US6054191A
Expired / Lapsed
US
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Method of forming an electrical contact to a silicon substrate
Assignee: Micron Technology Inc
•
Filing: 1998-02-24
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Granted: 2000-04-25
•
Expires: 2018-02-24
Abstract
Abstract A method of forming an electrical contact to a substrate includes, a) placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; b) injecting a first titanium organometallic precursor to within the reactor having the substrate positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon from the first titanium organometallic precursor, the first layer and silicon node defaming a contact interface therebetween; c) after depositing the first layer, ceasing to inject the first titanium organometallic precursor into the reactor and first injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer; d) after depositing the first layer, exposing an interface of the titanium nitride and silicon node to conditions effective to transform the interface into a lower electrical resistance; e) the "a" and "b" steps can be repeated to provide a second layer atop the first layer.
Inventors
- 👤 Sujit Sharan
- 👤 Gurtej S. Sandhu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:35
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/34; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45534; C23C16/45536; C23C16/4554; C23C16/56; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/033; H10W20/035; H10W20/047; H10W20/048; H10W20/052; H10W20/0523
Claims Analysis
Total Claims: 40
Claim 1
Independent Claim
113 words
A method of forming an electrical contact to a substrate comprising: forming a layer over a silicon-comprising node, the layer comprising titanium nitride having carbon incorporated therein, the layer and silicon-comprising node defining a contact interface therebetween having a first electrical resistance; after forming the layer, exposing the interface of the titanium nitride and silicon-comprising node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; and treating the layer with a plasma to remove carbon from the layer, the plasma having a component which is effective when in an activated state to interact with a component of the layer to remove carbon.
Claim 2
Independent Claim
113 words
A method of forming an electrical contact to a substrate comprising: forming a layer over a silicon-comprising node, the layer comprising titanium nitride having carbon incorporated therein, the layer and silicon-comprising node defining a contact interface therebetween having a first electrical resistance; after forming the layer, exposing the interface of the titanium nitride and silicon-comprising node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; and treating the layer with a plasma to remove carbon from the layer, the plasma having a component which is effective when in an activated state to interact with a component of the layer to remove carbon.
Claim 3
Dependent Claim
17 words
The method of claim 1 wherein the interface exposing and the plasma treating step are conducted together.
Claim 4
Dependent Claim
15 words
The method of claim 1 wherein the interface exposing transforms the interface into titanium silicide.
Claim 5
Independent Claim
181 words
A method of forming an electrical contact to a substrate comprising: forming a first layer over a silicon-comprising node, the first layer comprising titanium nitride having carbon incorporated therein, the first layer and silicon-comprising node defining a contact interface therebetween having a first electrical resistance; after forming the first layer, exposing the interface of the titanium nitride and silicon-comprising node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; treating the first layer with a first plasma to remove carbon from the first layer, the first plasma having a component which is effective when in an activated state to interact with a component of the first layer to remove carbon; forming second layer over the plasma-treated first layer, the second layer comprising titanium nitride having carbon incorporated therein; and treating the second layer with a second plasma to remove carbon from the second layer, the second plasma having a component which is effective when in an activated state to interact with a component of the second layer to remove carbon.
Claim 6
Independent Claim
181 words
A method of forming an electrical contact to a substrate comprising: forming a first layer over a silicon-comprising node, the first layer comprising titanium nitride having carbon incorporated therein, the first layer and silicon-comprising node defining a contact interface therebetween having a first electrical resistance; after forming the first layer, exposing the interface of the titanium nitride and silicon-comprising node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; treating the first layer with a first plasma to remove carbon from the first layer, the first plasma having a component which is effective when in an activated state to interact with a component of the first layer to remove carbon; forming second layer over the plasma-treated first layer, the second layer comprising titanium nitride having carbon incorporated therein; and treating the second layer with a second plasma to remove carbon from the second layer, the second plasma having a component which is effective when in an activated state to interact with a component of the second layer to remove carbon.
