Patent US7271077B2 successfully refreshed from Google Patents.
US7271077B2
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Deposition methods with time spaced and time abutting precursor pulses
Assignee: Micron Technology Inc
•
Filing: 2003-12-12
•
Granted: 2007-09-18
•
Expires: 2023-12-12
Abstract
Abstract An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substrate. The first precursor gas flowing comprises a plurality of first precursor gas pulses. The plurality of first precursor gas pulses comprises at least one total period of time between two immediately adjacent first precursor gas pulses when no gas is fed to the chamber. After forming the first monolayer on the substrate, a second precursor gas different in composition from the first is flowed to the substrate within the deposition chamber effective to form a second monolayer on the first monolayer. Other aspects and implementations are contemplated.
Inventors
- 👤 Eugene Marsh
- 👤 Brian Vaartstra
- 👤 Paul J. Castrovillo
- 👤 Cem Basceri
- 👤 Garo J. Derderian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:53
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527
Claims Analysis
Total Claims: 72
Claim 1
Independent Claim
171 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas, said multiple time spaced inert purge gas pulses being characterized by a period of time between two adjacent of the multiple time spaced inert purge gas pulses which is void of flowing the first precursor gas and the second precursor gas to the chamber.
Claim 2
Dependent Claim
171 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas, said multiple time spaced inert purge gas pulses being characterized by a period of time between two adjacent of the multiple time spaced inert purge gas pulses which is void of flowing the first precursor gas and the second precursor gas to the chamber.
Claim 3
Dependent Claim
10 words
The method of claim 1 wherein the plurality is two.
Claim 4
Dependent Claim
27 words
The method of claim 1 comprising flowing at least one inert purge gas pulse to the substrate within the chamber immediately prior to the first precursor flowing.
Claim 5
Dependent Claim
20 words
The method of claim 1 wherein the first precursor comprises TiCl 4 and the second precursor comprises NH 3 .
Claim 6
Dependent Claim
20 words
The method of claim 1 wherein the first precursor comprises NH 3 and the second precursor comprises TiCl 4 .
Claim 7
Dependent Claim
17 words
The method of claim 1 wherein the first precursor comprises trimethylaluminum and the second precursor comprises ozone.
Claim 8
Dependent Claim
17 words
The method of claim 1 wherein the first precursor comprises ozone and the second precursor comprises trimethylaluminum.
Claim 9
Dependent Claim
31 words
The method of claim 1 wherein the period of time is less than time of gas flow of either of two immediately adjacent of the plurality of first precursor gas pulses.
Claim 10
Dependent Claim
31 words
The method of claim 1 wherein the period of time is greater than time of gas flow of each of two immediately adjacent of the plurality of first precursor gas pulses.
Claim 11
Dependent Claim
33 words
The method of claim 1 wherein the period of time is greater than time of gas flow of both of two immediately adjacent of the plurality of first precursor gas pulses in combination.
Claim 12
Dependent Claim
21 words
The method of claim 1 wherein two immediately adjacent of the plurality of first precursor gas pulses are equal in time.
Claim 13
Dependent Claim
22 words
The method of claim 1 wherein two immediately adjacent of the plurality of first precursor gas pulses are not equal in time.
Claim 14
Dependent Claim
37 words
The method of claim 1 wherein two immediately adjacent of the plurality of first precursor gas pulses are equal in time, the period of time being equal to the time of each of the immediately adjacent pulses.
Claim 15
Dependent Claim
26 words
The method of claim 1 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
Claim 16
Dependent Claim
43 words
The method of claim 1 wherein said period of time between the two adjacent of the multiple time spaced inert gas pulses is characterized by no gas flow to the chamber between two adjacent of said multiple time spaced inert purge gas pulses.
Claim 17
Dependent Claim
139 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber, the plurality being more than two during formation of the first monolayer; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas.
Claim 18
Dependent Claim
139 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber, the plurality being more than two during formation of the first monolayer; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas.
Claim 19
Dependent Claim
123 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber to form a third monolayer on the substrate, the third precursor being different in composition from the first precursor.
Claim 20
Dependent Claim
123 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber to form a third monolayer on the substrate, the third precursor being different in composition from the first precursor.
Claim 21
Dependent Claim
27 words
The method of claim 17 comprising at least one period of time between two adjacent second precursor gas pulses when no gas is fed to the chamber.
Claim 22
Dependent Claim
27 words
The method of claim 17 comprising at least one period of time between two adjacent second precursor gas pulses when some gas is fed to the chamber.
