US5178682A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming a thin layer on a semiconductor substrate and apparatus therefor
Assignee: Mitsubishi Electric Corp
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Filing: 1991-04-18
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Granted: 1993-01-12
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Expires: 2011-04-18
Abstract
Abstract A method and apparatus for manufacturing a semiconductor device having a thin layer of material formed on a semiconductor substrate with a much improved interface between them are disclosed. A silicon substrate is heated up to a temperature around 300° C. in the presence of ozone gas under exposure to UV light. Through this process, organic contaminants that might be present on the surface of the silicon substrate are dissipated by oxidation, and a thin oxide film is formed on the substrate surface on the other. The silicon substrate with the thin oxide film coated thereon is then heated up to temperatures of 200°-700° C. in the presence of HCl gas under illumination to UV light to strip the oxide film off the substrate surface, thereby exposing the cleaned substrate surface. Finally, HCl cleaned surface of the silicon substrate is coated with a thin layer of material such as monocrystalline silicon without exposing the cleaned substrate surface. The method provides a semiconductor with the thin layer of material formed thereon having a well-controlled, well organized interface between them.
Inventors
- 👤 Katsuhiro Tsukamoto
- 👤 Akira Tokui
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 18:43
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/65; H10P14/6502; H10P14/6504; H10P14/6509; H10P14/6512; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
210 words
An apparatus for forming a thin layer on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on the surface of the semiconductor substrate by irradiating light on a surface of a semiconductor substrate while the semiconductor substrate is exposed to an oxidizing gas atmosphere within said oxide forming compartment; a cleaning compartment connected to said oxide forming compartment, said cleaning compartment including means for removing the thin oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within said cleaning chamber for removing the thin oxide film and white simultaneously irradiating the surface of the semiconductor substrate with light; a film forming compartment connected to said cleaning compartment, said film forming compartment including means for forming a thin film on the clean surface of the semiconductor substrate; first transferring means for transferring the semiconductor substrate from said oxide forming compartment to said cleaning compartment without exposing the semiconductor substrate to ambient air; and second transferring means for transferring the semiconductor substrate from said cleaning compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
Claim 2
Independent Claim
210 words
An apparatus for forming a thin layer on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on the surface of the semiconductor substrate by irradiating light on a surface of a semiconductor substrate while the semiconductor substrate is exposed to an oxidizing gas atmosphere within said oxide forming compartment; a cleaning compartment connected to said oxide forming compartment, said cleaning compartment including means for removing the thin oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within said cleaning chamber for removing the thin oxide film and white simultaneously irradiating the surface of the semiconductor substrate with light; a film forming compartment connected to said cleaning compartment, said film forming compartment including means for forming a thin film on the clean surface of the semiconductor substrate; first transferring means for transferring the semiconductor substrate from said oxide forming compartment to said cleaning compartment without exposing the semiconductor substrate to ambient air; and second transferring means for transferring the semiconductor substrate from said cleaning compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
Claim 3
Dependent Claim
22 words
The apparatus according to claim 1, wherein said film forming compartment includes means for forming a thin film by chemical vapor deposition.
Claim 4
Dependent Claim
21 words
The apparatus according to claim 1, wherein said film forming compartment includes means for forming a thin film by sputter deposition.
Claim 5
Independent Claim
242 words
An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on the surface of a semiconductor substrate by irradiating a surface of the semiconductor substrate with light while exposing the semiconductor substrate to an oxidizing gas atmosphere; a cleaning compartment connected to said oxide forming compartment, said cleaning compartment including means for removing t he thin oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within said cleaning chamber for removing the thin oxide film and by irradiating light to the surface of the semiconductor substrate; an intermediate compartment connected to said cleaning compartment for temporarily accommodating the semiconductor substrate; a film forming compartment connected to said intermediate compartment, said film forming compartment including means for forming a thin film on the clean surface of the semiconductor substrate; first transferring means for transferring said semiconductor substrate from said oxide forming compartment to said cleaning compartment without exposing said semiconductor substrate to ambient air; second transferring means for transferring said semiconductor substrate from said cleaning compartment to said intermediate compartment without exposing said semiconductor substrate to ambient air; and third transferring means for transferring said semiconductor substrate from said intermediate compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
Claim 6
Independent Claim
242 words
An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on the surface of a semiconductor substrate by irradiating a surface of the semiconductor substrate with light while exposing the semiconductor substrate to an oxidizing gas atmosphere; a cleaning compartment connected to said oxide forming compartment, said cleaning compartment including means for removing t he thin oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within said cleaning chamber for removing the thin oxide film and by irradiating light to the surface of the semiconductor substrate; an intermediate compartment connected to said cleaning compartment for temporarily accommodating the semiconductor substrate; a film forming compartment connected to said intermediate compartment, said film forming compartment including means for forming a thin film on the clean surface of the semiconductor substrate; first transferring means for transferring said semiconductor substrate from said oxide forming compartment to said cleaning compartment without exposing said semiconductor substrate to ambient air; second transferring means for transferring said semiconductor substrate from said cleaning compartment to said intermediate compartment without exposing said semiconductor substrate to ambient air; and third transferring means for transferring said semiconductor substrate from said intermediate compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
Claim 7
Independent Claim
177 words
An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on a surface of a semiconductor substrate by irradiating the surface of the semiconductor substrate with light while the semiconductor substrate is exposed to an oxidizing gas atmosphere within said oxide forming compartment; and a film forming compartment connected to said oxide forming compartment, wherein said film forming compartment includes: means for removing the oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within the film forming compartment for removing the oxide film and by irradiating the surface of the semiconductor substrate with light, and means for forming a thin film on the clean surface of said semiconductor substrate; said apparatus further comprising: transferring means for transferring said semiconductor substrate from said oxide forming compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
Claim 8
Independent Claim
177 words
An apparatus for forming a thin film on a surface of a semiconductor substrate, comprising: an oxide forming compartment including means for forming a thin oxide film on a surface of a semiconductor substrate by irradiating the surface of the semiconductor substrate with light while the semiconductor substrate is exposed to an oxidizing gas atmosphere within said oxide forming compartment; and a film forming compartment connected to said oxide forming compartment, wherein said film forming compartment includes: means for removing the oxide film and for providing a clean surface of the semiconductor substrate by heating the semiconductor substrate to 200° to 700° C. while the semiconductor substrate is exposed to an atmosphere within the film forming compartment for removing the oxide film and by irradiating the surface of the semiconductor substrate with light, and means for forming a thin film on the clean surface of said semiconductor substrate; said apparatus further comprising: transferring means for transferring said semiconductor substrate from said oxide forming compartment to said film forming compartment without exposing said semiconductor substrate to ambient air.
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