EP0478233A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Process for fabricating integrated circuits
Assignee: AT&T Inc
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Filing: 1991-09-20
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Granted: —
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Expires: 2011-09-20
Abstract
Abstract Integrated circuits employing titanium nitride are significantly improved by using a specific method for formation of the titanium nitride in the device fabrication. In particular, a plasma such as one formed in an electron cyclotron resonance apparatus is employed to dissociate a source of nitrogen and a source of hydrogen and the dissociation products are combined at the integrated circuit deposition substrate with titanium tetrachloride. The resulting deposition is essentially devoid of chlorine and has advantageous step-coverage properties.
Inventors
- 👤 Pang-Dow Foo
- 👤 Chien-Shing Pai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
62 words
A process of fabricating a device comprising the steps of forming an opening in a material layer overlying a substrate and forming titanium nitride in said etch pit characterized in that said forming of said titanium nitride comprises introducing titanium tetrachloride within the vicinity of said substrate and reacting said titanium tetrachloride with a mole excess of atomic nitrogen and with hydrogen.
Claim 2
Dependent Claim
37 words
The process of claim 1 wherein said atomic nitrogen is formed by introducing a source of nitrogen into a discharge formed in an apparatus chosen from the group consisting of electron resonance cyclotron and a helical resonator.
Claim 3
Dependent Claim
13 words
The process of claim 2 wherein said source of nitrogen comprises molecular nitrogen.
Claim 4
Dependent Claim
12 words
The process of claim 2 wherein said source of nitrogen comprises ammonia.
Claim 5
Dependent Claim
18 words
The process of claim 1 wherein said atomic nitrogen and said hydrogen is produced from the same source.
Claim 6
Dependent Claim
10 words
The process of claim 5 wherein said source comprises ammonia.
Claim 7
Dependent Claim
17 words
The process of claim 1 wherein said opening allows electrical contact to a region underlying said layer.
Claim 8
Dependent Claim
18 words
The process of claim 1 wherein said region comprises a source or drain of a field effect transistor.
Claim 9
Dependent Claim
11 words
The process of claim 1 wherein said material comprises silicon dioxide.
References Cited (Backward Citations)
No citation records indexed.
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