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US5378501A
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Method for chemical vapor deposition of titanium nitride films at low temperatures
Assignee: Tokyo Electron Ltd
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Filing: 1993-10-05
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Granted: 1995-01-03
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Expires: 2013-10-05
Abstract
Abstract Titianium nitride film is deposited upon a semi-conductor substrate by chemical vapor deposition of titanium tetrachloride, ammonia and a diluent at temperatures less than 550 DEG C. This is accomplished by minimizing the boundary layer thickness over the substrate.
Inventors
- 👤 Robert F. Foster
- 👤 Joseph T. Hillman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 13:35
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45502; C23C16/45504; C23C16/45508; C23C16/45561; C23C16/458; C23C16/4582; C23C16/4583; C23C16/4584
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
77 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate surface comprising the steps of: passing a gaseous reaction mixture of titanium tetrachloride, ammonia and a diluent over said substrate surface; maintaining said substrate surface at a temperature of 200° C. to 500° C.; and establishing and maintaining a boundary layer of less than or equal to 4 cm over said substrate surface, thereby forming a layer of titanium nitride on said substrate surface.
Claim 2
Independent Claim
77 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate surface comprising the steps of: passing a gaseous reaction mixture of titanium tetrachloride, ammonia and a diluent over said substrate surface; maintaining said substrate surface at a temperature of 200° C. to 500° C.; and establishing and maintaining a boundary layer of less than or equal to 4 cm over said substrate surface, thereby forming a layer of titanium nitride on said substrate surface.
Claim 3
Dependent Claim
28 words
The method claimed in claim 1 wherein said reactor is a rotating disk reactor and said titanium tetrachloride, ammonia and diluent are forced perpendicular to the substrate surface.
Claim 4
Dependent Claim
21 words
The method claimed in claim 2 wherein said substrate is rotated at a rate of about 150 to about 1500 rpm.
Claim 5
Dependent Claim
22 words
The method claimed in claim 2 wherein said diluent gas is selected from the group consisting of hydrogen, helium, argon and nitrogen.
Claim 6
Dependent Claim
13 words
The method claimed in claim 3 wherein said temperature is about 450° C.
Claim 7
Dependent Claim
19 words
The method claimed in claim 1 wherein said gas mixture is passed parallel to the surface of said substrate.
Claim 8
Dependent Claim
15 words
The method claimed in claim 6 wherein said temperature is maintained at about 450° C.
Claim 9
Dependent Claim
12 words
The method claimed in claim 7 wherein said diluent gas is nitrogen.
Claim 10
Independent Claim
104 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate having a first surface and an opposite second surface, said method comprising the steps of forcing a gaseous reactant mixture of titanium tetrachloride, ammonia and a diluent downwardly against said first surface, heating said second surface to a temperature of 350° C. to 500° C., and rotating said substrate at a rate of 100 to 1500 rpm, maintaining a viscosity and flow rate of said gaseous reactant mixture to establish a boundary layer thickness of less than about 4 cm thereby forming a layer of titanium nitride on said first surface.
Claim 11
Independent Claim
104 words
A method of chemical vapor deposition of titanium nitride onto a semiconductor substrate having a first surface and an opposite second surface, said method comprising the steps of forcing a gaseous reactant mixture of titanium tetrachloride, ammonia and a diluent downwardly against said first surface, heating said second surface to a temperature of 350° C. to 500° C., and rotating said substrate at a rate of 100 to 1500 rpm, maintaining a viscosity and flow rate of said gaseous reactant mixture to establish a boundary layer thickness of less than about 4 cm thereby forming a layer of titanium nitride on said first surface.
References Cited (Backward Citations)
US3672948A
Cited
US4535000A
Cited
US4570328A
Cited
US4574093A
Cited
US4800105A
Cited
US5104482A
Cited
US4986216A
Cited
US5186756A
Cited
US5173336A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1998-01-02 | 1998-07-04 | 1999-01-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-01-02 | 2002-07-04 | 2003-01-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-01-02 | 2006-07-04 | 2007-01-03 | $7700.00 | Window Closed / Lapsed |