Claim 7
Dependent Claim
34 words
The method of claim 4 wherein the activated state component of the first plasma effectively diffuses into the first layer and interacts with the first layer component to remove carbon from the first layer.
Claim 8
Dependent Claim
51 words
The method of claim 4 wherein the activated state component of the first plasma comprises a component which is chemically reactive with the first layer component, the activated state component effectively diffusing into the first layer and chemically reacting with the first layer component to remove carbon from the first layer.
Claim 9
Dependent Claim
15 words
The method of claim 4 wherein the first and second plasma components are the same.
Claim 10
Dependent Claim
17 words
The method of claim 4 wherein the interface exposing and the first plasma treating are conducted together.
Claim 11
Dependent Claim
14 words
The method claim 4 wherein the interface exposing transforms the interface into titanium silicide.
Claim 12
Dependent Claim
35 words
The method of claim 4 wherein the interface exposing transforms the interface into titanium silicide, the exposing transforming less than or equal to one half of a thickness of the first layer to titanium silicide.
Claim 13
Independent Claim
273 words
A method of forming an electrical contact to a substrate comprising the following steps: providing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; chemical vapor depositing a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon therein, the first layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the first layer, injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon; after depositing the first layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; after the first plasma treatment, depositing a second layer comprising titanium nitride over the first layer to a second thickness, the second layer of titanium nitride having incorporated carbon therein; and after depositing the second layer, injecting a second component gas into the reactor and generating a second plasma from the second component gas within the reactor and against the second layer, the second component gas and second plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited second layer to remove carbon.
Claim 14
Independent Claim
273 words
A method of forming an electrical contact to a substrate comprising the following steps: providing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; chemical vapor depositing a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon therein, the first layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the first layer, injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon; after depositing the first layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; after the first plasma treatment, depositing a second layer comprising titanium nitride over the first layer to a second thickness, the second layer of titanium nitride having incorporated carbon therein; and after depositing the second layer, injecting a second component gas into the reactor and generating a second plasma from the second component gas within the reactor and against the second layer, the second component gas and second plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited second layer to remove carbon.
Claim 15
Dependent Claim
39 words
The method of forming an electrical contact to a substrate of claim 11 wherein the activated state component effectively diffuses into the first layer and interacts with the deposited first layer component to remove carbon from the first layer.
Claim 16
Dependent Claim
56 words
The method of forming an electrical contact to a substrate of claim 11 wherein the activated state component comprises a component which is chemically reactive with the first layer component, the activated state component effectively diffusing into the first layer and chemically reacting with the deposited first layer component to remove carbon from the first layer.
Claim 17
Dependent Claim
23 words
The method of forming an electrical contact to a substrate of claim 11 wherein the second thickness is greater than the first thickness.
Claim 18
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 11 wherein the first thickness is less than or equal to 100 Angstroms.
Claim 19
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 11 wherein the first thickness is less than or equal to 50 Angstroms.
Claim 20
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 11 wherein the second thickness is greater than or equal to 150 Angstroms.
Claim 21
Dependent Claim
37 words
The method of forming an electrical contact to a substrate of claim 11 wherein the first thickness is less than or equal to 100 Angstroms, and the second thickness is greater than or equal to 150 Angstroms.
Claim 22
Dependent Claim
37 words
The method of forming an electrical contact to a substrate of claim 11 wherein the first thickness is less than or equal to 50 Angstroms, and the second thickness is greater than or equal to 150 Angstroms.
Claim 23
Dependent Claim
30 words
The method of forming an electrical contact to a substrate of claim 11 wherein the interface exposing step and the first plasma treating step are conducted in the same step.
Claim 24
Dependent Claim
40 words
The method of forming an electrical contact to a substrate of claim 11 wherein the interface exposing step and the first plasma treating step are conducted in the same step; and the second thickness is greater than the first thickness.
Claim 25
Dependent Claim
42 words
The method of forming an electrical contact to a substrate of claim 11 wherein the interface exposing step and the first plasma treating step are conducted in the same step; and the first thickness is less than or equal to 100 Angstroms.
