US6746952B2
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Diffusion barrier layer for semiconductor wafer fabrication
Assignee: Micron Technology Inc
•
Filing: 2001-08-29
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Granted: 2004-06-08
•
Expires: 2021-08-29
Abstract
Abstract Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl 4 -based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSi x , an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.
Inventors
- 👤 Ammar Derraa
- 👤 Sujit Sharan
- 👤 Paul Castrovillo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/40
Claims Analysis
Total Claims: 96
Claim 1
Independent Claim
33 words
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of: forming the diffusion barrier layer by depositing titanium boronitride over and in contact with a semiconductive substrate.
Claim 2
Independent Claim
33 words
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of: forming the diffusion barrier layer by depositing titanium boronitride over and in contact with a semiconductive substrate.
Claim 3
Dependent Claim
22 words
The method of claim 1 , wherein the diffusion barrier layer is formed onto an active device area within the semiconductive substrate.
Claim 4
Dependent Claim
15 words
The method of claim 2 , wherein the active device area comprises a shallow junction.
Claim 5
Dependent Claim
16 words
The method of claim 2 , wherein the active device area comprises a source or drain.
Claim 6
Dependent Claim
12 words
The method of claim 1 , wherein the semiconductive substrate comprises silicon.
Claim 7
Dependent Claim
29 words
The method of claim 1 , wherein the step of forming the diffusion barrier layer comprises chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane.
Claim 8
Dependent Claim
44 words
The method of claim 6 , wherein the step of forming the diffusion barrier layer by chemical vapor deposition comprises flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane.
Claim 9
Dependent Claim
34 words
The method of claim 6 , wherein the gaseous mixture comprises the diborane in an amount effective to provide the diffusion barrier layer with a level of boron for adherence to the semiconductive substrate.
Claim 10
Dependent Claim
22 words
The method of claim 6 , wherein the diffusion barrier layer is formed over a conductively doped diffusion region in the substrate.
Claim 11
Dependent Claim
29 words
The method of claim 6 , wherein the step of forming the diffusion layer by chemical vapor deposition is at a temperature of about 550 to about 700° C.
Claim 12
Dependent Claim
27 words
The method of claim 6 , wherein the gaseous mixture further comprises a carrier gas selected from the group consisting of helium, nitrogen, argon, and mixtures thereof.
Claim 13
Dependent Claim
23 words
The method of claim 1 , wherein the diffusion barrier layer is formed to a thickness of about 100 to about 500 angstroms.
Claim 14
Dependent Claim
39 words
The method of claim 1 , wherein the semiconductor device comprises a contact opening formed in an insulative layer and extending to the semiconductive substrate, and the diffusion barrier is formed over the semiconductive substrate within the contact opening.
Claim 15
Dependent Claim
22 words
The method of claim 13 , further comprising depositing a fill material onto the diffusion barrier layer to fill the contact opening.
Claim 16
Dependent Claim
27 words
The method of claim 14 , wherein the fill material comprises a conductive material selected from the group consisting of polysilicon, tungsten, aluminum, titanium, and titanium nitride.
Claim 17
Dependent Claim
28 words
The method of claim 14 , wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the semiconductive substrate and to the fill material.
Claim 18
Independent Claim
69 words
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of: forming a diffusion barrier layer over and in contact with a semiconductive substrate by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane, the gaseous mixture comprising the diborane in an amount effective to provide the diffusion barrier layer with an amount of boron for adherence to the substrate.
Claim 19
Independent Claim
69 words
A method of forming a diffusion barrier layer in a semiconductor device, comprising the step of: forming a diffusion barrier layer over and in contact with a semiconductive substrate by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane, the gaseous mixture comprising the diborane in an amount effective to provide the diffusion barrier layer with an amount of boron for adherence to the substrate.
Claim 20
Dependent Claim
65 words
The method of claim 17 , wherein the step of forming the diffusion barrier layer comprises depositing the gaseous mixture onto a conductively doped diffusion region within the semiconductive substrate, and the gaseous mixture comprises the ammonia in an amount effective to provide the diffusion barrier layer with an amount of nitrogen for a predetermined level of conductivity for electrical contact with the conductive area.
Claim 21
Dependent Claim
14 words
The method of claim 18 , wherein the diffusion region comprises a shallow junction.
Claim 22
Dependent Claim
15 words
The method of claim 18 , wherein the diffusion area comprises a source or drain.
