US6136654A
Expired / Lapsed
US
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Method of forming thin silicon nitride or silicon oxynitride gate dielectrics
Assignee: Texas Instruments Inc
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Filing: 1997-12-04
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Granted: 2000-10-24
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Expires: 2017-12-04
Abstract
Abstract An embodiment of the instant invention is a method of forming a dielectric layer, the method comprising the steps of: providing a semiconductor substrate (substrate 12), the substrate having a surface; forming an oxygen-containing layer (layer 14) on the semiconductor substrate; and subjecting the oxygen-containing layer to a nitrogen containing plasma (plasma 16) so that the nitrogen is either incorporated into the oxygen-containing layer (see regions 18, 19, and 20) or forms a nitride layer at the surface of the substrate (region 22). Using this embodiment of the instant invention, the dielectric layer can be substantially free of hydrogen. Preferably, the oxygen-containing layer is an SiO 2 layer or it is comprised of oxygen and nitrogen (preferably an oxynitride layer). The plasma is, preferably, a high-density plasma. Preferably, a source of nitrogen is introduced to the plasma to form the nitrogen containing plasma. The source of nitrogen is preferably comprised of a material consisting of: N 2 , NH 3 , NO, N 2 O, or a mixture thereof.
Inventors
- 👤 Robert Kraft
- 👤 Sunil Hattangady
- 👤 Douglas T. Grider
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:40
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0144; H10D84/02; H10D84/03; H10D84/038; H10D64/681; H10D64/685
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
77 words
A method of forming an integrated circuit structure, said method comprising the steps of: providing a substrate, said substrate having a semiconducting surface; forming an oxygen-containing layer on said semiconducting surface; and subjecting said oxygen-containing layer to a nitrogen containing plasma of an ion density of at least about 10 10 cm -3 , to form a dielectric layer having at least a portion in which the concentration of nitrogen is higher than the concentration of oxygen.
Claim 2
Independent Claim
77 words
A method of forming an integrated circuit structure, said method comprising the steps of: providing a substrate, said substrate having a semiconducting surface; forming an oxygen-containing layer on said semiconducting surface; and subjecting said oxygen-containing layer to a nitrogen containing plasma of an ion density of at least about 10 10 cm -3 , to form a dielectric layer having at least a portion in which the concentration of nitrogen is higher than the concentration of oxygen.
Claim 3
Dependent Claim
14 words
The method of claim 1, wherein said dielectric layer is substantially free of hydrogen.
Claim 4
Dependent Claim
14 words
The method of claim 1, wherein said oxygen-containing layer is an SiO 2 layer.
Claim 5
Dependent Claim
15 words
The method of claim 1, wherein said oxygen-containing layer is comprised of oxygen and nitrogen.
Claim 6
Dependent Claim
13 words
The method of claim 1, wherein said oxygen-containing layer is an oxynitride layer.
Claim 7
Dependent Claim
21 words
The method of claim 1, wherein a source of nitrogen is introduced to said plasma to form said nitrogen containing plasma.
Claim 8
Dependent Claim
33 words
The method of claim 6, wherein said source of nitrogen comprises a material selected from the group consisting of: N 2 , NH 3 , NO, N 2 O, and a mixture thereof.
Claim 9
Dependent Claim
46 words
The method of claim 1, wherein the integrated circuit structure includes a transistor having a conductive gate structure disposed on a gate dielectric layer; wherein said dielectric layer forms said gate dielectric layer; and further comprising: forming the conductive gate structure upon said gate dielectric layer.
Claim 10
Dependent Claim
15 words
The method of claim 8, wherein said conductive gate structure is comprised of doped polysilicon.
Claim 11
Dependent Claim
14 words
The method of claim 8, wherein said conductive gate structure is comprised of metal.
Claim 12
Dependent Claim
15 words
The method of claim 8, wherein said gate dielectric layer is substantially free of hydrogen.
Claim 13
Dependent Claim
14 words
The method of claim 11, wherein said dielectric layer is an SiO 2 layer.
Claim 14
Dependent Claim
13 words
The method of claim 8, wherein said dielectric layer is an oxynitride layer.
Claim 15
Dependent Claim
55 words
The method of claim 1, wherein the integrated circuit structure includes a capacitor having a capacitor dielectric; and further comprising the steps of: forming a first electrode over said substrate, said semiconducting surface present at said first electrode; and forming a second electrode on said dielectric layer; wherein said dielectric layer forms said capacitor dielectric.
Claim 16
Dependent Claim
27 words
The method of claim 1, wherein the ion density of the nitrogen containing plasma is between about 10 10 cm -3 and about 12 cm -3 .
Claim 17
Dependent Claim
24 words
The method of claim 1, wherein the subjecting step is performed at a process pressure ranging from about 1 mtorr to about 50 mtorr.
Claim 18
Independent Claim
63 words
A method of fabricating an integrated circuit structure at a semiconducting surface of a substrate, comprising the steps of: forming a dielectric layer comprising an oxide over a location of the semiconducting surface; and exposing the dielectric layer to a nitrogen containing plasma while biasing the substrate, to react nitrogen from the plasma with the semiconducting surface to form a nitride layer thereat.
Claim 19
Independent Claim
63 words
A method of fabricating an integrated circuit structure at a semiconducting surface of a substrate, comprising the steps of: forming a dielectric layer comprising an oxide over a location of the semiconducting surface; and exposing the dielectric layer to a nitrogen containing plasma while biasing the substrate, to react nitrogen from the plasma with the semiconducting surface to form a nitride layer thereat.
Claim 20
Dependent Claim
16 words
The method of claim 17, wherein the dielectric layer is substantially removed during the exposing step.
Claim 21
Dependent Claim
22 words
The method of claim 17, wherein the nitrogen containing plasma has an ion density of at least 10 10 cm -3 .
Claim 22
Dependent Claim
42 words
The method of claim 17, wherein the integrated circuit structure includes a transistor; wherein the nitride layer becomes at least part of a gate dielectric layer of the transistor; and further comprising: forming a conductive gate structure upon said gate dielectric layer.
Claim 23
Dependent Claim
61 words
The method of claim 17, wherein the integrated circuit structure includes a capacitor; and further comprising the steps of: before the step of forming a dielectric layer, forming a first electrode over said substrate, said semiconducting surface present at said first electrode; and after the exposing step, forming a second electrode upon a capacitor dielectric layer that includes the nitride layer.
References Cited (Backward Citations)
US3788894A
Cited
US4788082A
Cited
JPS60241269A
Cited
US4900396A
Cited
US5356672A
Cited
US5500380A
Cited
US5464792A
Cited
US5453908A
Cited
US5635741A
Cited
US5731220A
Cited
EP0824268A2
Cited
US6040249A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-24 | 2004-04-24 | 2004-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-24 | 2008-04-24 | 2008-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-24 | 2012-04-24 | 2012-10-24 | $7700.00 | Window Closed / Lapsed |