US5380399A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of treating semiconductor substrates
Assignee: Toshiba Corp
•
Filing: 1993-09-14
•
Granted: 1995-01-10
•
Expires: 2013-09-14
Abstract
Abstract To heat treat a semiconductor substrate without forming an oxide film on the surface thereof, the method of heat treating a semiconductor substrate, comprises: a step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature 150° C. or lower; a step 2 of heating the heat treating chamber up to about 200° C. to emit moisture adhering to the semiconductor substrate; a step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and a step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.
Inventors
- 👤 Naoto Miyashita
- 👤 Koichi Takahashi
- 👤 Mitsutoshi Koyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 10:48
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10P70/12
Claims Analysis
Total Claims: 31
Claim 1
Independent Claim
101 words
A method of heat treating a semiconductor substrate, comprising: step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature of about 150° C. or lower; step 2 of heating the heat treating chamber up to about 200° C. to remove moisture adhering to the semiconductor substrate; step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.
Claim 2
Independent Claim
101 words
A method of heat treating a semiconductor substrate, comprising: step 1 of carrying a semiconductor substrate into a heat treating chamber heated at a temperature of about 150° C. or lower; step 2 of heating the heat treating chamber up to about 200° C. to remove moisture adhering to the semiconductor substrate; step 3 of introducing an etching gas into the heat treating chamber to etch an oxide film formed on the surface of the semiconductor substrate; and step 4 of raising the temperature within the heat treating chamber up to a heat treating temperature to heat treat the semiconductor substrate.
Claim 3
Dependent Claim
37 words
The method of heat treating a semiconductor substrate according to claim 1, wherein in step 3, the oxide film is etched by use of a hydrogen fluoride gas containing trace amount of moisture as the etching gas.
Claim 4
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 1, which further comprises, after step 4, a step 5A of introducing a gas containing silicon to form a poly silicon layer on the surface of the semiconductor substrate.
Claim 5
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 2, which further comprises, after step 4, a step 5A of introducing a gas containing silicon to form a poly silicon layer on the surface of the semiconductor substrate.
Claim 6
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 1, which further comprises, after step 4, step 5B of introducing a gas containing silicon and nitrogen to form a nitride film layer on the surface of the semiconductor substrate.
Claim 7
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 2, which further comprises, after step 4, step 5B of introducing a gas containing silicon and nitrogen to form a nitride film layer on the surface of the semiconductor substrate.
Claim 8
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 3, wherein the etching gas used in step 3 is a hydrogen fluoride gas containing about 2000 ppm moisture and about 5% nitrogen as a base gas.
Claim 9
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 4, wherein the etching gas used in step 3 is a hydrogen fluoride gas containing about 2000 ppm moisture and about 5% nitrogen as a base gas.
Claim 10
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 5, wherein the etching gas used in step 3 is a hydrogen fluoride gas containing about 2000 ppm moisture and about 5% nitrogen as a base gas.
Claim 11
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 6, wherein the etching gas used in step 3 is a hydrogen fluoride gas containing about 2000 ppm moisture and about 5% nitrogen as a base gas.
Claim 12
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 7, wherein, in step 3, the temperature in the heat treating chamber is lowered to about 50° C. before the etching gas is introduced into the heat treating chamber.
Claim 13
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 8, wherein, in step 3, the temperature in the heat treating chamber is lowered to about 50° C. before the etching gas is introduced into the heat treating chamber.
Claim 14
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 9, wherein, in step 3, the temperature in the heat treating chamber is lowered to about 50° C. before the etching gas is introduced into the heat treating chamber.
Claim 15
Dependent Claim
40 words
The method of heat treating a semiconductor substrate according to claim 10, wherein, in step 3, the temperature in the heat treating chamber is lowered to about 50° C. before the etching gas is introduced into the heat treating chamber.
Claim 16
Dependent Claim
36 words
The method of heat treating a semiconductor substrate according to claim 11, wherein, in step 2, the heat treating chamber is substantially evacuated to a vacuum before the temperature of the heat treating chamber is raised.
Claim 17
Dependent Claim
36 words
The method of heat treating a semiconductor substrate according to claim 12, wherein, in step 2, the heat treating chamber is substantially evacuated to a vacuum before the temperature of the heat treating chamber is raised.
Claim 18
Dependent Claim
36 words
The method of heat treating a semiconductor substrate according to claim 13, wherein, in step 2, the heat treating chamber is substantially evacuated to a vacuum before the temperature of the heat treating chamber is raised.
Claim 19
Dependent Claim
36 words
The method of heat treating a semiconductor substrate according to claim 14, wherein, in step 2, the heat treating chamber is substantially evacuated to a vacuum before the temperature of the heat treating chamber is raised.
Claim 20
Dependent Claim
30 words
The method of heat treating a semiconductor substrate according to claim 15, wherein, in step 2, the heat treating chamber is kept at approximately 200° C. for about 30 min.
Claim 21
Dependent Claim
30 words
The method of heat treating a semiconductor substrate according to claim 16, wherein, in step 2, the heat treating chamber is kept at approximately 200° C. for about 30 min.
Claim 22
Dependent Claim
30 words
The method of heat treating a semiconductor substrate according to claim 17, wherein, in step 2, the heat treating chamber is kept at approximately 200° C. for about 30 min.
Claim 23
Dependent Claim
30 words
The method of heat treating a semiconductor substrate according to claim 18, wherein, in step 2, the heat treating chamber is kept at approximately 200° C. for about 30 min.
Claim 24
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 19, wherein, in step 4, the heat treating chamber is evacuated substantially to a vacuum before the temperature of the heat treating chamber is raised to the heat treating temperature.
Claim 25
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 20, wherein, in step 4, the heat treating chamber is evacuated substantially to a vacuum, before the temperature of the heat treating chamber is raised to the heat treating temperature.
Claim 26
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 21, wherein, in step 4, the heat treating chamber is evacuated substantially to a vacuum, before the temperature of the heat treating chamber is raised to the heat treating temperature.
Claim 27
Dependent Claim
41 words
The method of heat treating a semiconductor substrate according to claim 22, wherein, in step 4, the heat treating chamber is evacuated substantially to a vacuum, before the temperature of the heat treating chamber is raised to the heat treating temperature.
Claim 28
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 23, wherein the heating rate in the heat treating chamber is about 20° C. per min and the cooling rate therein is about 15° C. per min.
Claim 29
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 24, wherein the heating rate in the heat treating chamber is about 20° C. per min and the cooling rate therein is about 15° C. per min.
Claim 30
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 25, wherein the heating rate in the heat treating chamber is about 20° C. per min and the cooling rate therein is about 15° C. per min.
Claim 31
Dependent Claim
38 words
The method of heat treating a semiconductor substrate according to claim 26, wherein the heating rate in the heat treating chamber is about 20° C. per min and the cooling rate therein is about 15° C. per min.
References Cited (Backward Citations)
US4981811A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-01-09 | 1998-07-11 | 1999-01-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-09 | 2002-07-11 | 2003-01-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-09 | 2006-07-11 | 2007-01-10 | $7700.00 | Window Closed / Lapsed |