Claim 23
Dependent Claim
30 words
The method of claim 18 , wherein the diffusion barrier layer is formed over the conductive area within a contact opening formed in an insulative layer of the semiconductor device.
Claim 24
Dependent Claim
40 words
The method of claim 21 , further comprising depositing a conductive fill material onto the diffusion barrier layer to fill the contact opening, wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the fill material.
Claim 25
Dependent Claim
23 words
The method of claim 17 , wherein the diffusion barrier layer is formed to a thickness of about 100 to about 500 angstroms.
Claim 26
Independent Claim
37 words
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer.
Claim 27
Independent Claim
37 words
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer.
Claim 28
Dependent Claim
30 words
The method of claim 24 , wherein the step of depositing the titanium boronitride material comprises thermal chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane.
Claim 29
Dependent Claim
34 words
The method of claim 25 , wherein the gaseous mixture comprises the diborane in an amount effective to provide the diffusion barrier layer with an amount of boron for adherence to the semiconductive substrate.
Claim 30
Independent Claim
87 words
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer, the conductive area and the diffusion barrier layer defining a contact interface therebetween; wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the conductive area, and an amount of nitrogen effective to maintain an effective level of conductivity for electrical contact with the conductive area.
Claim 31
Independent Claim
87 words
A method of forming a diffusion barrier layer on a conductive area within a semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the conductive area to form the diffusion barrier layer, the conductive area and the diffusion barrier layer defining a contact interface therebetween; wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the conductive area, and an amount of nitrogen effective to maintain an effective level of conductivity for electrical contact with the conductive area.
Claim 32
Independent Claim
30 words
A method of forming a diffusion barrier layer in a semiconductor device comprising the step of: depositing a layer comprising titanium boronitride over and in contact with a silicon substrate.
Claim 33
Independent Claim
30 words
A method of forming a diffusion barrier layer in a semiconductor device comprising the step of: depositing a layer comprising titanium boronitride over and in contact with a silicon substrate.
Claim 34
Dependent Claim
48 words
The method of claim 28 , wherein the step of depositing the titanium boronitride comprises chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane in amounts effective to provide the diffusion barrier layer with a level of boron for adherence to the silicon substrate.
Claim 35
Dependent Claim
59 words
The methods of claim 28 , wherein the diffusion barrier layer is formed over a conductively doped diffusion area within the silicon substrate, and the gaseous mixture comprises the ammonia in an amount effective to provide the diffusion barrier layer with an amount of nitrogen to maintain an effective level of conductivity for electrical contact with the diffusion area.
Claim 36
Independent Claim
36 words
A method of forming a diffusion barrier layer on a semiconductor device, comprising the step of: depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane onto a silicon substrate to form the diffusion barrier layer.
Claim 37
Independent Claim
36 words
A method of forming a diffusion barrier layer on a semiconductor device, comprising the step of: depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane onto a silicon substrate to form the diffusion barrier layer.
Claim 38
Independent Claim
52 words
A method of forming a diffusion barrier layer in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon substrate, the method comprising the step of: depositing titanium boronitride over and in contact with the silicon substrate to form the diffusion barrier layer.
Claim 39
Independent Claim
52 words
A method of forming a diffusion barrier layer in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon substrate, the method comprising the step of: depositing titanium boronitride over and in contact with the silicon substrate to form the diffusion barrier layer.
Claim 40
Dependent Claim
30 words
The method of claim 32 , wherein the step of forming the diffusion barrier layer comprises thermal chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane.
Claim 41
Independent Claim
59 words
A method of forming a diffusion barrier layer over a substrate, comprising the steps of: positioning the substrate within a chemical vapor deposition reactor; and flowing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride on an outer surface of the substrate, the outer surface comprising a silicon material.
Claim 42
Independent Claim
59 words
A method of forming a diffusion barrier layer over a substrate, comprising the steps of: positioning the substrate within a chemical vapor deposition reactor; and flowing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride on an outer surface of the substrate, the outer surface comprising a silicon material.
Claim 43
Independent Claim
102 words
A method of forming a diffusion barrier layer over a substrate relative to a contact opening, comprising the steps of: positioning the substrate within a chemical vapor deposition reactor; the substrate comprising a semiconductor substrate having a conductively doped diffusion region formed therein, an insulating dielectric layer overlying the diffusion region, and a contact opening formed into the insulating dielectric layer to the substrate diffusion region; and providing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride within the contact opening over the substrate diffusion region to form the diffusion barrier layer.