Claim 23
Dependent Claim
36 words
The method of claim 17 comprising at least one period of time between two adjacent second precursor gas pulses within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 24
Dependent Claim
10 words
The method of claim 17 wherein the plurality is two.
Claim 25
Dependent Claim
12 words
The method of claim 17 wherein the plurality is more than two.
Claim 26
Dependent Claim
27 words
The method of claim 17 wherein the plurality is two, and comprising a period of time between said two when no gas is fed to the chamber.
Claim 27
Dependent Claim
27 words
The method of claim 17 wherein the plurality is two, and comprising a period of time between said two when some gas is fed to the chamber.
Claim 28
Dependent Claim
36 words
The method of claim 17 wherein the plurality is two, and comprising a period of time between said two within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 29
Dependent Claim
30 words
The method of claim 17 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 30
Dependent Claim
31 words
The method of claim 17 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 31
Dependent Claim
26 words
The method of claim 17 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
Claim 32
Dependent Claim
122 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising at least two time abutting second precursor gas pulses which are characterized by different second precursor flow rates; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber effective to form a third monolayer on the substrate.
Claim 33
Dependent Claim
122 words
A deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising at least two time abutting second precursor gas pulses which are characterized by different second precursor flow rates; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber effective to form a third monolayer on the substrate.
Claim 34
Dependent Claim
18 words
The method of claim 29 wherein said two time abutting second precursor gas pulses are equal in time.
Claim 35
Dependent Claim
44 words
The method of claim 29 wherein a first in time of said two time abutting second precursor gas pulses is greater in flow time than that of a second in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 36
Dependent Claim
44 words
The method of claim 29 wherein a second in time of said two time abutting second precursor gas pulses is greater in flow time than that of a first in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 37
Dependent Claim
30 words
The method of claim 29 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 38
Dependent Claim
31 words
The method of claim 29 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 39
Dependent Claim
18 words
The method of claim 29 wherein the third precursor is the same in composition as the first precursor.
Claim 40
Dependent Claim
17 words
The method of claim 29 wherein the third precursor is different in composition from the first precursor.
Claim 41
Dependent Claim
26 words
The method of claim 29 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
Claim 42
Dependent Claim
181 words
An atomic layer deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber to form a first layer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas, said multiple time spaced inert purge gas pulses being characterized by a period of time between two adjacent of the multiple time spaced inert purge gas pulses which is void of flowing the first precursor gas and the second precursor gas to the chamber.
Claim 43
Dependent Claim
181 words
An atomic layer deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber to form a first layer on the substrate, said first precursor gas flowing comprising a plurality of first precursor gas pulses, at least two of the plurality of first precursor gas pulses separated by a period of time when no gas is fed to the chamber; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer; and flowing multiple time spaced inert purge gas pulses within the deposition chamber intermediate the flowing of the first precursor gas and the second precursor gas, said multiple time spaced inert purge gas pulses being characterized by a period of time between two adjacent of the multiple time spaced inert purge gas pulses which is void of flowing the first precursor gas and the second precursor gas to the chamber.
Claim 44
Dependent Claim
43 words
The method of claim 38 wherein said period of time between the two adjacent of the multiple time spaced inert gas pulses is characterized by no gas flow to the chamber between two adjacent of said multiple time spaced inert purge gas pulses.
Claim 45
Dependent Claim
139 words
An atomic layer deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber to form a first layer on the substrate; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer, said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses; and after forming the second layer on the substrate, flowing a third precursor gas different in composition from the second precursor gas to proximate the substrate within the deposition chamber to form a third layer on the substrate, the third precursor gas being different in composition from the first precursor gas.
Claim 46
Dependent Claim
139 words
An atomic layer deposition method comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber to form a first layer on the substrate; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer, said second precursor gas flowing comprising a plurality of time spaced second precursor gas pulses; and after forming the second layer on the substrate, flowing a third precursor gas different in composition from the second precursor gas to proximate the substrate within the deposition chamber to form a third layer on the substrate, the third precursor gas being different in composition from the first precursor gas.
Claim 47
Dependent Claim
27 words
The method of claim 40 comprising at least one period of time between two adjacent second precursor gas pulses when no gas is fed to the chamber.
Claim 48
Dependent Claim
27 words
The method of claim 40 comprising at least one period of time between two adjacent second precursor gas pulses when some gas is fed to the chamber.
