US5378501A
Expired / Lapsed
US
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Method for chemical vapor deposition of titanium nitride films at low temperatures
Assignee: Tokyo Electron Ltd
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Filing: 1993-10-05
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Granted: 1995-01-03
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Expires: 2013-10-05
Abstract
Abstract Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550 DEG C. This is accomplished by minimizing the boundary layer thickness over the substrate.
Inventors
- 👤 Robert F. Foster
- 👤 Joseph T. Hillman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:23
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45502; C23C16/45504; C23C16/45508; C23C16/45561; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate surface comprising the steps of: passing a gaseous reaction mixture of titanium tetrachloride, ammonia and a diluent over said substrate surface; maintaining said substrate surface at a temperature of 200° C. to 500° C.; and establishing and maintaining a boundary layer of less than or equal to 4 cm over said substrate surface, thereby forming a layer of titanium nitride on said substrate surface.
Claim 2
Independent Claim
77 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate surface comprising the steps of: passing a gaseous reaction mixture of titanium tetrachloride, ammonia and a diluent over said substrate surface; maintaining said substrate surface at a temperature of 200° C. to 500° C.; and establishing and maintaining a boundary layer of less than or equal to 4 cm over said substrate surface, thereby forming a layer of titanium nitride on said substrate surface.
Claim 3
Dependent Claim
28 words
The method claimed in claim 1 wherein said reactor is a rotating disk reactor and said titanium tetrachloride, ammonia and diluent are forced perpendicular to the substrate surface.
Claim 4
Dependent Claim
21 words
The method claimed in claim 2 wherein said substrate is rotated at a rate of about 150 to about 1500 rpm.
Claim 5
Dependent Claim
22 words
The method claimed in claim 2 wherein said diluent gas is selected from the group consisting of hydrogen, helium, argon and nitrogen.
Claim 6
Dependent Claim
13 words
The method claimed in claim 3 wherein said temperature is about 450° C.
Claim 7
Dependent Claim
19 words
The method claimed in claim 1 wherein said gas mixture is passed parallel to the surface of said substrate.
Claim 8
Dependent Claim
15 words
The method claimed in claim 6 wherein said temperature is maintained at about 450° C.
Claim 9
Dependent Claim
12 words
The method claimed in claim 7 wherein said diluent gas is nitrogen.
Claim 10
Independent Claim
104 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate having a first surface and an opposite second surface, said method comprising the steps of forcing a gaseous reactant mixture of titanium tetrachloride, ammonia and a diluent downwardly against said first surface, heating said second surface to a temperature of 350° C. to 500° C., and rotating said substrate at a rate of 100 to 1500 rpm, maintaining a viscosity and flow rate of said gaseous reactant mixture to establish a boundary layer thickness of less than about 4 cm thereby forming a layer of titanium nitride on said first surface.
Claim 11
Independent Claim
104 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate having a first surface and an opposite second surface, said method comprising the steps of forcing a gaseous reactant mixture of titanium tetrachloride, ammonia and a diluent downwardly against said first surface, heating said second surface to a temperature of 350° C. to 500° C., and rotating said substrate at a rate of 100 to 1500 rpm, maintaining a viscosity and flow rate of said gaseous reactant mixture to establish a boundary layer thickness of less than about 4 cm thereby forming a layer of titanium nitride on said first surface.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-01-02 | 1998-07-04 | 1999-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-02 | 2002-07-04 | 2003-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-02 | 2006-07-04 | 2007-01-03 | $7700.00 | Window Closed / Lapsed |