US6613587B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of replacing at least a portion of a semiconductor substrate deposition chamber liner
Assignee: Micron Technology Inc
•
Filing: 2002-04-11
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Granted: 2003-09-02
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Expires: 2022-04-11
Abstract
Abstract A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A replacement for the removed deposition chamber liner piece is provided into the chamber by passing the replacement through said passageway. A liner apparatus includes a plurality of pieces which when assembled within a selected semiconductor substrate deposition processor chamber are configured to restrict at least a majority portion of all internal wall surfaces which define said semiconductor substrate deposition processor chamber from exposure to deposition material within the chamber. At least some of the pieces are sized for passing completely through a substrates passageway to the chamber through which semiconductor substrates pass into and out of the chamber for deposition processing.
Inventors
- 👤 Craig M. Carpenter
- 👤 Ross S. Dando
- 👤 Philip H. Campbell
- 👤 Allen P. Mardian
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/54; C23C16/4401
Claims Analysis
Total Claims: 32
Claim 1
Independent Claim
89 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway through which semiconductor substrates pass into and out of the chamber for deposition processing.
Claim 2
Independent Claim
89 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway through which semiconductor substrates pass into and out of the chamber for deposition processing.
Claim 3
Dependent Claim
27 words
The method of claim 1 wherein the deposition chamber is maintained at subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 4
Dependent Claim
30 words
The method of claim 1 wherein the deposition chamber is maintained at a substantially constant subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 5
Dependent Claim
12 words
The method of claim 1 wherein the chamber liner piece is annular.
Claim 6
Dependent Claim
26 words
The method of claim 1 wherein the deposition chamber liner is comprised of multiple pieces, and comprising removing and replacing all said pieces through said passageway.
Claim 7
Dependent Claim
28 words
The method of claim 1 wherein the passageway includes a maximum height of no greater than 0.75 inch and a maximum width of no greater than 8.25 inches.
Claim 8
Dependent Claim
26 words
The method of claim 1 wherein the passageway includes a maximum height of greater than 0.75 inch and a maximum width of greater than 8.25 inches.
Claim 9
Independent Claim
116 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: engaging a piece of a deposition chamber liner with a semiconductor substrate holder within a deposition chamber; moving the engaged chamber liner piece with the semiconductor substrate holder to proximate a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; removing the chamber liner piece from the deposition chamber by passing it through the passageway; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway through which semiconductor substrates pass into and out of the chamber for deposition processing.
Claim 10
Independent Claim
116 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: engaging a piece of a deposition chamber liner with a semiconductor substrate holder within a deposition chamber; moving the engaged chamber liner piece with the semiconductor substrate holder to proximate a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; removing the chamber liner piece from the deposition chamber by passing it through the passageway; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway through which semiconductor substrates pass into and out of the chamber for deposition processing.
Claim 11
Dependent Claim
34 words
The method of claim 8 wherein the removing comprises engaging the chamber liner piece with an arm extending through the passageway, and by passing the chamber liner piece through the passageway with the arm.
Claim 12
Dependent Claim
12 words
The method of claim 8 wherein the chamber liner piece is annular.
Claim 13
Dependent Claim
27 words
The method of claim 8 wherein the deposition chamber is maintained at subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 14
Dependent Claim
30 words
The method of claim 8 wherein the deposition chamber is maintained at a substantially constant subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 15
Dependent Claim
26 words
The method of claim 8 wherein the deposition chamber liner is comprised of multiple pieces, and comprising removing and replacing all said pieces through said passageway.
Claim 16
Independent Claim
107 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: engaging a piece of a deposition chamber liner with an arm extending through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; moving the engaged chamber liner piece with the arm to proximate said passageway; removing the chamber liner piece from the deposition chamber with the arm by passing the chamber liner piece through the passageway; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway with the arm.
Claim 17
Independent Claim
107 words
A method of replacing at least a portion of a semiconductor substrate deposition chamber liner comprising: engaging a piece of a deposition chamber liner with an arm extending through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing; moving the engaged chamber liner piece with the arm to proximate said passageway; removing the chamber liner piece from the deposition chamber with the arm by passing the chamber liner piece through the passageway; and providing a replacement for the removed deposition chamber liner piece into the chamber by passing the replacement through said passageway with the arm.
Claim 18
Dependent Claim
37 words
The method of claim 14 wherein the engaging displaces the chamber liner piece from a lining position within the chamber in which the chamber liner piece is received when semiconductor substrates are deposited upon within the chamber.
