Patent US6343364B1 successfully refreshed from Google Patents.
US5100495A
Expired / Lapsed
US
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Dry etching apparatus with diluted anhydrous hydrogen fluoride gas generator
Assignee: Stella Chemifa Corp
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Filing: 1991-04-08
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Granted: 1992-03-31
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Expires: 2011-04-08
Abstract
Abstract Dry etching apparatus composed of any of metal, silica, ceramic or combination thereof with a processing chamber in which substrates are placed and a diluted anhydrous hydrogen fluoride gas generator, the processing chamber being connected to the diluted anhydrous hydrogen fluoride gas generator through a pipe line of stainless steel or nickel. There is also disclosed a dry-etching method with the dry-etching apparatus, and a diluted anhydrous hydrogen gas generator used in the dry-etching apparatus and dry-etching method.
Inventors
- 👤 Tadahiro Ohmi
- 👤 Masahiro Miki
- 👤 Hirohisa Kikuyama
- 👤 Matagoro Maeno
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 03:18
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32431; H01J37/3244; C; C23; C23F; C23F1/00; C23F1/08; H10; H10P; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P70/00; H10P70/10; H10P70/12; H10P70/125; H10P70/20; H10P70/23; H10P70/234
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
131 words
A dry-etching apparatus for selectively cleaning the surfaces of a substrate having SiO 2 films, comprising: a processing chamber made of metal or silica for receiving the substrate; means for supplying an inert gas to said processing chamber; means for generating an anhydrous hydrogen fluoride gas containing not more than 1 ppm of H 2 O, said means for generating anhydrous hydrogen fluoride gas being composed of metal; means for cooling said means for generating anhydrous hydrogen fluoride gas to or below -10° C. and a metal conduit for conveying the anhydrous hydrogen fluoride gas to the processing chamber wherein the concentration of the anhydrous hydrogen fluoride gas, upon mixing with the inert gas in the processing chamber is not more than 7% and said SiO 2 films are selectively etched.
Claim 2
Dependent Claim
131 words
A dry-etching apparatus for selectively cleaning the surfaces of a substrate having SiO 2 films, comprising: a processing chamber made of metal or silica for receiving the substrate; means for supplying an inert gas to said processing chamber; means for generating an anhydrous hydrogen fluoride gas containing not more than 1 ppm of H 2 O, said means for generating anhydrous hydrogen fluoride gas being composed of metal; means for cooling said means for generating anhydrous hydrogen fluoride gas to or below -10° C. and a metal conduit for conveying the anhydrous hydrogen fluoride gas to the processing chamber wherein the concentration of the anhydrous hydrogen fluoride gas, upon mixing with the inert gas in the processing chamber is not more than 7% and said SiO 2 films are selectively etched.
Claim 3
Dependent Claim
16 words
The apparatus of claim 1, wherein said metal conduit is a stainless steel or nickel conduit.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-03-31 | 1995-09-30 | 1996-03-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-03-31 | 1999-09-30 | 2000-03-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-03-31 | 2003-09-30 | 2004-03-31 | $7700.00 | Window Closed / Lapsed |