EP1535320A2
Expired / Lapsed
EP
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Atomic layer deposition of high k metal silicates
Assignee: Integrated Process Systems Ltd
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Filing: 2003-08-18
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Granted: —
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Expires: 2023-08-18
Abstract
Abstract The present invention relates to the atomic layer deposition ("ALD") of high k dielectric layers of metal silicates, including hafnium silicate. More particularly, the present invention relates to the ALD formation of metal silicates using metal organic precursors, silicon organic precursors and ozone. Preferably, the metal organic precursor is a metal alkyl amide and the silicon organic precursor is a silicon alkyl amide.
Inventors
- 👤 Sang-In Lee
- 👤 Yoshihide Senzaki
- 👤 Sang-Kyoo Lee
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 00:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/60; H10P14/66; H10P14/668; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/401; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; H10P14/6681; H10P14/6684; H10P14/6686; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6921; H10P14/6928; H10P14/693; H10P14/6932; H10P14/6934
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