Claim 44
Independent Claim
102 words
A method of forming a diffusion barrier layer over a substrate relative to a contact opening, comprising the steps of: positioning the substrate within a chemical vapor deposition reactor; the substrate comprising a semiconductor substrate having a conductively doped diffusion region formed therein, an insulating dielectric layer overlying the diffusion region, and a contact opening formed into the insulating dielectric layer to the substrate diffusion region; and providing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane within the reactor to deposit a layer of titanium boronitride within the contact opening over the substrate diffusion region to form the diffusion barrier layer.
Claim 45
Dependent Claim
26 words
The method of claim 35 , further comprising the step of: forming a conductive fill over the titanium boronitride layer to substantially fill the contact opening.
Claim 46
Independent Claim
64 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the steps of: forming a conductive diffusion barrier layer comprising titanium boronitride over and in contact with the substrate; and depositing a conductive material onto the diffusion barrier layer to fill the opening.
Claim 47
Independent Claim
64 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the steps of: forming a conductive diffusion barrier layer comprising titanium boronitride over and in contact with the substrate; and depositing a conductive material onto the diffusion barrier layer to fill the opening.
Claim 48
Dependent Claim
33 words
The method of claim 37 , wherein the step of forming the diffusion barrier layer comprises depositing a gaseous mixture of titanium tetrachloride, ammonia, and diborane onto the substrate by chemical vapor deposition.
Claim 49
Dependent Claim
32 words
The method of claim 38 , wherein the gaseous mixture comprises the diborane in an amount effective to adhere the diffusion barrier layer to the semiconductive substrate and to the conductive material.
Claim 50
Dependent Claim
60 words
The method of claim 38 , wherein the diffusion barrier layer is formed over an active device area within the silicon substrate, and the gaseous mixture comprises the ammonia in an amount effective to provide the diffusion barrier layer with an amount of nitrogen effective to maintain a predetermined level of conductivity for electrical contact with the active device area.
Claim 51
Dependent Claim
17 words
The method of claim 40 , wherein the active device area comprises a conductively doped diffusion region.
Claim 52
Dependent Claim
15 words
The method of claim 41 , wherein the active device area comprises a shallow junction.
Claim 53
Dependent Claim
23 words
The method of claim 37 , wherein the diffusion barrier layer is formed to a thickness of about 100 to about 500 angstroms.
Claim 54
Dependent Claim
24 words
The method of claim 37 , wherein the conductive material is selected from the group consisting of polysilicon, tungsten, aluminum, titanium, and titanium nitride.
Claim 55
Dependent Claim
12 words
The method of claim 37 , wherein the conductive material is polysilicon.
Claim 56
Dependent Claim
35 words
The method of claim 37 , further comprising, after the step of depositing the conductive material, the step of removing an excess portion of the conductive material to form the conductive contact in the opening.
Claim 57
Dependent Claim
17 words
The method of claim 46 , wherein the step of removing the conductive material comprises chemical-mechanical polishing.
Claim 58
Independent Claim
75 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the semiconductive substrate from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form a conductive diffusion barrier layer; and depositing a conductive fill material onto the diffusion barrier layer to fill the opening.
Claim 59
Independent Claim
75 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying semiconductive substrate, the method comprising the step of: depositing a titanium boronitride material onto the semiconductive substrate from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form a conductive diffusion barrier layer; and depositing a conductive fill material onto the diffusion barrier layer to fill the opening.
Claim 60
Dependent Claim
24 words
The method of claim 48 , wherein the diffusion barrier layer is received over and in contact with a conductive area in the substrate.
Claim 61
Dependent Claim
65 words
The method of claim 49 , wherein the step of depositing the titanium boronitride material comprises flowing the ammonia and diborane in amounts effective to provide a sufficient level of adhesion of the diffusion barrier layer to the substrate and the overlying fill material, and a sufficient level of conductivity for electrical contact between the conductive fill material and the conductive area in the substrate.
Claim 62
Dependent Claim
14 words
The method of claim 49 , wherein the conductive area comprises a shallow junction.
Claim 63
Independent Claim
88 words
A method of forming a contact structure in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the step of: flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate to form a diffusion barrier layer over and in contact with the substrate; and depositing a fill material over the diffusion barrier layer to fill the opening.
