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US5610106A
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US
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Plasma enhanced chemical vapor deposition of titanium nitride using ammonia
Assignee: Tokyo Electron Ltd
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Filing: 1995-03-10
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Granted: 1997-03-11
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Expires: 2015-03-10
Abstract
Abstract A method of forming a titanium nitride film onto a semi-conductor substrate includes forming a plasma of a reactant gas mixture. The reactant gas mixture includes titanium tetrachloride, ammonia and nitrogen. The ratio of nitrogen to ammonia is established at about 10:1 to about 10,000:1 and the partial pressure of titanium tetrachloride is established to ensure formation of titanium nitride. The plasma is contacted to a substrate heated to a temperature of 400 DEG C. to about 500 DEG C. This provides a high purity titanium nitride film with excellent conformality at temperatures which will not interfere with integrated circuits having previously-deposited aluminum members.
Inventors
- 👤 Robert F. Foster
- 👤 Joseph T. Hillman
- 👤 Rikhit Arora
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:29
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45557
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
66 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of reacting gases wherein said reacting gases are titanium tetrachloride and ammonia, and wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches; contacting said substrate with said plasma wherein titanium nitride is deposited on said substrate.
Claim 2
Independent Claim
66 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of reacting gases wherein said reacting gases are titanium tetrachloride and ammonia, and wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches; contacting said substrate with said plasma wherein titanium nitride is deposited on said substrate.
Claim 3
Dependent Claim
15 words
The method claims in claim 1 further comprising combining a diluent with said reacting gases.
Claim 4
Dependent Claim
24 words
The method claimed in claim 1 wherein titanium tetrachloride is present at a partial pressure effective to form TiN and greater than 0.001 torr.
Claim 5
Dependent Claim
22 words
The method claimed in claim 3 wherein said plasma is established in an atmosphere having a pressure of 0.5 to 20 torr.
Claim 6
Dependent Claim
23 words
The method claimed in claim 3 wherein said substrate is heated from a temperature of about 400° C. up to about 500° C.
Claim 7
Dependent Claim
31 words
The method claimed in claim 2 wherein said diluent is nitrogen and a ratio of nitrogen to ammonia is established at from about 10:1 to about 10,000:1 on a molar basis.
Claim 8
Dependent Claim
22 words
The method claimed in claim 3 wherein said partial pressure of titanium tetrachloride is from greater than 0.001 torr to 0.01 torr.
Claim 9
Independent Claim
112 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of a reactant gas mixture wherein said reactant gas mixture is a mixture of titanium tetrachloride, ammonia and nitrogen, wherein the ratio of ammonia to titanium tetrachloride is from about 2:1 to about 100:1, wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches, and contacting said substrate with said plasma at a pressure of 0.5 to 20 torr, wherein said substrate is heated to a temperature of about 400° C. to about 500° C., whereby titanium nitride is deposited on said substrate.
Claim 10
Independent Claim
112 words
A method of depositing titanium nitride onto a substrate by chemical vapor deposition comprising establishing a plasma of a reactant gas mixture wherein said reactant gas mixture is a mixture of titanium tetrachloride, ammonia and nitrogen, wherein the ratio of ammonia to titanium tetrachloride is from about 2:1 to about 100:1, wherein said plasma is created at a showerhead spaced from said substrate at a distance of about 0.25 to about 3 inches, and contacting said substrate with said plasma at a pressure of 0.5 to 20 torr, wherein said substrate is heated to a temperature of about 400° C. to about 500° C., whereby titanium nitride is deposited on said substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2000-03-10 | 2000-09-09 | 2001-03-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2004-03-10 | 2004-09-09 | 2005-03-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2008-03-10 | 2008-09-09 | 2009-03-11 | $7700.00 | Window Closed / Lapsed |