US5610106A
Expired / Lapsed
US
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Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
Assignee: Tokyo Electron Ltd
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Filing: 1995-03-10
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Granted: 1997-03-11
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Expires: 2015-03-10
Abstract
Abstract A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400 DEG C. to about 500 DEG C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
Inventors
- 👤 Robert F. Foster
- 👤 Joseph T. Hillman
- 👤 Rikhit Arora
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:20
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45557
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
66 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of reacting gases wherein said reacting gases are titanium tetrachloride and ammonia, and wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches; contacting said substrate with said plasma wherein titanium nitride is deposited on said substrate.
Claim 2
Independent Claim
66 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of reacting gases wherein said reacting gases are titanium tetrachloride and ammonia, and wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches; contacting said substrate with said plasma wherein titanium nitride is deposited on said substrate.
Claim 3
Dependent Claim
15 words
The method claims in claim 1 further comprising combining a diluent with said reacting gases.
Claim 4
Dependent Claim
24 words
The method claimed in claim 1 wherein titanium tetrachloride is present at a partial pressure effective to form TiN and greater than 0.001 torr.
Claim 5
Dependent Claim
22 words
The method claimed in claim 3 wherein said plasma is established in an atmosphere having a pressure of 0.5 to 20 torr.
Claim 6
Dependent Claim
23 words
The method claimed in claim 3 wherein said substrate is heated from a temperature of about 400° C. up to about 500° C.
Claim 7
Dependent Claim
31 words
The method claimed in claim 2 wherein said diluent is nitrogen and a ratio of nitrogen to ammonia is established at from about 10:1 to about 10,000:1 on a molar basis.
Claim 8
Dependent Claim
22 words
The method claimed in claim 3 wherein said partial pressure of titanium tetrachloride is from greater than 0.001 torr to 0.01 torr.
Claim 9
Independent Claim
112 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of a reactant gas mixture wherein said reactant gas mixture is a mixture of titanium tetrachloride, ammonia and nitrogen, wherein the ratio of ammonia to titanium tetrachloride is from about 2:1 to about 100:1, wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches, and contacting said substrate with said plasma at a pressure of 0.5 to 20 torr, wherein said substrate is heated to a temperature of about 400° C. to about 500° C., whereby titanium nitride is deposited on said substrate.
Claim 10
Independent Claim
112 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of a reactant gas mixture wherein said reactant gas mixture is a mixture of titanium tetrachloride, ammonia and nitrogen, wherein the ratio of ammonia to titanium tetrachloride is from about 2:1 to about 100:1, wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches, and contacting said substrate with said plasma at a pressure of 0.5 to 20 torr, wherein said substrate is heated to a temperature of about 400° C. to about 500° C., whereby titanium nitride is deposited on said substrate.
References Cited (Backward Citations)
US4798165A
Cited
US4792378A
Cited
US4897709A
Cited
DE4012901A1
Cited
US5192370A
Cited
US5052339A
Cited
US5296404A
Cited
US5268034A
Cited
US5433787A
Cited
US5342652A
Cited
US5356476A
Cited
US5370739A
Cited
US5434110A
Cited
US5416045A
Cited
US5246881A
Cited
US5443647A
Cited
US5378501A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |