Patent FR462233A successfully refreshed from Google Patents.
Patent US6511900B2 successfully refreshed from Google Patents.
US6511900B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Boron incorporated diffusion barrier material
Assignee: Micron Technology Inc
•
Filing: 2000-12-15
•
Granted: 2003-01-28
•
Expires: 2020-12-15
Abstract
Abstract A diffusion barrier layer comprising TiNxBy is disclosed for protection of gate oxide layers in integrated transistors. The diffusion barrier layer can be fabricated by first forming a TiN layer and then incorporating boron into the TiN layer. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a TDMAT process including boron. The diffusion barrier layer can also be fabricated by forming a TiNxBy layer using a CVD process. The diffusion barrier layer is of particular utility in conjunction with tungsten or tungsten silicide conductive layers
Inventors
- 👤 Vishnu K. Agarwal
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:07
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/01306; H10D64/01308; H10D64/01312; H10D64/60; H10D64/66; H10D64/661; H10D64/662; H10D64/664; H10D64/667; H10D64/669; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W20/01; H10W20/031; H10W20/032
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
37 words
A method of forming an integrated circuit structure comprising: forming a dielectric layer; and combining tetrakisdimethyl-aminotitanium with a boron containing source of gas to form a diffusion barrier over at least a portion of the dielectric layer.
Claim 2
Independent Claim
37 words
A method of forming an integrated circuit structure comprising: forming a dielectric layer; and combining tetrakisdimethyl-aminotitanium with a boron containing source of gas to form a diffusion barrier over at least a portion of the dielectric layer.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the act of combining occurs at about 0.5 to 100 Torr.
Claim 4
Dependent Claim
18 words
The method of claim 1 wherein the act of combining occurs at about 300° C. to 600° C.
Claim 5
Dependent Claim
22 words
The method of claim 1 further comprising the act of forming a polysilicon layer between the dielectric layer and the diffusion barrier.
Claim 6
Dependent Claim
23 words
The method of claim 1 further comprising the act of forming a conductive layer over at least a portion of the diffusion barrier.
Claim 7
Dependent Claim
22 words
The method of claim 1 further comprising the act of forming a polysilicon layer between the diffusion barrier and the conductive layer.
References Cited (Backward Citations)
US4920071A
Cited
US4823182A
Cited
US4884123A
Cited
US4895770A
Cited
US5298333A
Cited
US5391516A
Cited
US5248903A
Cited
US5486492A
Cited
US5668394A
Cited
US5364803A
Cited
US5441904A
Cited
US5541427A
Cited
US5684304A
Cited
US5720098A
Cited
US5506499A
Cited
US5742174A
Cited
US5693377A
Cited
US6017818A
Cited
US5851680A
Cited
US5593903A
Cited
US5962867A
Cited
US5994716A
Cited
US6069482A
Cited
EP0854505A2
Cited
US5837598A
Cited
US5920081A
Cited
US6028360A
Cited
US6133582A
Cited
US6200649B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-01-27 | 2006-07-29 | 2007-01-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-01-27 | 2010-07-29 | 2011-01-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-01-27 | 2014-07-29 | 2015-01-28 | $7700.00 | Window Closed / Lapsed |