US4435447A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for forming an insulating film on a semiconductor substrate surface
Assignee: Fujitsu Ltd
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Filing: 1981-11-18
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Granted: 1984-03-06
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Expires: 2001-11-18
Abstract
Abstract A method for forming an insulating film on the surface of a silicon semiconductor substrate of a semiconductor device. The semiconductor substrate is subjected to a direct thermal nitridation, in a gas atmosphere containing nitrogen or nitrogen atoms. The semiconductor substrate has an average concentration of oxygen of not more than 10 18 /cm 3 . The silicon nitride film formed by the direct thermal nitridation is thin, even and amorphous. The structure of the interface between the silicon substrate and the silicon nitride film is highly dense.
Inventors
- 👤 Takashi Ito
- 👤 Takao Nozaki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 22:08
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6302; H10P14/6316; C; C04; C04B; C04B41/00; C04B41/009; C04B41/45; C04B41/50; C04B41/5053; C04B41/5062; C04B41/5066; C04B41/80; C04B41/81; C04B41/85; C04B41/87; H10P14/6322; H10P14/69; H10P14/694; H10P14/6943; H10P14/69433; C04B2111/00; C04B2111/00474; C04B2111/00844
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
113 words
A method for forming an insulating film having stable electrical properties and high density and which is suitable for a gate insulating film, by direct thermal nitridation of a surface portion of a silicon semiconductor substrate, comprising selecting said substrate to have a concentration of oxygen of not more than 10 18 /cm 3 at least in a surface layer of said substrate of at least 10 microns depth at the top of which said direct nitridation is to occur, and subjecting said substrate to a nitridizing gas atmosphere comprising nitrogen or a nitrogen compound, so as to convert the top portion of said substrate to said insulating film by direct thermal nitridation.
Claim 2
Independent Claim
113 words
A method for forming an insulating film having stable electrical properties and high density and which is suitable for a gate insulating film, by direct thermal nitridation of a surface portion of a silicon semiconductor substrate, comprising selecting said substrate to have a concentration of oxygen of not more than 10 18 /cm 3 at least in a surface layer of said substrate of at least 10 microns depth at the top of which said direct nitridation is to occur, and subjecting said substrate to a nitridizing gas atmosphere comprising nitrogen or a nitrogen compound, so as to convert the top portion of said substrate to said insulating film by direct thermal nitridation.
Claim 3
Dependent Claim
25 words
The method of claim 1 comprising heating said substrate to a temperature in the range from 900° to 1300° C. within said nitridizing gas atmosphere.
Claim 4
Dependent Claim
13 words
The method of claim 2, said temperature range being from 1000° to 1200°.
Claim 5
Dependent Claim
29 words
The method of claim 1, 2 or 3, said nitridizing gas atmosphere comprising nitrogen gas, with a maximum concentration of oxygen in said nitridizing gas atmosphere of 1 ppm.
Claim 6
Dependent Claim
30 words
The method of claim 1, 2 or 3, said nitridizing gas atmosphere comprising a nitrogen compound with a maximum concentration of oxygen in said nitridizing gas atmosphere of 1000 ppm.
Claim 7
Dependent Claim
13 words
The method of claim 5, said nitridizing gas atmosphere comprising ammonia or hydrazine.
Claim 8
Dependent Claim
79 words
The method of claim 1, 2 or 3, said substrate having an epitaxial layer of silicon formed thereon, said maximum oxygen concentration applying to the top 10 microns of the combination of said epitaxial layer on the surface of said substrate, and the top portion of said combination of said epitaxial layer on said substrate being subjected to said nitridizing gas atmosphere so as to form said insulating film by the nitridation of the top portion of said combination.
Claim 9
Dependent Claim
27 words
The method of claim 1, 2 or 3 comprising forming said insulating film to have a thickness in the range from 10 -3 to 10 -1 microns.
Claim 10
Dependent Claim
14 words
The method of claim 7, said epitaxial layer being more than 10 microns thick.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1987-03-06 | 1987-09-05 | 1988-03-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1991-03-06 | 1991-09-05 | 1992-03-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1995-03-06 | 1995-09-05 | 1996-03-06 | $7700.00 | Window Closed / Lapsed |