US6037252A
Expired / Lapsed
US
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Method of titanium nitride contact plug formation
Assignee: Tokyo Electron Ltd
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Filing: 1997-11-05
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Granted: 2000-03-14
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Expires: 2017-11-05
Abstract
Abstract A method of filling a via less than about 0.16 μm in diameter in an oxide layer of a substrate with a TiN plug deposited by CVD and capping the plug with TiN only. In one embodiment, a first layer of TiN is deposited on a substrate by thermal CVD, and a second layer of TiN is deposited on the first layer by PECVD. Alternatively, a one-step process is used to deposit a TiN layer using either thermal CVD or PECVD. The method eliminates a tungsten layer, and thus eliminates a processing step.
Inventors
- 👤 Joseph T. Hillman
- 👤 Michael S. Ameen
- 👤 Robert F. Foster
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:37
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; C23C16/22; C23C16/30; C23C16/34; H10W20/056; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
53 words
A method of filling a via in an oxide layer of a substrate with a TiN plug and capping, comprising: depositing a first TiN layer on the oxide layer to form a plug to fill a via, and depositing a second TiN layer on the first TiN layer to cap the first layer.
Claim 2
Independent Claim
53 words
A method of filling a via in an oxide layer of a substrate with a TiN plug and capping, comprising: depositing a first TiN layer on the oxide layer to form a plug to fill a via, and depositing a second TiN layer on the first TiN layer to cap the first layer.
Claim 3
Dependent Claim
26 words
The method of claim 1 comprising depositing the first TiN layer to form a plug in a via having a diameter less than about 0.16 μm.
Claim 4
Dependent Claim
23 words
The method of claim 1 further comprising depositing the first TiN layer by thermal CVD and depositing the second TiN layer by PECVD.
Claim 5
Dependent Claim
31 words
The method of claim 1 wherein the first TiN layer deposited is about 800 Å thick and the second TiN layer deposited is about 700 Å to about 1200 Å thick.
Claim 6
Dependent Claim
37 words
The method of claim 1 wherein the depositing of the first TiN layer and the depositing of the second TiN layer is performed in a single reaction chamber at a fixed susceptor temperature of about 650° C.
Claim 7
Independent Claim
52 words
A method of filling a via having a diameter less than about 0.16 μm in an oxide layer of a substrate with a TiN plug, comprising depositing a single TiN layer of about 1500 Å to about 2000 Å to the via and the oxide layer of the substrate by thermal CVD.
Claim 8
Independent Claim
52 words
A method of filling a via having a diameter less than about 0.16 μm in an oxide layer of a substrate with a TiN plug, comprising depositing a single TiN layer of about 1500 Å to about 2000 Å to the via and the oxide layer of the substrate by thermal CVD.
Claim 9
Independent Claim
51 words
A method of filling a via having a diameter less than about 0.16 μm in an oxide layer of a substrate with a TiN plug, comprising depositing a single TIN layer of about 1500 Å to about 2000 Å to the via and the oxide layer of the substrate by PECVD.
Claim 10
Independent Claim
51 words
A method of filling a via having a diameter less than about 0.16 μm in an oxide layer of a substrate with a TiN plug, comprising depositing a single TIN layer of about 1500 Å to about 2000 Å to the via and the oxide layer of the substrate by PECVD.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-03-14 | 2003-09-13 | 2004-03-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-03-14 | 2007-09-13 | 2008-03-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-03-14 | 2011-09-13 | 2012-03-14 | $7700.00 | Window Closed / Lapsed |