US5208189A
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Process for plugging defects in a dielectric layer of a semiconductor device
Assignee: NXP USA Inc
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Filing: 1991-09-30
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Granted: 1993-05-04
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Expires: 2011-09-30
Abstract
Abstract Defects in a thin dielectric layer of a semiconductor device are plugged by a discontinuous layer to maintain integrity of the dielectric without degrading the reliability of the device. In one form of the invention, a semiconductor device (10) includes an oxide layer (14) formed on a substrate material (12). Growth of a nitride layer (18), using CVD techniques, is initiated in any defects (16) in the oxide layer, but growth is terminated prior to entering a continuous growth stage. By plugging the defects with nitride without forming a continuous nitride layer, defect density in thin oxides is reduced without experiencing disadvantages associated with thick oxide-nitride stacks. The invention is also applicable to plugging defects in dielectric layers other than oxide. Furthermore, growth of a discontinuous layer may be achieved with a material other than a nitride using CVD techniques.
Inventors
- 👤 Bich-Yen Nguyen
- 👤 Philip J. Tobin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:36
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6349; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10P14/66; H10P14/662; H10P95/00; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/668; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/694; H10P14/6943; H10P14/69433; Y; Y10; Y10S; Y10S148/00; Y10S148/025; Y10S148/043; Y10S148/081; Y10S148/118
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
68 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a substrate material; forming an dielectric layer on the substrate material; after forming the dielectric layer, initiating growth of a predetermined material in any defects in the dielectric layer; and terminating growth of the predetermined material prior to forming a continuous film of the predetermined material across the dielectric layer.
Claim 2
Dependent Claim
68 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a substrate material; forming an dielectric layer on the substrate material; after forming the dielectric layer, initiating growth of a predetermined material in any defects in the dielectric layer; and terminating growth of the predetermined material prior to forming a continuous film of the predetermined material across the dielectric layer.
Claim 3
Dependent Claim
26 words
The process of claim 1 wherein the step of initiating growth of a predetermined material comprises initiating growth of a predetermined material using chemical vapor deposition.
Claim 4
Dependent Claim
22 words
The process of claim 2 wherein the step of initiating growth of a predetermined material comprises initiating growth of a nitride layer.
Claim 5
Dependent Claim
34 words
The process of claim 3 wherein the step of initiating growth of a nitride layer comprises initiating growth of a nitride layer using a nitrogen bearing gas species and a silicon bearing gas species.
Claim 6
Dependent Claim
35 words
The process of claim 4 wherein the step of initiating growth of a nitride layer comprises initiating growth of a nitride layer using an ammonia source gas and a source gas comprising silicon and hydrogen.
Claim 7
Dependent Claim
49 words
The process of claim 1 wherein the step of terminating growth of the predetermined material comprises: determining an amount of time required to cause an increase in a deposition rate of the predetermined material; and terminating growth of the predetermined material prior to expiration of the amount of time.
Claim 8
Dependent Claim
27 words
The process of claim 6 wherein the step of initiating growth of a predetermined material comprises initiating growth of a silicon nitride layer using chemical vapor deposition.
Claim 9
Dependent Claim
112 words
A process for plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a substrate material; forming an oxide layer overlying the substrate material; exposing the oxide layer to an ambient of nitrogen and silicon bearing gas species to initiate growth of a nitride film in any defects in the oxide layer; determining a transition point in a deposition rate curve of the nitride film which represents an end of a nuclei growth stage of the nitride film and a beginning of a continuous growth stage of the nitride film; and terminating exposure of the oxide layer to the ambient prior to the transition point in time.
Claim 10
Dependent Claim
112 words
A process for plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a substrate material; forming an oxide layer overlying the substrate material; exposing the oxide layer to an ambient of nitrogen and silicon bearing gas species to initiate growth of a nitride film in any defects in the oxide layer; determining a transition point in a deposition rate curve of the nitride film which represents an end of a nuclei growth stage of the nitride film and a beginning of a continuous growth stage of the nitride film; and terminating exposure of the oxide layer to the ambient prior to the transition point in time.
