US6784508B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof
Assignee: Microsoft Technology Licensing LLC
•
Filing: 2001-03-09
•
Granted: 2004-08-31
•
Expires: 2021-03-09
Abstract
Abstract Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a laminated structure of an amorphous metal oxide film and metal silicate film, or a gate insulating film structure having a first gate insulating film including an oxide film of a first metal element and a second gate insulating film including a metal silicate film of a second metal element.
Inventors
- 👤 Yoshitaka Tsunashima
- 👤 Seiji Inumiya
- 👤 Yasumasa Suizu
- 👤 Yoshio Ozawa
- 👤 Kiyotaka Miyano
- 👤 Masayuki Tanaka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0135; H10D84/014; H10P; H10P10/00; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01342; H10D64/01344; H10D64/01346; H10D64/017; H10D64/021; H10D64/60; H10D64/66; H10D64/667; H10D64/68; H10D64/681; H10D64/685; H10D64/691; H10D64/693; H10D84/0144; H10D84/0149; H10D84/02; H10D84/03; H10D84/038; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/662; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/6934; H10P14/6938; H10P14/6939; H10P14/69395
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
88 words
A semiconductor device comprising: a semiconductor substrate; a gate insulating film provided on said semiconductor substrate, at least part of said gate insulating film including a metal oxide film; and wherein an insulating film containing metal, silicon and oxygen is formed between said semiconductor substrate and said metal oxide film, said insulating film containing fluorine or fluorine and nitrogen and a main metal element constituting said metal oxide film and a main metal element constituting said insulating film containing metal, silicon and oxygen are different from each other.
Claim 2
Dependent Claim
88 words
A semiconductor device comprising: a semiconductor substrate; a gate insulating film provided on said semiconductor substrate, at least part of said gate insulating film including a metal oxide film; and wherein an insulating film containing metal, silicon and oxygen is formed between said semiconductor substrate and said metal oxide film, said insulating film containing fluorine or fluorine and nitrogen and a main metal element constituting said metal oxide film and a main metal element constituting said insulating film containing metal, silicon and oxygen are different from each other.
Claim 3
Dependent Claim
16 words
A semiconductor device according to claim 1 , wherein the semiconductor substrate is made of silicon.
Claim 4
Dependent Claim
19 words
A semiconductor device according to claim 1 , wherein at least the metal oxide film is an amorphous film.
Claim 5
Dependent Claim
53 words
A semiconductor device according to claim 3 , further comprising a flat insulating film having a gate opening portion in which the amorphous metal oxide film and the gate insulating film containing metal, silicon and oxygen are formed, and a gate electrode formed on the gate insulating film in the gate opening portion.
Claim 6
Dependent Claim
141 words
A semiconductor device comprising: a semiconductor substrate, and first and second transistor regions formed on said semiconductor substrate, each of said first and second transistor regions having a gate insulating film at least a part of said gate insulating film including a metal oxide film; wherein an insulating film containing metal, silicon and oxygen is formed between said semiconductor substrate and said metal oxide film, said insulating film provided in one of the first and second transistor regions contains fluorine or fluorine and nitrogen; and wherein a metal element constituting said insulating film containing metal, silicon and oxygen in one of said first and second regions is different from that of the metal oxide film and the composition rations of the metal elements, silicon and oxygen of said insulating films in said first and second regions are different from each other.
Claim 7
Dependent Claim
141 words
A semiconductor device comprising: a semiconductor substrate, and first and second transistor regions formed on said semiconductor substrate, each of said first and second transistor regions having a gate insulating film at least a part of said gate insulating film including a metal oxide film; wherein an insulating film containing metal, silicon and oxygen is formed between said semiconductor substrate and said metal oxide film, said insulating film provided in one of the first and second transistor regions contains fluorine or fluorine and nitrogen; and wherein a metal element constituting said insulating film containing metal, silicon and oxygen in one of said first and second regions is different from that of the metal oxide film and the composition rations of the metal elements, silicon and oxygen of said insulating films in said first and second regions are different from each other.
Claim 8
Dependent Claim
166 words
A semiconductor device comprising: a semiconductor substrate; a first transistor region on said semiconductor substrate, in which a first metal oxide film is provided as at least part of a first gate insulating film and a first insulating film containing metal, silicon and oxygen is provided between the semiconductor substrate and the first metal oxide film; and a second transistor region on said semiconductor substrate, in which a second metal oxide film is provided as at least part of a second gate insulating film and a second insulating film containing metal, silicon and oxygen is provided between the semiconductor substrate and the second metal oxide film, and a part of at least one of said first and second gate insulating films adjacent to the semiconductor substrate contains fluorine or fluorine and nitrogen; wherein a metal element constituting the first or second metal oxide film in said first or second transistor region and that in the corresponding first or second insulating film are different from each other.
Claim 9
Dependent Claim
166 words
A semiconductor device comprising: a semiconductor substrate; a first transistor region on said semiconductor substrate, in which a first metal oxide film is provided as at least part of a first gate insulating film and a first insulating film containing metal, silicon and oxygen is provided between the semiconductor substrate and the first metal oxide film; and a second transistor region on said semiconductor substrate, in which a second metal oxide film is provided as at least part of a second gate insulating film and a second insulating film containing metal, silicon and oxygen is provided between the semiconductor substrate and the second metal oxide film, and a part of at least one of said first and second gate insulating films adjacent to the semiconductor substrate contains fluorine or fluorine and nitrogen; wherein a metal element constituting the first or second metal oxide film in said first or second transistor region and that in the corresponding first or second insulating film are different from each other.
Claim 10
Dependent Claim
16 words
A semiconductor device according to claim 6 , wherein the semiconductor substrate is made of silicon.
References Cited (Backward Citations)
JPH0374878A
Cited
US5712208A
Cited
US5571734A
Cited
US5876788A
Cited
US6130164A
Cited
JPH11135774A
Cited
US6020243A
Cited
US6261887B1
Cited
US5834353A
Cited
US5963810A
Cited
US6057584A
Cited
US6274905B1
Cited
US6319730B1
Cited
US6417546B2
Cited
US6407435B1
Cited
US6713846B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-08-31 | 2008-03-01 | 2008-08-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-08-31 | 2012-03-01 | 2012-08-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-08-31 | 2016-03-01 | 2016-08-31 | $7700.00 | Window Closed / Lapsed |