US6884675B2
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Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the same
Assignee: Samsung Electronics Co Ltd
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Filing: 2004-03-24
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Granted: 2005-04-26
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Expires: 2024-03-24
Abstract
Abstract Semiconductor capacitors comprise first electrodes, second electrodes, and tantalum oxide layers positioned between the first electrodes and the second electrodes. The tantalum oxide layers are formed by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and wherein R1 and R2 are independently alkyl.
Inventors
- 👤 Jeong-hee Chung
- 👤 In-sung Park
- 👤 Jae-hyun Yeo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
H; H10; H10B; H10B12/00; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/668; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/405; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45553; H10D; H10D1/00; H10D1/60; H10D1/68; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69393
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
79 words
A method of making a semiconductor capacitor comprising: forming a first electrode on a semiconductor substrate; and forming a tantalum oxide layer on the first electrode by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and R 1 and R 2 are independently alkyl; and forming a second electrode on the tantalum oxide layer.
Claim 2
Independent Claim
79 words
A method of making a semiconductor capacitor comprising: forming a first electrode on a semiconductor substrate; and forming a tantalum oxide layer on the first electrode by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and R 1 and R 2 are independently alkyl; and forming a second electrode on the tantalum oxide layer.
Claim 3
Dependent Claim
39 words
The method according to claim 1 , wherein said step of forming a tantalum oxide layer on the first electrode comprises injecting the at least one precursor, the ozone gas and a purge gas on the first electrode sequentially.
Claim 4
Dependent Claim
52 words
The method according to claim 1 , further comprising the step of forming a tantalum preprocessed layer on the surface of the first electrode by depositing at least one tantalum precursor including oxygen bond by chemical vapor deposition prior to said step of forming a tantalum oxide layer on the first electrode.
Claim 5
Dependent Claim
33 words
The method according to claim 3 , wherein the at least one tantalum precursor is selected from the group consisting of Ta(OC 2 H 5 ) 5 and Ta(OCH 3 ) 5 .
Claim 6
Dependent Claim
22 words
The method according to claim 1 , wherein the first electrode comprises polysilicon, a noble metal, a metal nitride, and combinations thereof.
Claim 7
Dependent Claim
24 words
The method according to claim 5 , wherein the noble metal is selected from the group consisting of Ru, Ir, Pt, and combinations thereof.
Claim 8
Dependent Claim
24 words
The method according to claim 5 , wherein the metal nitride is selected from the group consisting of TiN, TaN, WN, and combinations thereof.
Claim 9
Dependent Claim
17 words
The method according to claim 1 , wherein the purge gas is argon, nitrogen, or mixtures thereof.
Claim 10
Dependent Claim
20 words
The method according to claim 1 , wherein R 1 and R 2 are each methyl and X is nitrogen.
Claim 11
Dependent Claim
21 words
The method according to claim 1 , wherein R 1 and R 2 are independently C 1 to C 4 alkyl.
Claim 12
Dependent Claim
34 words
The method according to claim 1 , wherein said step of depositing the at least one precursor on the first electrode occurs at a temperature ranging from about 100° C. to about 600° C.
Claim 13
Dependent Claim
15 words
The method according to claim 1 , further comprising uniformly depositing the tatalum oxide layer.
Claim 14
Independent Claim
80 words
A method of making a semiconductor capacitor comprising: forming a first electrode on a semiconductor substrate; uniformly forming a tantalum oxide layer on the first electrode by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and R 1 and R 2 are independently alkyl; and forming a second electrode on the uniform tantalum oxide layer.
Claim 15
Independent Claim
80 words
A method of making a semiconductor capacitor comprising: forming a first electrode on a semiconductor substrate; uniformly forming a tantalum oxide layer on the first electrode by depositing at least one precursor and ozone gas, the at least one precursor represented by the formula: wherein X is selected from the group consisting of nitrogen, sulfur, oxygen, and a carbonyl group; and R 1 and R 2 are independently alkyl; and forming a second electrode on the uniform tantalum oxide layer.
Claim 16
Dependent Claim
39 words
The method according to claim 13 , wherein said step of forming a tantalum oxide layer on the first electrode comprises injecting the at least one precursor, the ozone gas and a purge gas on the first electrode sequentially.
Claim 17
Dependent Claim
52 words
The method according to claim 13 , further comprising the step of forming a tantalum preprocessed layer on the surface of the first electrode by depositing at least one tantalum precursor including oxygen bond by chemical vapor deposition prior to said step of forming a tantalum oxide layer on the first electrode.
Claim 18
Dependent Claim
33 words
The method according to claim 15 , wherein the at least one tantalum precursor is selected from the group consisting of Ta(OC 2 H 5 ) 5 and Ta(OCH 3 ) 5 .
Claim 19
Dependent Claim
22 words
The method according to claim 13 , wherein the first electrode comprises polysilicon, a noble metal, a metal nitride, and combinations thereof.
Claim 20
Dependent Claim
24 words
The method according to claim 17 , wherein the noble metal is selected from the group consisting of Ru, Ir, Pt, and combinations thereof.
Claim 21
Dependent Claim
24 words
The method according to claim 17 , wherein the metal nitride is selected from the group consisting of TiN, TaN, WN, and combinations thereof.
Claim 22
Dependent Claim
17 words
The method according to claim 13 , wherein the purge gas is argon, nitrogen, or mixtures thereof.
Claim 23
Dependent Claim
20 words
The method according to claim 13 , wherein R 1 and R 2 are each methyl and X is nitrogen.
Claim 24
Dependent Claim
21 words
The method according to claim 13 , wherein R 1 and R 2 are independently C 1 to C 4 alkyl.
Claim 25
Dependent Claim
34 words
The method according to claim 13 , wherein said step of depositing the at least one precursor on the first electrode occurs at a temperature ranging from about 100° C. to about 600° C.
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