US5500380A
Expired / Lapsed
US
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Method for fabricating thin film transistor
Assignee: LG Electronics Inc
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Filing: 1994-04-14
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Granted: 1996-03-19
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Expires: 2014-04-14
Abstract
Abstract The present invention relates to a method for fabricating an amorphous-silicon thin film transistor, which comprises the steps of forming a gate electrode having sloped edges on a substrate, depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed, performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the gate insulation film and thus to form the gate insulation film completely, depositing an amorphous silicon film on the gate insulation film to form an active layer, depositing a n+ type amorphous silicon film over the entire exposed surface of the resulting structure to form an ohmic layer, etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer, forming a source region and a drain region respectively only on portions of the n+ type amorphous silicon film corresponding to both edges of the gate electrode to expose the n+ type amorphous silicon film deposited between the source region and the drain region, removing the exposed portion of the n+ type amorphous silicon film, and forming a protection film over the whole surface of the substrate.
Inventors
- 👤 Dong G. Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/031; H10D30/0312; H10D30/0316; H10D30/0321; H10D30/60; H10D30/67; H10D30/6729; H10D30/673; H10D30/6732; H10D30/6737; H10D30/6739; H10D30/674; H10D30/6741; H10D30/6743; H10D30/6746; H10D64/00; H10D64/01; H10D64/013
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
201 words
A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode having sloped edges on a substrate; depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed; performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the gate insulation film and thus to form the gate insulation film completely; depositing an amorphous silicon film on the gate insulation film to form an active layer; depositing a n+ type amorphous silicon film over the amorphous silicon film to form an ohmic layer; etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer; depositing a metal film on the n+ type amorphous silicon film and patterning said metal film to form source and drain electrodes; removing a portion of the n+ type amorphous silicon film which is exposed between the source and drain electrodes; and forming a protection film over the whole surface of the substrate.
Claim 2
Independent Claim
201 words
A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode having sloped edges on a substrate; depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed; performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the gate insulation film and thus to form the gate insulation film completely; depositing an amorphous silicon film on the gate insulation film to form an active layer; depositing a n+ type amorphous silicon film over the amorphous silicon film to form an ohmic layer; etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer; depositing a metal film on the n+ type amorphous silicon film and patterning said metal film to form source and drain electrodes; removing a portion of the n+ type amorphous silicon film which is exposed between the source and drain electrodes; and forming a protection film over the whole surface of the substrate.
Claim 3
Dependent Claim
26 words
A method in accordance with claim 1, wherein said silicon oxide film is deposited by a CVD method under a high pressure or a sputtering method.
Claim 4
Dependent Claim
22 words
A method in accordance with claim 1, wherein said silicon oxide film is deposited by a CVD method under a low pressure.
Claim 5
Dependent Claim
28 words
A method in accordance with claim 1, wherein the thickness of said silicon nitride film formed on the surface of said silicon oxide film is under 10 angstroms.
Claim 6
Dependent Claim
22 words
A method in accordance with claim 1, wherein the nitrogen concentration in said silicon nitride film is 2 to 15 atomic percent.
Claim 7
Dependent Claim
28 words
A method in accordance with claim 1, wherein the nitrogen plasma treatment process is performed using a nitrogen gas or a gas containing nitrogen in a vacuum chamber.
Claim 8
Dependent Claim
22 words
A method in accordance with claim 6, wherein one of NO and N 2 O is used as the gas containing nitrogen.
Claim 9
Independent Claim
244 words
A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode having sloped edges on a substrate; depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed; performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the silicon oxide film and thus to form the gate insulation film completely; depositing an amorphous silicon film on the gate insulation film to form an active layer; depositing an insulation layer on the amorphous silicon film and then performing a photolithography and etching process to leave the insulation layer only on the amorphous silicon corresponding to the gate electrode; then depositing a n+ type amorphous silicon film on the entire exposed surface of the resulting structure to form an ohmic layer; etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer; depositing a metal film on the n+ type amorphous silicon film and patterning said metal film to form source and drain electrodes; removing a portion of the n+ type amorphous silicon film which is exposed between the source and drain electrodes to expose the remaining insulation layer; and forming a protection film over the whole surface of the substrate.
Claim 10
Independent Claim
244 words
A method for fabricating a thin film transistor, comprising the steps of: forming a gate electrode having sloped edges on a substrate; depositing a silicon oxide film as a gate insulation film on the substrate on which the gate electrode is formed; performing a nitrogen plasma treatment process on the surface of the silicon oxide film to form a silicon nitride film at the surface of the silicon oxide film and thus to form the gate insulation film completely; depositing an amorphous silicon film on the gate insulation film to form an active layer; depositing an insulation layer on the amorphous silicon film and then performing a photolithography and etching process to leave the insulation layer only on the amorphous silicon corresponding to the gate electrode; then depositing a n+ type amorphous silicon film on the entire exposed surface of the resulting structure to form an ohmic layer; etching the n+ type amorphous silicon film and the amorphous silicon film in this order to leave the n+ type amorphous silicon film and the amorphous silicon film only on a portion of the gate insulation layer; depositing a metal film on the n+ type amorphous silicon film and patterning said metal film to form source and drain electrodes; removing a portion of the n+ type amorphous silicon film which is exposed between the source and drain electrodes to expose the remaining insulation layer; and forming a protection film over the whole surface of the substrate.
Claim 11
Dependent Claim
26 words
A method in accordance with claim 8, wherein said silicon oxide film is deposited by a CVD method under a high pressure or a sputtering method.
Claim 12
Dependent Claim
22 words
A method in accordance with claim 8, wherein said silicon oxide film is deposited by a CVD method under a low pressure.
Claim 13
Dependent Claim
28 words
A method in accordance with claim 8, wherein the thickness of said silicon nitride film formed on the surface of said silicon oxide film is under 10 angstroms.
Claim 14
Dependent Claim
22 words
A method in accordance with claim 8, wherein the nitrogen concentration in said silicon nitride film is 2 to 15 atomic percent.
Claim 15
Dependent Claim
28 words
A method in accordance with claim 8, wherein the nitrogen plasma treatment process is performed using a nitrogen gas or a gas containing nitrogen in a vacuum chamber.
Claim 16
Dependent Claim
22 words
A method in accordance with claim 13, wherein one of NO and N 2 O is used as the gas containing nitrogen.
Claim 17
Dependent Claim
47 words
A method in accordance with claim 8, wherein said insulation film serves as an etch stopper layer for preventing said amorphous silicon film located under said exposed n+ type amorphous silicon film from being etched upon etching said exposed portion of the n+ type amorphous silicon film.
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