US6417546B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
P-type FET in a CMOS with nitrogen atoms in the gate dielectric
Assignee: Micron Technology Inc
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Filing: 1999-11-19
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Granted: 2002-07-09
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Expires: 2019-11-19
Abstract
Abstract In accordance with an aspect of the invention, a semiconductor processing method of forming field effect transistors includes forming a first gate dielectric layer over a first area configured for forming p-type field effect transistors and a second area configured for forming n-type field effect transistors, both areas on a semiconductor substrate. The first gate dielectric layer is silicon dioxide having a nitrogen concentration of 0.1% molar to 10.0% molar within the first gate dielectric layer, the nitrogen atoms being higher in concentration within the first gate dielectric layer at one elevational location as compared to another elevational location. The first gate dielectric layer is removed from over the second area while leaving the first gate dielectric layer over the first area, and a second gate dielectric layer is formed over the second area. The second gate dielectric layer is a silicon dioxide material substantially void of nitrogen atoms. Transistor gates are formed over the first and second gate dielectric layers, and then p-type source/drain regions are formed proximate the transistor gates in the first area and n-type source/drain regions are formed proximate the transistor gates in the second area.
Inventors
- 👤 Jigish D. Trivedi
- 👤 Zhongze Wang
- 👤 Rongsheng Yang
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:13
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
116 words
Integrated circuitry comprising a semiconductor substrate having an area within which a plurality of n-type and p-type field effect transistors are formed, the respective transistors comprising a gate, a gate dielectric layer, a semiconductive channel region and source/drain regions, the gate dielectric layer of the p-type field effect transistors comprising an oxide having nitrogen atoms therein, and the nitrogen atoms being higher in concentration within the gate dielectric layer at only one elevational location spaced from the semiconductive channel region as compared to another elevational location elevationally below the one location, the gate dielectric layer of the n-type field effect transistors being different in composition from the gate dielectric layer of the p-type field effect transistors.
Claim 2
Dependent Claim
116 words
Integrated circuitry comprising a semiconductor substrate having an area within which a plurality of n-type and p-type field effect transistors are formed, the respective transistors comprising a gate, a gate dielectric layer, a semiconductive channel region and source/drain regions, the gate dielectric layer of the p-type field effect transistors comprising an oxide having nitrogen atoms therein, and the nitrogen atoms being higher in concentration within the gate dielectric layer at only one elevational location spaced from the semiconductive channel region as compared to another elevational location elevationally below the one location, the gate dielectric layer of the n-type field effect transistors being different in composition from the gate dielectric layer of the p-type field effect transistors.
Claim 3
Dependent Claim
18 words
The integrated circuitry of claim 1 wherein the gate dielectric layer of the p-type transistors comprises silicon dioxide.
Claim 4
Dependent Claim
29 words
The integrated circuitry of claim 1 wherein the gate dielectric layer of the p-type transistors are of a different thickness relative the gate dielectric layer of the n-type transistors.
Claim 5
Dependent Claim
33 words
The integrated circuitry of claim 1 wherein the concentration of nitrogen atoms in the gate dielectric layer of the p-type transistors at the one elevational location is from 0.1% molar to 10.0% molar.
Claim 6
Dependent Claim
25 words
The integrated circuitry of claim 1 wherein the one elevational location is located proximate an interface of the gate dielectric layer with the semiconductor substrate.
Claim 7
Dependent Claim
141 words
Integrated circuitry comprising a semiconductor substrate having an area within which a plurality of n-type and p-type field effect transistors are formed, the respective transistors comprising a gate, a gate dielectric layer, a semiconductive channel region and source/drain regions, the gate dielectric layer of the p-type field effect transistors comprising silicon dioxide having nitrogen atoms therein, the nitrogen atoms being higher in concentration within the gate dielectric layer at only one elevational location spaced from the semiconductive channel region as compared to another elevational location elevationally below the one location, and the nitrogen atoms comprising a concentration of from 0.1% molar to 10.0% molar at the one location, the gate dielectric layer of the n-type field effect transistors comprising silicon dioxide material proximate an interface of the gate dielectric layer with the semiconductor substrate which is substantially void of nitrogen atoms.
Claim 8
Dependent Claim
141 words
Integrated circuitry comprising a semiconductor substrate having an area within which a plurality of n-type and p-type field effect transistors are formed, the respective transistors comprising a gate, a gate dielectric layer, a semiconductive channel region and source/drain regions, the gate dielectric layer of the p-type field effect transistors comprising silicon dioxide having nitrogen atoms therein, the nitrogen atoms being higher in concentration within the gate dielectric layer at only one elevational location spaced from the semiconductive channel region as compared to another elevational location elevationally below the one location, and the nitrogen atoms comprising a concentration of from 0.1% molar to 10.0% molar at the one location, the gate dielectric layer of the n-type field effect transistors comprising silicon dioxide material proximate an interface of the gate dielectric layer with the semiconductor substrate which is substantially void of nitrogen atoms.
Claim 9
Dependent Claim
25 words
The integrated circuitry of claim 6 wherein the one elevational location is located proximate an interface of the gate dielectric layer with the semiconductor substrate.
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