US6130164A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device having gate oxide formed by selective oxide removal and method of manufacture thereof
Assignee: GlobalFoundries Inc
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Filing: 1997-03-26
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Granted: 2000-10-10
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Expires: 2017-03-26
Abstract
Abstract A semiconductor device having a gate oxide layer formed by selective removal of the gate oxide layer and a process for manufacturing such a device is disclosed. A gate oxide layer is formed on a substrate. The gate oxide layer is selectively removed in a controlled ambient to reduce the thickness of the gate oxide layer. A gate electrode is disposed on the gate oxide layer. In accordance with one particular aspect of the process, the controlled ambient includes an NF 3 bearing gas, which is flowed over the gate oxide layer to remove portions of the oxide layer.
Inventors
- 👤 Mark I. Gardner
- 👤 Mark C. Gilmer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:08
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/0134; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
52 words
A process of forming a semiconductor device, comprising: forming a gate oxide layer having a thickness on a surface of a substrate; and selectively removing a portion of the gate oxide layer in a controlled ambient, having a gas including nitrogen and flourine, to reduce the thickness of the gate oxide layer.
Claim 2
Dependent Claim
52 words
A process of forming a semiconductor device, comprising: forming a gate oxide layer having a thickness on a surface of a substrate; and selectively removing a portion of the gate oxide layer in a controlled ambient, having a gas including nitrogen and flourine, to reduce the thickness of the gate oxide layer.
Claim 3
Dependent Claim
15 words
The process of claim 1, wherein the gate oxide layer is formed from silicon dioxide.
Claim 4
Dependent Claim
15 words
The process of claim 1, wherein the gate oxide layer includes a nitrogen bearing species.
Claim 5
Dependent Claim
18 words
The process of claim 1, wherein forming the gate oxide layer includes growing an oxide on the substrate.
Claim 6
Dependent Claim
25 words
The process of claim 1, wherein the selectively removing the portion of the gate oxide layer includes flowing the gas over the gate oxide layer.
Claim 7
Dependent Claim
19 words
The process of claim 1, wherein nitrogen and fluorine are incorporated in the gate oxide layer via the gas.
Claim 8
Dependent Claim
12 words
The process of claim 1, wherein the gas includes NF 3 .
Claim 9
Dependent Claim
12 words
The process of claim 7, wherein the gas includes N 2 .
Claim 10
Dependent Claim
24 words
The process of claim 8, wherein the gas includes NF 3 and N 2 at a ratio of about 1 to 5% by volume.
Claim 11
Dependent Claim
46 words
The process of claim 1, further including oxidizing the substrate in a controlled ambient after removing the portion of the gate oxide layer so as to increase the thickness of the gate oxide layer and increase the concentration of a substance in the gate oxide layer.
Claim 12
Dependent Claim
13 words
The process of claim 10, wherein the substance includes a nitrogen bearing species.
Claim 13
Dependent Claim
13 words
The process of claim 10, wherein the substance includes a chlorine bearing species.
Claim 14
Dependent Claim
20 words
The process of claim 10, further including repeating the process of selectively removing a portion of the gate oxide layer.
Claim 15
Dependent Claim
18 words
The process of claim 13, further including repeating the process of oxidizing the substrate in a controlled ambient.
Claim 16
Dependent Claim
18 words
The process of claim 10, wherein the substance includes a nitrogen bearing species and a chlorine bearing species.
Claim 17
Dependent Claim
24 words
The process of claim 15, wherein nitrogen, chlorine and fluorine are incorporated in the gate oxide layer via the gas and the controlled ambient.
Claim 18
Dependent Claim
11 words
The process of claim 12, wherein the chlorinebearing species includes HCl.
Claim 19
Dependent Claim
31 words
The process of claim 1, wherein the thickness initially ranges from 60 to 100 angstroms and is selectively reduced in the controlled ambient to a range from 10 to 40 angstroms.
Claim 20
Dependent Claim
44 words
The process of claim 5, wherein the thickness, which initially ranges from 60 to 100 angstroms, is selectively reduced in the controlled ambient to a range from 10 to 40 angstroms, and is increased to a range from 35 to 45 angstroms by oxidation.
Claim 21
Dependent Claim
18 words
The process of claim 1, further including forming one or more gate electrodes on the gate oxide layer.
Claim 22
Dependent Claim
84 words
A process of forming a semiconductor device, comprising: forming a gate oxide layer having an initial thickness t i on a surface of a substrate; selectively removing a portion of the gate oxide layer in a first controlled ambient, having a gas including nitrogen and flourine, to reduce the gate oxide layer to a thickness t r1 ; and oxidizing the substrate, including the gate oxide layer in a second controlled ambient to increase the gate oxide layer to a thickness t g1 .
Claim 23
Dependent Claim
84 words
A process of forming a semiconductor device, comprising: forming a gate oxide layer having an initial thickness t i on a surface of a substrate; selectively removing a portion of the gate oxide layer in a first controlled ambient, having a gas including nitrogen and flourine, to reduce the gate oxide layer to a thickness t r1 ; and oxidizing the substrate, including the gate oxide layer in a second controlled ambient to increase the gate oxide layer to a thickness t g1 .
References Cited (Backward Citations)
US4764481A
Cited
US5043224A
Cited
US5316981A
Cited
US5362685A
Cited
US5913149A
Cited
US5264396A
Cited
US5334556A
Cited
US5382533A
Cited
US5591681A
Cited
US5712208A
Cited
US5571734A
Cited
US5846888A
Cited
US5851888A
Cited
US5849643A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-10-10 | 2004-04-10 | 2004-10-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-10-10 | 2008-04-10 | 2008-10-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-10-10 | 2012-04-10 | 2012-10-10 | $7700.00 | Window Closed / Lapsed |