å.
Claim 9
Dependent Claim
14 words
The method of claim 1 wherein each R is independently a (C1-C10) organic group.
Claim 10
Dependent Claim
27 words
The method of claim 1 wherein R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or a (C1-C6) organic group.
Claim 11
Dependent Claim
17 words
The method of claim 1 wherein w is 0 to 2 and z is 2 to 6.
Claim 12
Dependent Claim
11 words
The method of claim 1 wherein q is 2 to 3.
Claim 13
Independent Claim
208 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semi conductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 14
Independent Claim
208 words
A method of manufacturing a semiconductor structure, the method comprising: providing a semiconductor substrate or substrate assembly within a deposition chamber; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; and directing the vaporized precursor compounds to the semi conductor substrate or substrate assembly to form a metal oxide dielectric layer on one or more surfaces of the semiconductor substrate or substrate assembly, wherein the metal oxide layer comprises two or more different metals, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 15
Dependent Claim
33 words
The method of claim 12 wherein M 1 and M 2 are each independently selected from the group of metals consisting of Groups 3, 4, 5, 6, 7, 13, 14, and the lanthanides.
Claim 16
Dependent Claim
20 words
The method of claim 12 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 17
Dependent Claim
23 words
The method of claim 14 wherein the temperature of the semiconductor substrate or substrate assembly is about 100° C. to about 600° C.
Claim 18
Dependent Claim
28 words
The method of claim 14 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 0.1 torr to about 10 torr.
Claim 19
Dependent Claim
26 words
The method of claim 14 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 20
Dependent Claim
27 words
The method of claim 17 wherein during the atomic layer deposition process the metal-containing layer is formed by alternately introducing the precursor compounds during each deposition cycle.
Claim 21
Dependent Claim
23 words
The method of claim 17 wherein the temperature of the semiconductor substrate or substrate assembly is about 25° C. to about 400° C.
Claim 22
Dependent Claim
29 words
The method of claim 17 wherein the semiconductor substrate or substrate assembly is in a deposition chamber having a pressure of about 10 −4 torr to about 1 torr.
Claim 23
Independent Claim
204 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate, wherein the metal oxide dielectric layer two or more different metals; and forming a second electrode on the dielectric layer, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 24
Independent Claim
204 words
A method of manufacturing a memory device structure, the method comprising: providing a substrate having a first electrode thereon; providing at least one alcohol of the formula R(OH) r wherein R is an organic group and r is 1 to 3; providing at least one metal-containing precursor compound of the formula M 1 (NR 1 ) w (NR 2 R 3 ) z (Formula I), M 2 R 4 q (Formula II), or Lewis Base adducts of Formula II, wherein: M 1 and M 2 are each independently a metal; R 1 , R 2 , R 3 , and R 4 are each independently hydrogen or an organic group; w is 0 to 4; z is 1 to 8; q is 1 to 5; and w, z, and q are dependent on the oxidation states of the metals; vaporizing the precursor compounds to form vaporized precursor compounds; directing the vaporized precursor compounds to the substrate to form a metal oxide dielectric layer on the first electrode of the substrate, wherein the metal oxide dielectric layer two or more different metals; and forming a second electrode on the dielectric layer, wherein the precursor compounds are vaporized in the presence of an inert carrier gas.
Claim 25
Dependent Claim
20 words
The method of claim 21 wherein vaporizing and directing the precursor compounds is accomplished using a chemical vapor deposition process.
Claim 26
Dependent Claim
26 words
The method of claim 21 wherein vaporizing and directing the precursor compounds is accomplished using an atomic layer deposition process comprising a plurality of deposition cycles.
Claim 27
Dependent Claim
22 words
The method of claim 21 wherein the two or more different metals are in the form of alloys, solid solutions, or nanolaminates.
Claim 28
Dependent Claim
41 words
The method of claim 21 wherein the metal oxide dielectric layer comprises two or more of ZrO 2 , HfO 2 , Ta 2 O 3 , Al 2 O 2 , TiO 2 , and an oxide of a lanthanide.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2011-08-12 | 2012-02-11 | 2012-08-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2015-08-12 | 2016-02-11 | 2016-08-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2019-08-12 | 2020-02-11 | 2020-08-12 | $7700.00 | Window Closed / Lapsed |