US6573182B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Chemical vapor deposition using organometallic precursors
Assignee: Micron Technology Inc
•
Filing: 2001-09-24
•
Granted: 2003-06-03
•
Expires: 2021-09-24
Abstract
Abstract A multi-component layer is deposited on a semiconductor substrate in a semiconductor process. The multi-component layer may be a dielectric layer formed from a gaseous titanium organometallic precursor, reactive silane-based gas and a gaseous oxidant. The multi-component layer may be deposited in a cold wall or hot wall chemical vapor deposition (CVD) reactor, and in the presence or absence of plasma. The multi-component layer may also be deposited using other processes, such as radiant energy or rapid thermal CVD.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Pierre Fazan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:56
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/662; H10P14/6681; H10P14/6682; H10P14/69; H10P14/692; H10P14/6921; H10P14/69215; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69393; H10P14/694; H10P14/6943; H10P14/69433; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/033; H10P14/6339; H10P14/69394
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
60 words
A method of depositing a multi-component layer comprising two or more nitrides on a semiconductor substrate, comprising the step of: exposing the semiconductor substrate to gaseous organometallic precursor and reactive gas under conditions effective to cause the gaseous organometallic precursor and reactive gas to combine and deposit a multi-component layer comprised of two or more nitrides on the semiconductor substrate.
Claim 2
Independent Claim
60 words
A method of depositing a multi-component layer comprising two or more nitrides on a semiconductor substrate, comprising the step of: exposing the semiconductor substrate to gaseous organometallic precursor and reactive gas under conditions effective to cause the gaseous organometallic precursor and reactive gas to combine and deposit a multi-component layer comprised of two or more nitrides on the semiconductor substrate.
Claim 3
Dependent Claim
42 words
The method of claim 1 , wherein the multi-component layer comprises at least one of a mixture of silicon nitride and aluminum nitride, a mixture of tantalum nitride and titanium nitride, or a mixture of tantalum nitride, titanium nitride and zirconium nitride.
References Cited (Backward Citations)
US5183684A
Cited
US5470398A
Cited
US5173327A
Cited
US5203925A
Cited
US5227334A
Cited
US5278100A
Cited
WO1993012542A1
Cited
WO1993012538A1
Cited
US5252518A
Cited
US5254499A
Cited
US5376405A
Cited
US5273783A
Cited
US5425392A
Cited
US5384289A
Cited
EP0689249A2
Cited
US6090709A
Cited
US6281123B1
Cited
US5629229A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-06-02 | 2006-12-02 | 2007-06-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-06-02 | 2010-12-02 | 2011-06-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-06-02 | 2014-12-02 | 2015-06-03 | $7700.00 | Window Closed / Lapsed |