Claim 49
Dependent Claim
36 words
The method of claim 40 comprising at least one period of time between two adjacent second precursor gas pulses within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 50
Dependent Claim
10 words
The method of claim 40 wherein the plurality is two.
Claim 51
Dependent Claim
12 words
The method of claim 40 wherein the plurality is more than two.
Claim 52
Dependent Claim
27 words
The method of claim 40 wherein the plurality is two, and comprising a period of time between said two when no gas is fed to the chamber.
Claim 53
Dependent Claim
27 words
The method of claim 40 wherein the plurality is two, and comprising a period of time between said two when some gas is fed to the chamber.
Claim 54
Dependent Claim
36 words
The method of claim 40 wherein the plurality is two, and comprising a period of time between said two within which at least one inert purge gas pulse is fed to the substrate within the chamber.
Claim 55
Dependent Claim
30 words
The method of claim 40 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 56
Dependent Claim
31 words
The method of claim 40 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 57
Dependent Claim
137 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber effective to form a first layer on the substrate; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer, said second precursor gas flowing comprising at least two time abutting second precursor gas pulses which are characterized by different second precursor flow rates; and after forming the second layer on the substrate, flowing a third precursor gas different in composition from the second precursor gas to proximate the substrate within the deposition chamber effective to form a third layer on the substrate.
Claim 58
Dependent Claim
137 words
An atomic layer deposition method, comprising: positioning a semiconductor substrate within a deposition chamber; flowing a first precursor gas to proximate the substrate within the deposition chamber effective to form a first layer on the substrate; after forming the first layer on the substrate, flowing a second precursor gas different in composition from the first precursor gas to proximate the substrate within the deposition chamber to form a second layer on the first layer, said second precursor gas flowing comprising at least two time abutting second precursor gas pulses which are characterized by different second precursor flow rates; and after forming the second layer on the substrate, flowing a third precursor gas different in composition from the second precursor gas to proximate the substrate within the deposition chamber effective to form a third layer on the substrate.
Claim 59
Dependent Claim
18 words
The method of claim 51 wherein said two time abutting second precursor gas pulses are equal in time.
Claim 60
Dependent Claim
44 words
The method of claim 51 wherein a first in time of said two time abutting second precursor gas pulses is greater in flow time than that of a second in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 61
Dependent Claim
44 words
The method of claim 51 wherein a second in time of said two time abutting second precursor gas pulses is greater in flow time than that of a first in time of an immediately adjacent of said two time abutting second precursor gas pulses.
Claim 62
Dependent Claim
30 words
The method of claim 51 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 63
Dependent Claim
31 words
The method of claim 51 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 64
Dependent Claim
18 words
The method of claim 51 wherein the third precursor is the same in composition as the first precursor.
Claim 65
Dependent Claim
17 words
The method of claim 51 wherein the third precursor is different in composition from the first precursor.
Claim 66
Dependent Claim
122 words
A deposition method comprising: positioning a substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising a volumetric gas flow rate which varies across a duration of second precursor gas flowing within the deposition chamber; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber effective to form a third monolayer on the substrate.
Claim 67
Dependent Claim
122 words
A deposition method comprising: positioning a substrate within a deposition chamber; flowing a first precursor gas within the deposition chamber to form a first monolayer on the substrate; after forming the first monolayer on the substrate, flowing a second precursor gas different in composition from the first precursor gas within the deposition chamber to form a second monolayer on the first monolayer, said second precursor gas flowing comprising a volumetric gas flow rate which varies across a duration of second precursor gas flowing within the deposition chamber; and after forming the second monolayer on the substrate, flowing a third precursor gas different in composition from the second precursor gas within the deposition chamber effective to form a third monolayer on the substrate.
Claim 68
Dependent Claim
30 words
The method of claim 59 comprising flowing at least one inert purge gas pulse to the substrate within the chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 69
Dependent Claim
31 words
The method of claim 59 comprising flowing multiple time spaced inert purge gas pulses to the substrate within the deposition chamber intermediate the first precursor flowing and the third precursor flowing.
Claim 70
Dependent Claim
18 words
The method of claim 59 wherein the third precursor is the same in composition as the first precursor.
Claim 71
Dependent Claim
17 words
The method of claim 59 wherein the third precursor is different in composition from the first precursor.
Claim 72
Dependent Claim
26 words
The method of claim 59 wherein the second monolayer is formed over an area of the substrate, the second monolayer being continuously formed over the area.
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