US5248903A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Composite bond pads for semiconductor devices
Assignee: LSI Corp
•
Filing: 1992-09-18
•
Granted: 1993-09-28
•
Expires: 2012-09-18
Abstract
Abstract Bond pad lift problems encountered during bonding are alleviated by providing an upper bond pad, a lower bond pad and an insulating component between the upper and lower bond pads. At least one opening is provided through the insulating component, extending from the bottom bond pad to the upper bond pad. The at least one opening is aligned with a peripheral region of the bottom bond pad. Conductive material fills the at least one opening, and electrically connects the top and bottom bond pads. In one embodiment, the at least one opening is a plurality of conductive vias. In another embodiment, the at least one opening is a ring-like opening extending around the peripheral region. In yet another embodiment, the at least one opening is one or more elongated slit-like openings.
Inventors
- 👤 Dorothy A. Heim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 00:02
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/70; G03F7/70425; G03F7/70433; H; H10; H10W; H10W72/00; H10W72/01; H10W72/019; H10W72/071; H10W72/075; H10W72/07551; H10W72/07554; H10W72/20; H10W72/251; H10W72/252; H10W72/29; H10W72/50; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/90; H10W72/921; H10W72/923; H10W72/9232; H10W72/931; H10W72/932; H10W72/934; H10W72/981; H10W72/983
Claims Analysis
Total Claims: 33
Claim 1
Independent Claim
200 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface with a first area; an upper bond pad element having a bottom surface with a second area, the upper bond pad element aligned atop and spaced apart from the lower bond pad element; a volumetric space defined between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; an insulating component disposed between the upper and lower bond pad elements and substantially filling the volumetric space between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein the peripheral region extends from a periphery of the first area to approximately less than 10% towards a center of the first area on the top surface of the lower bond pad.
Claim 2
Dependent Claim
200 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface with a first area; an upper bond pad element having a bottom surface with a second area, the upper bond pad element aligned atop and spaced apart from the lower bond pad element; a volumetric space defined between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; an insulating component disposed between the upper and lower bond pad elements and substantially filling the volumetric space between the top surface of the lower bond pad element and the bottom surface of the upper bond pad element; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein the peripheral region extends from a periphery of the first area to approximately less than 10% towards a center of the first area on the top surface of the lower bond pad.
Claim 3
Dependent Claim
104 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias.
Claim 4
Dependent Claim
104 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a plurality of vias.
Claim 5
Dependent Claim
15 words
Bond pad, according to claim 2, wherein: each via measures approximately one micron in cross-section.
Claim 6
Dependent Claim
21 words
Bond pad, according to claim 2, wherein: the plurality of vias extend in at least one "string" around the peripheral region.
Claim 7
Dependent Claim
21 words
Bond pad, according to claim 4, wherein: the plurality of vias extend in two or more strings around the peripheral region.
Claim 8
Dependent Claim
32 words
Bond pad, according to claim 5, wherein: the two or more strings of vias are disposed so that the vias of one string are offset from the vias of another adjacent string.
Claim 9
Dependent Claim
108 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a ring-like opening extending around the peripheral region.
Claim 10
Dependent Claim
108 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is a ring-like opening extending around the peripheral region.
Claim 11
Dependent Claim
106 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is one or more elongated slit-like openings.
Claim 12
Dependent Claim
106 words
Composite Bond pad for semiconductor device comprising: a lower bond pad element having a top surface; an upper bond pad element having a bottom surface; an insulating component disposed between the upper and lower bond pad elements; at least one opening through the insulating component, extending from the upper bond pad element to the lower bond pad element, and aligned with a peripheral region of the bottom bond pad element; and conductive material filling the at least one opening, and electrically connecting the upper bond pad element to the lower bond pad element; wherein: the at least one opening is one or more elongated slit-like openings.
Claim 13
Dependent Claim
43 words
Bond pad, according to claim 8, wherein: two elongated slit-like openings are provided; and one of the two elongated slit-like openings is disposed at an opposite end of the lower bond pad element relative to the other of the two elongated slit-like openings.
Claim 14
Dependent Claim
17 words
The bond pad of claim 1, further comprising: a barrier metal layer beneath said lower bond pad.
Claim 15
Dependent Claim
19 words
The bond pad of claim 10, wherein: said barrier metal is selected from titanium, titanium nitride and titanium tungsten.
Claim 16
Dependent Claim
28 words
The bond pad of claim 1, wherein: the at least one opening has a third area, and the third area is less than 10% of the first area.
Claim 17
Dependent Claim
20 words
An integrated circuit metallization structure comprising a plurality of the composite bond pads of claim 1 interconnected with conductive wiring.
Claim 18
Dependent Claim
33 words
The structure of claim 13, wherein said structure comprises three levels of metal and wherein each level is electrically connected to the next level by one or more of said composite bond pads.
Claim 19
Dependent Claim
17 words
The bond pad of claim 2, further comprising: a barrier metal layer beneath said lower bond pad.
Claim 20
Dependent Claim
19 words
The bond pad of claim 15, wherein: said barrier metal is selected from titanium, titanium nitride and titanium tungsten.
Claim 21
Dependent Claim
28 words
The bond pad of claim 2, wherein: the at least one opening has a third area, and the third area is less than 10% of the first area.
Claim 22
Dependent Claim
17 words
An integrated circuit metallization structure comprising a plurality of the composite bond pads of claim 2 interconnected
Claim 23
Dependent Claim
33 words
The structure of claim 18, wherein said structure comprises three levels of metal and wherein each level is electrically connected to the next level by one or more of said composite bond pads.
Claim 24
Dependent Claim
17 words
The bond pad of claim 7, further comprising: a barrier metal layer beneath said lower bond pad.
Claim 25
Dependent Claim
19 words
The bond pad of claim 20, wherein: said barrier metal is selected from titanium, titanium nitride and titanium tungsten.
Claim 26
Dependent Claim
28 words
The bond pad of claim 7, wherein: the at least one opening has a third area, and the third area is less than 10% of the first area.
Claim 27
Dependent Claim
20 words
An integrated circuit metallization structure comprising a plurality of the composite bond pads of claim 7 interconnected with conductive wiring.
Claim 28
Dependent Claim
33 words
The structure of claim 23, wherein said structure comprises three levels of metal and wherein each level is electrically connected to the next level by one or more of said composite bond pads.
Claim 29
Dependent Claim
17 words
The bond pad of claim 8, further comprising: a barrier metal layer beneath said lower bond pad.
Claim 30
Dependent Claim
19 words
The bond pad of claim 25, wherein: said barrier metal is selected from titanium, titanium nitride and titanium tungsten.
Claim 31
Dependent Claim
28 words
The bond pad of claim 8, wherein: the at least one opening has a third area, and the third area is less than 10% of the first area.
Claim 32
Dependent Claim
20 words
An integrated circuit metallization structure comprising a plurality of the composite bond pads of claim 8 interconnected with conductive wiring.
Claim 33
Dependent Claim
33 words
The structure of claim 28, wherein said structure comprises three levels of metal and wherein each level is electrically connected to the next level by one or more of said composite bond pads.
References Cited (Backward Citations)
US4057659A
Cited
US4914054A
Cited
US4843453A
Cited
US4965218A
Cited
US4742023A
Cited
US4924294A
Cited
US5169802A
Cited
US5166096A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1996-09-27 | 1997-03-29 | 1997-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2000-09-27 | 2001-03-29 | 2001-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2004-09-27 | 2005-03-29 | 2005-09-28 | $7700.00 | Window Closed / Lapsed |