Claim 64
Independent Claim
88 words
A method of forming a contact structure in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the step of: flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate to form a diffusion barrier layer over and in contact with the substrate; and depositing a fill material over the diffusion barrier layer to fill the opening.
Claim 65
Dependent Claim
26 words
The method of claim 52 , wherein the diffusion barrier layer comprises an amount of boron effective to adhere to the substrate and the fill material.
Claim 66
Dependent Claim
38 words
The method of claim 52 , wherein the diffusion barrier layer comprises an amount of nitrogen effective to maintain a sufficient level of conductivity for electrical contact between the conductive fill and the conductive area in the substrate.
Claim 67
Dependent Claim
14 words
The method of claim 52 , wherein the fill material is a conductive material.
Claim 68
Independent Claim
129 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to a conductive area in an underlying silicon-comprising substrate, the method comprising the steps of: depositing a conductive diffusion barrier layer comprising titanium boronitride over the substrate within the opening by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; and filling the opening with a conductive material deposited onto the diffusion barrier layer; wherein the gaseous mixture comprises the ammonia and diborane in amounts effective to adhere the diffusion barrier layer to the substrate and the conductive contact, and to provide an effective level of conductivity for electrical contact between the conductive fill material and the conductive area in the substrate.
Claim 69
Independent Claim
129 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to a conductive area in an underlying silicon-comprising substrate, the method comprising the steps of: depositing a conductive diffusion barrier layer comprising titanium boronitride over the substrate within the opening by chemical vapor deposition of a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; and filling the opening with a conductive material deposited onto the diffusion barrier layer; wherein the gaseous mixture comprises the ammonia and diborane in amounts effective to adhere the diffusion barrier layer to the substrate and the conductive contact, and to provide an effective level of conductivity for electrical contact between the conductive fill material and the conductive area in the substrate.
Claim 70
Dependent Claim
14 words
The method of claim 56 , wherein the conductive area comprises a shallow junction.
Claim 71
Independent Claim
82 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a semiconductive substrate; forming an opening in the insulative layer to the substrate; forming a conductive diffusion barrier layer comprising titanium boronitride over the substrate; the substrate and the diffusion barrier layer defining a contact interface therebetween; and filling the opening with a fill material; whereby the diffusion barrier layer comprises an amount of boron effective to adhere to the substrate and to the fill material.
Claim 72
Independent Claim
82 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a semiconductive substrate; forming an opening in the insulative layer to the substrate; forming a conductive diffusion barrier layer comprising titanium boronitride over the substrate; the substrate and the diffusion barrier layer defining a contact interface therebetween; and filling the opening with a fill material; whereby the diffusion barrier layer comprises an amount of boron effective to adhere to the substrate and to the fill material.
Claim 73
Dependent Claim
33 words
The method of claim 58 , wherein the step of forming the diffusion barrier layer comprises depositing a gaseous mixture of titanium tetrachloride, ammonia, and diborane onto the substrate by chemical vapor deposition.
Claim 74
Dependent Claim
15 words
The method of claim 58 , wherein the substrate comprises a conductively doped diffusion region.
Claim 75
Dependent Claim
14 words
The method of claim 60 , wherein the diffusion region comprises a shallow junction.
Claim 76
Dependent Claim
15 words
The method of claim 60 , wherein the diffusion region comprises a source or drain.
Claim 77
Dependent Claim
46 words
The method of claim 60 , wherein the fill material comprises a conductive material, and the diffusion barrier layer comprises an amount of nitrogen effective to maintain the conductivity of the diffusion barrier layer at a predetermined level for effective electrical contact with the diffusion region.
Claim 78
Dependent Claim
34 words
The method of claim 63 , further comprising, after the step of filling the opening, the step of removing an excess portion of the conductive material to form a conductive contact in the opening.
Claim 79
Dependent Claim
17 words
The method of claim 64 , wherein the step of removing the conductive material comprises chemical-mechanical polishing.
Claim 80
Dependent Claim
24 words
The method of claim 63 , wherein the conductive material is selected from the group consisting of tungsten, aluminum, titanium, polysilicon and titanium nitride.
Claim 81
Dependent Claim
18 words
The method of claim 58 , wherein the opening has an aspect ratio of about 3:1 or greater.
Claim 82
Dependent Claim
19 words
The method of claim 58 , wherein the opening has a width dimension of about 0.25 m or less.
Claim 83
Dependent Claim
23 words
The method of claim 58 , wherein the diffusion barrier layer is formed to a thickness of about 100 to about 500 angstroms.