Claim 19
Dependent Claim
49 words
The method of claim 14 comprising prior to the engaging, displacing the chamber liner piece from a lining position within the chamber in which the chamber liner piece is received when semiconductor substrates are deposited upon within the chamber with something other than an arm extending through the passageway.
Claim 20
Dependent Claim
31 words
The method of claim 14 wherein the passing is in a first direction, the moving including movement of the chamber liner piece in a second direction generally transverse the first direction.
Claim 21
Dependent Claim
36 words
The method of claim 14 comprising after the providing, moving the replacement into a lining position within the chamber in which the chamber liner piece was received when semiconductor substrates are deposited upon within the chamber.
Claim 22
Dependent Claim
27 words
The method of claim 14 wherein the deposition chamber is maintained at subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 23
Dependent Claim
30 words
The method of claim 14 wherein the deposition chamber is maintained at a substantially constant subatmospheric pressure during the removing and the providing, and between the removing and the providing.
Claim 24
Dependent Claim
29 words
The method of claim 14 wherein the deposition chamber liner is comprised of multiple pieces, and comprising removing and replacing all said pieces through said passageway with the arm.
Claim 25
Independent Claim
203 words
A method of depositing materials over a plurality of semiconductor substrates, comprising: providing a subatmospheric deposition chamber in communication with a subatmospheric transfer chamber; processing a first plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit one or more materials over said first plurality, said first plurality of substrates passing from the subatmospheric transfer chamber to the subatmospheric deposition chamber and then from the subatmospheric deposition chamber to the subatmospheric transfer chamber through a substrate passageway therebetween; after processing the first plurality of substrates, removing at least a piece of a chamber liner received within the subatmospheric deposition chamber by passing it through the substrate passageway into the transfer chamber; providing a replacement for the removed deposition chamber liner piece into the subatmospheric deposition chamber by passing the replacement from the subatmospheric transfer chamber through the substrate passageway into the subatmospheric deposition chamber; and processing a second plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit said one or more materials over said second plurality; all of said first plurality processing, said removing, said providing a replacement and said second plurality processing occurring without exposing either the transfer chamber or the deposition chamber to room atmospheric pressure.
Claim 26
Independent Claim
203 words
A method of depositing materials over a plurality of semiconductor substrates, comprising: providing a subatmospheric deposition chamber in communication with a subatmospheric transfer chamber; processing a first plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit one or more materials over said first plurality, said first plurality of substrates passing from the subatmospheric transfer chamber to the subatmospheric deposition chamber and then from the subatmospheric deposition chamber to the subatmospheric transfer chamber through a substrate passageway therebetween; after processing the first plurality of substrates, removing at least a piece of a chamber liner received within the subatmospheric deposition chamber by passing it through the substrate passageway into the transfer chamber; providing a replacement for the removed deposition chamber liner piece into the subatmospheric deposition chamber by passing the replacement from the subatmospheric transfer chamber through the substrate passageway into the subatmospheric deposition chamber; and processing a second plurality of semiconductor substrates within the subatmospheric deposition chamber effective to deposit said one or more materials over said second plurality; all of said first plurality processing, said removing, said providing a replacement and said second plurality processing occurring without exposing either the transfer chamber or the deposition chamber to room atmospheric pressure.
Claim 27
Dependent Claim
18 words
The method of claim 22 wherein the first and second plurality processings are one substrate at a time.
Claim 28
Dependent Claim
20 words
The method of claim 22 wherein the deposition chamber is maintained at a substantially constant subatmospheric pressure during said all.
Claim 29
Dependent Claim
12 words
The method of claim 22 wherein the chamber liner piece is annular.
Claim 30
Dependent Claim
36 words
The method of claim 22 wherein the deposition chamber liner is comprised of multiple pieces, and comprising removing and replacing all said pieces through said passageway intermediate the first plurality processing and the second plurality processing.
Claim 31
Dependent Claim
27 words
The method of claim 22 wherein the passageway includes a maximum height of no greater 0.75 inch and a maximum width of no greater than 8.25 inches.
Claim 32
Dependent Claim
26 words
The method of claim 22 wherein the passageway includes a maximum height of greater than 0.75 inch and a maximum width of greater than 8.25 inches.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-09-01 | 2007-03-03 | 2007-09-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-09-01 | 2011-03-03 | 2011-09-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-09-01 | 2015-03-03 | 2015-09-02 | $7700.00 | Window Closed / Lapsed |