US4914054A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a semiconductor device provided with front and back surface electrodes
Assignee: Toshiba Corp
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Filing: 1986-10-29
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Granted: 1990-04-03
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Expires: 2006-10-29
Abstract
Abstract A semiconductor device comprises a semiconductor substrate in which a plurality of semiconductor regions are formed, a front surface electrode in contact with the region, and a back surface electrode consisting of a gold alloy layer and a silver layer. After formation of the front surface electrode, the back side of the substrate is polished. Then, the gold alloy layer and the silver layer are formed in succession on the polished back surface of the substrate.
Inventors
- 👤 Shigeru Moriyama
- 👤 Kinzo Tao
- 👤 Yoshio Yamamoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W72/00; H10W72/01; H10W72/012; H10W72/20; H10W72/251; H10W72/29; H10W72/50; H10W72/59; H10W72/90; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S438/00; Y10S438/928
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
121 words
A method of producing a semiconductor device, comprising the steps of: forming a front surface electrode connected to a prescribed semiconductor region of a semiconductor substrate, provided with a plurality of semiconductor regions, via an opening made in an insulation film formed on the substrate surface; polishing the back side of the substrate after said front surface electrode has been formed; and then forming a back surface electrode by forming a gold alloy layer on the polished back surface of the substrate and forming a silver layer on the gold alloy layer, said back surface electrode being formed without a heat treatment step, wherein the gold alloy layer is formed by vapor deposition of an alloy consisting essentially of Au-Ge alloy.
Claim 2
Independent Claim
121 words
A method of producing a semiconductor device, comprising the steps of: forming a front surface electrode connected to a prescribed semiconductor region of a semiconductor substrate, provided with a plurality of semiconductor regions, via an opening made in an insulation film formed on the substrate surface; polishing the back side of the substrate after said front surface electrode has been formed; and then forming a back surface electrode by forming a gold alloy layer on the polished back surface of the substrate and forming a silver layer on the gold alloy layer, said back surface electrode being formed without a heat treatment step, wherein the gold alloy layer is formed by vapor deposition of an alloy consisting essentially of Au-Ge alloy.
Claim 3
Independent Claim
121 words
A method of producing a semiconductor device, comprising the steps of: forming a front surface electrode connected to a prescribed semiconductor region of a semiconductor substrate, provided with a plurality of semiconductor regions, via an opening made in an insulation film formed on the substrate surface; polishing the back side of the substrate after said front surface electrode has been formed; and then forming a back surface electrode by forming a gold alloy layer on the polished back surface of the substrate and forming a silver layer on the gold alloy layer, said back surface electrode being formed without a heat treatment step, wherein the gold alloy layer is formed by vapor deposition of an alloy consisting essentially of Au-Ge-Sb alloy.
Claim 4
Independent Claim
121 words
A method of producing a semiconductor device, comprising the steps of: forming a front surface electrode connected to a prescribed semiconductor region of a semiconductor substrate, provided with a plurality of semiconductor regions, via an opening made in an insulation film formed on the substrate surface; polishing the back side of the substrate after said front surface electrode has been formed; and then forming a back surface electrode by forming a gold alloy layer on the polished back surface of the substrate and forming a silver layer on the gold alloy layer, said back surface electrode being formed without a heat treatment step, wherein the gold alloy layer is formed by vapor deposition of an alloy consisting essentially of Au-Ge-Sb alloy.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1993-04-02 | 1993-10-02 | 1994-04-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1997-04-02 | 1997-10-02 | 1998-04-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2001-04-02 | 2001-10-02 | 2002-04-03 | $7700.00 | Window Closed / Lapsed |