Claim 11
Dependent Claim
25 words
The process of claim 8 wherein the step of forming an oxide layer comprises forming an oxide layer having a thickness not greater than 300Å.
Claim 12
Dependent Claim
19 words
The process of claim 9 wherein the step of forming an oxide layer comprises forming a gate oxide layer.
Claim 13
Dependent Claim
31 words
The process of claim 8 wherein the step of exposing the oxide layer comprises initiating growth of a nitride film in any defects in the oxide layer by chemical vapor deposition.
Claim 14
Dependent Claim
44 words
The process of claim 11 wherein the step of initiating growth of a nitride film by chemical vapor deposition comprises initiating growth of a nitride film by chemical vapor deposition using a combination of an ammonia gas and a gas comprising silicon and hydrogen.
Claim 15
Dependent Claim
108 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a silicon substrate; forming an oxide layer on the silicon substrate, the oxide layer having a thickness not greater than 300Å; placing the substrate with the oxide layer in a reaction chamber; introducing an ammonia gas and a gas comprising silicon into the reaction chamber; reacting the ammonia gas and the gas comprising silicon to initiate growth of a nitride film on the oxide layer; and terminating the reaction of the ammonia gas and the gas comprising silicon prior to entering a stage of continuous growth of the nitride film.
Claim 16
Dependent Claim
108 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a silicon substrate; forming an oxide layer on the silicon substrate, the oxide layer having a thickness not greater than 300Å; placing the substrate with the oxide layer in a reaction chamber; introducing an ammonia gas and a gas comprising silicon into the reaction chamber; reacting the ammonia gas and the gas comprising silicon to initiate growth of a nitride film on the oxide layer; and terminating the reaction of the ammonia gas and the gas comprising silicon prior to entering a stage of continuous growth of the nitride film.
Claim 17
Dependent Claim
38 words
The process of claim 13 wherein the step of introducing a gas comprising silicon comprises introducing a gas selected from the group of gases consisting of SiH 2 Cl 2 , SiHCl 3 , and SiH 4 .
Claim 18
Dependent Claim
22 words
The process of claim 13 wherein the step of forming an oxide layer comprises thermally growing an oxide on the silicon substrate.
Claim 19
Dependent Claim
25 words
The process of claim 13 wherein the step of forming an oxide layer comprises depositing an oxide on the silicon substrate using chemical vapor deposition.
Claim 20
Dependent Claim
28 words
The process of claim 13 wherein the step of reacting comprises reacting the gases in a reaction chamber at a temperature substantially in the range of 400°-900° C.
Claim 21
Dependent Claim
28 words
The process of claim 13 wherein the step of reacting comprises reacting the gases in a reaction chamber at a pressure substantially in the range of 200-800 mtorr.
Claim 22
Dependent Claim
74 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a semiconductor substrate material; forming a dielectric layer on the substrate material; after forming the dielectric layer, initiating growth of a predetermined material in any defects in the dielectric layer, the growth of the predetermined material having an initial growth rate; terminating growth of the predetermined material prior to an increase in the initial growth rate.
Claim 23
Dependent Claim
74 words
A process of plugging defects in a dielectric layer of a semiconductor device, comprising the steps of: providing a semiconductor substrate material; forming a dielectric layer on the substrate material; after forming the dielectric layer, initiating growth of a predetermined material in any defects in the dielectric layer, the growth of the predetermined material having an initial growth rate; terminating growth of the predetermined material prior to an increase in the initial growth rate.
Claim 24
Dependent Claim
26 words
The process of claim 19 wherein the step of initiating growth of a predetermined material comprises initiating growth of a predetermined material using chemical vapor deposition.
Claim 25
Dependent Claim
21 words
The process of claim 20 wherein the step of initiating growth of a predetermined material comprises initiating growth of a nitride.
References Cited (Backward Citations)
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