US6511900B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Boron incorporated diffusion barrier material
Assignee: Micron Technology Inc
•
Filing: 2000-12-15
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Granted: 2003-01-28
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Expires: 2020-12-15
Abstract
Abstract A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers
Inventors
- 👤 Vishnu K. Agarwal
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:14
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/667; H10D64/669; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/01; H10W20/031; H10W20/032
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
37 words
A method of forming an integrated circuit structure comprising: forming a dielectric layer; and combining tetrakisdimethyl-aminotitanium with a boron containing source of gas to form a diffusion barrier over at least a portion of the dielectric layer.
Claim 2
Independent Claim
37 words
A method of forming an integrated circuit structure comprising: forming a dielectric layer; and combining tetrakisdimethyl-aminotitanium with a boron containing source of gas to form a diffusion barrier over at least a portion of the dielectric layer.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the act of combining occurs at about 0.5 to 100 Torr.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the act of combining occurs at about 300° C. to 600° C.
Claim 5
Dependent Claim
22 words
The method of claim 1 further comprising the act of forming a polysilicon layer between the dielectric layer and the diffusion barrier.
Claim 6
Dependent Claim
23 words
The method of claim 1 further comprising the act of forming a conductive layer over at least a portion of the diffusion barrier.
Claim 7
Dependent Claim
22 words
The method of claim 1 further comprising the act of forming a polysilicon layer between the diffusion barrier and the conductive layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-27 | 2006-07-29 | 2007-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-27 | 2010-07-29 | 2011-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-27 | 2014-07-29 | 2015-01-28 | $7700.00 | Window Closed / Lapsed |