US5913149A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for fabricating stacked layer silicon nitride for low leakage and high capacitance
Assignee: Micron Technology Inc
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Filing: 1994-09-14
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Granted: 1999-06-15
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Expires: 2014-09-14
Abstract
Abstract A method is provided for forming silicon nitride stacks. A semiconductor substrate is cleaned to remove any native oxide, and an insulative material is disposed thereon. A plurality of films are deposited superjacent the insulative material, and each of the plurality of films converted into a dielectric to form a multi-layered stack. A fill layer is formed superjacent the multi-layered stack to seal any pinholes. The fill layer is formed by at least one of low temperature chemical vapor deposition (CVD) of oxide, low temperature deposition of nitride, low temperature re-oxidation of ozone, the low temperature is at least 20° C.
Inventors
- 👤 Randhir P. S. Thakur
- 👤 Gurtej Singh Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:06
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; H10P14/63; H10P14/6302; H10P14/6304; H10P14/6306; H10P14/6308; H10P14/6309; H10P14/6326; H10P14/6328; H10P14/6332; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6516; H10P14/6518; H10P14/6519; H10P14/6522; H10P14/6529; H10P14/66; H10P14/662; H10P14/692; H10P14/6921; H10P14/69215; H10P70/00; H10P70/10; H10P70/12; H10P70/125; H10W; H10W20/00; H10W20/01; H10W20/071; H10P14/6316; H10P14/6322
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
119 words
A method for fabricating muiti-layer dielectrics, the method comprising the steps of: cleaning of a silicon substrate with a reactive gas at a temperature which is within a range of 850° C. to 1250° C. to remove native oxide from the silicon substrate, the reactive gas comprising at least one of NF 3 , GeH 4 , HF, and H 2 ; after the step of cleaning, rapid thermal nitridizing followed by depositing nitride to form a first dielectric layer on the silicon substrate; depositing a semiconductor layer on the first dielectric layer; rapid thermal nitridizing to convert at least a portion of the semiconductor layer to a second dielectric layer; and rapid thermal oxidizing the second dielectric layer.
Claim 2
Independent Claim
119 words
A method for fabricating muiti-layer dielectrics, the method comprising the steps of: cleaning of a silicon substrate with a reactive gas at a temperature which is within a range of 850° C. to 1250° C. to remove native oxide from the silicon substrate, the reactive gas comprising at least one of NF 3 , GeH 4 , HF, and H 2 ; after the step of cleaning, rapid thermal nitridizing followed by depositing nitride to form a first dielectric layer on the silicon substrate; depositing a semiconductor layer on the first dielectric layer; rapid thermal nitridizing to convert at least a portion of the semiconductor layer to a second dielectric layer; and rapid thermal oxidizing the second dielectric layer.
Claim 3
Dependent Claim
49 words
A method, as in claim 1, wherein the step of depositing the semiconductor layer and the step of depositing the nitride are done with a process comprising at least one of molecular beam epitaxial, chemical vapor deposition, low pressure chemical vapor deposition, and rapid thermal process chemical vapor deposition.
Claim 4
Independent Claim
97 words
A method for fabricating multi-layer dielectrics, the method comprising the steps of: cleaning of a silicon substrate with vapor phase hydrogen halide at a temperature which is as low as 20° C. to remove native oxide from the silicon substrate; after the step of cleaning, rapid thermal nitridizing followed by depositing nitride to form a first dielectric layer on the silicon substrate; depositing a semiconductor layer on the first dielectric layer; rapid thermal nitridizing to convert at least a portion of the semiconductor layer to a second dielectric layer; and rapid thermal oxidizing the second dielectric layer.
Claim 5
Independent Claim
97 words
A method for fabricating multi-layer dielectrics, the method comprising the steps of: cleaning of a silicon substrate with vapor phase hydrogen halide at a temperature which is as low as 20° C. to remove native oxide from the silicon substrate; after the step of cleaning, rapid thermal nitridizing followed by depositing nitride to form a first dielectric layer on the silicon substrate; depositing a semiconductor layer on the first dielectric layer; rapid thermal nitridizing to convert at least a portion of the semiconductor layer to a second dielectric layer; and rapid thermal oxidizing the second dielectric layer.
Claim 6
Dependent Claim
49 words
A method, as in claim 3, wherein the step of depositing the semiconductor layer and the step of depositing the nitride are done with a process comprising at least one of molecular beam epitaxial, chemical vapor deposition, low pressure chemical vapor deposition, and rapid thermal process chemical vapor deposition.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2002-06-14 | 2002-12-14 | 2003-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2006-06-14 | 2006-12-14 | 2007-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2010-06-14 | 2010-12-14 | 2011-06-15 | $7700.00 | Window Closed / Lapsed |