Claim 84
Independent Claim
75 words
A method of forming a contact in a semiconductor device, comprising the steps of: providing a semiconductive substrate and an overlying insulative layer formed thereon, the insulative layer having an opening formed therein to the substrate; forming a diffusion barrier layer comprising titanium boronitride over the substrate within the opening, the substrate and diffusion barrier layer defining a contact interface therebetween; and depositing a fill material onto the diffusion barrier layer to fill the opening.
Claim 85
Independent Claim
75 words
A method of forming a contact in a semiconductor device, comprising the steps of: providing a semiconductive substrate and an overlying insulative layer formed thereon, the insulative layer having an opening formed therein to the substrate; forming a diffusion barrier layer comprising titanium boronitride over the substrate within the opening, the substrate and diffusion barrier layer defining a contact interface therebetween; and depositing a fill material onto the diffusion barrier layer to fill the opening.
Claim 86
Dependent Claim
40 words
The method of claim 70 , wherein the step of forming the diffusion barrier layer comprises flowing titanium tetrachloride, ammonia and diborane over the substrate in amounts to adhere the diffusion barrier layer to the substrate and the fill material.
Claim 87
Dependent Claim
55 words
The method of claim 70 , wherein the diffusion barrier layer is formed over a conductively doped diffusion region within the substrate, the fill material comprises a conductive material, and the diffusion barrier layer has a level of conductivity for effective electrical contact between the conductive fill material and the diffusion region in the substrate.
Claim 88
Independent Claim
132 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to the conductive area of the substrate; depositing a diffusion barrier layer comprising titanium boronitride onto the conductive area in the substrate; and depositing a conductive material onto the diffusion barrier layer to fill the opening; whereby the diffusion barrier layer comprises an amount of boron effective to provide an effective level of adhesion of the diffusion barrier layer to the substrate and the conductive fill material; and an amount of nitrogen effective to maintain the conductivity of the diffusion barrier layer at a predetermined level for effective electrical contact between the conductive fill material and the conductive area of the substrate.
Claim 89
Independent Claim
132 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to the conductive area of the substrate; depositing a diffusion barrier layer comprising titanium boronitride onto the conductive area in the substrate; and depositing a conductive material onto the diffusion barrier layer to fill the opening; whereby the diffusion barrier layer comprises an amount of boron effective to provide an effective level of adhesion of the diffusion barrier layer to the substrate and the conductive fill material; and an amount of nitrogen effective to maintain the conductivity of the diffusion barrier layer at a predetermined level for effective electrical contact between the conductive fill material and the conductive area of the substrate.
Claim 90
Dependent Claim
14 words
The method of claim 73 , wherein the conductive area comprises a shallow junction.
Claim 91
Dependent Claim
28 words
The method of claim 73 , wherein the step of depositing the diffusion barrier layer comprises chemical vapor deposition of a mixture comprising titanium tetrachloride, ammonia and diborane.
Claim 92
Dependent Claim
12 words
The method of claim 73 , wherein the conductive material comprises tungsten.
Claim 93
Independent Claim
24 words
A method of forming a diffusion barrier layer on a substrate, comprising the step of: forming a layer of titanium boronitride over the substrate.
Claim 94
Independent Claim
24 words
A method of forming a diffusion barrier layer on a substrate, comprising the step of: forming a layer of titanium boronitride over the substrate.
Claim 95
Independent Claim
34 words
A method of forming a diffusion barrier layer on a substrate, comprising the step of: depositing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form the diffusion barrier layer on the substrate.
Claim 96
Independent Claim
34 words
A method of forming a diffusion barrier layer on a substrate, comprising the step of: depositing a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane to form the diffusion barrier layer on the substrate.
References Cited (Backward Citations)
JPH05267220A
Cited
US5747116A
Cited
US6054191A
Cited
US5946594A
Cited
US5851680A
Cited
US5908947A
Cited
US5700716A
Cited
JPH09306870A
Cited
US5977636A
Cited
US5976976A
Cited
US6184135B1
Cited
US6037252A
Cited
US5990021A
Cited
US6156638A
Cited
US6086442A
Cited
US20010030552A1
Cited
US6329670B1
Cited
US6200649B1
Cited
US20010002071A1
Cited
US20020001908A1
Cited
US6511900B2
Cited
US20010030235A1
Cited
US20030025206A1
Cited
US20030075802A1
Cited
US20030042606A1
Cited
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