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EP0854505A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Process of depositing a TiN based film during the fabrication of a semiconductor device

Assignee: Texas Instruments Inc
•
Filing: 1998-01-19
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Granted: —
•
Expires: 2018-01-19
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Abstract

Abstract An embodiment of the instant invention is a method of depositing a TiN-based film over a semiconductor wafer, the method comprising the steps of: substantially simultaneously subjecting the semiconductor wafer to TiCl 4 , H 2 , and N 2 ; and subjecting the semiconductor wafer to a plasma, such that the combination of the TiCl 4 , H 2 , and N 2 and the plasma cause the deposition of a TiN based film to form over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to SiH 4 so as to form a TiSi x N y film over the semiconductor wafer. Another embodiment of the instant invention involves additionally subjecting the semiconductor wafer to B 2 H 6 so as to form a TiN x B y layer over the semiconductor wafer.

Inventors

  • 👤 Joing-Ping Lu
  • 👤 Ming-Jang Hwang

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-09 01:35
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/56; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/692; H10D1/696; H10D1/711; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01306; H10D64/01308; H10D64/01312; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W20/047; H10W20/048; H10D1/716

Claims Analysis

Total Claims: 3
Claim 1
Independent Claim 72 words
A method of depositing a TiN-based film over a semiconductor wafer, comprising the steps of: substantially simultaneously subjecting said semiconductor wafer to TiCl 4 , H 2 , and N 2 ; and subjecting said semiconductor wafer to a plasma, such that the combination of said TiCl 4 , H 2 , and N 2 and said plasma cause the deposition of a TiN based film to form over said semiconductor wafer.
Claim 2
Dependent Claim 28 words
The method of Claim 1, further comprising: subjecting said semiconductor wafer to SiH 4 so as to form a TiSi x N y film over said semiconductor wafer.
Claim 3
Dependent Claim 33 words
The method of Claim 1 or Claim 2, further comprising: subjecting said semiconductor wafer to B 2 H 6 so as to form a TiN x B y layer over said semiconductor wafer.

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