Claim 26
Dependent Claim
24 words
The method of forming an electrical contact to a substrate of claim 11 wherein the interface exposing step transforms the interface into titanium silicide.
Claim 27
Dependent Claim
49 words
The method of forming an electrical contact to a substrate of claim 11 wherein the interface exposing step transforms the interface into titanium silicide, the exposing step transforming less than or equal to one half of the first thickness of the first layer over the node to titanium silicide.
Claim 28
Dependent Claim
65 words
The method of forming an electrical coctact to a substrate of claim 11 wherein the interface exposing step transforms the interface into titanium silicide, the exposing step and the first plasma treating step being conducted in the same step, and the exposing step transforming less than or equal to one half of the first thickness of the first layer over the node to titanium silicide.
Claim 29
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 11 wherein the first and second component gases comprise hydrogen and nitrogen atoms.
Claim 30
Dependent Claim
26 words
The method of forming an electrical contact to a substrate of claim 11 further comprising plasma cleaning the node prior to provision of the first layer.
Claim 31
Independent Claim
166 words
A method of forming an electrical contact to a substrate comprising the following steps: placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; depositing a layer comprising titanium nitride onto the substrate over the node to a first thickness, the layer of titanium nitride having incorporated carbon therein, the layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the layer, injecting a component gas into the reactor and generating a plasma from the component gas within the reactor and against the layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited layer to remove carbon; and after depositing the layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance.
Claim 32
Independent Claim
166 words
A method of forming an electrical contact to a substrate comprising the following steps: placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor; depositing a layer comprising titanium nitride onto the substrate over the node to a first thickness, the layer of titanium nitride having incorporated carbon therein, the layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the layer, injecting a component gas into the reactor and generating a plasma from the component gas within the reactor and against the layer, the component gas and plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited layer to remove carbon; and after depositing the layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance.
Claim 33
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 28 wherein the first thickness is less than or equal to 100 Angstroms.
Claim 34
Dependent Claim
25 words
The method of forming an electrical contact to a substrate of claim 28 wherein the first thickness is less than or equal to 50 Angstroms.
Claim 35
Dependent Claim
29 words
The method of forming an electrical contact to a substrate of claim 28 wherein the interface exposing step and the plasma treating step are conducted in the same step.
Claim 36
Dependent Claim
24 words
The method of forming an electrical contact to a substrate of claim 28 wherein the interface exposing step transforms the interface into titanium silicide.
Claim 37
Dependent Claim
45 words
The method of forming an electrical contact to a substrate of claim 28 wherein the interface exposing step transforms the interface into titanium silicide, the exposing step transforming less than or equal to one half of the first thickness of the layer to titanium silicide.
Claim 38
Dependent Claim
60 words
The method of forming an electrical contact to a substrate of claim 28 wherein the interface exposing step transforms the interface into titanium silicide, the exposing step and the plasma treating step being conducted in the same step, and the exposing step transforming less than or equal to one half of the first thickness of the layer to titanium silicide.
Claim 39
Independent Claim
384 words
A method of forming an electrical contact to a substrate comprising the following steps: placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor, the substrate comprising bulk monocrystalline silicon and the node comprising a diffusion region; injecting a first titanium organometallic precursor to within the reactor having the substrate positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon from the first titanium organometallic precursor, the first layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the first layer, ceasing to inject the first titanium organometallic precursor into the reactor and first injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer; after depositing the first layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; after the first plasma treatment, injecting a second titanium organometallic precursor to within the reactor, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a second layer comprising titanium nitride over the first layer to a second thickness, the second layer of titanium nitride having incorporated carbon from the second titanium organometallic precursor; and after depositing the second layer, ceasing to inject the second titanium organometallic precursor into the reactor and second injecting a second component gas into the reactor and generating a second plasma from the second component gas within the reactor against the first layer, the second component gas and second plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited second layer to remove carbon from the second layer.
Claim 40
Independent Claim
384 words
A method of forming an electrical contact to a substrate comprising the following steps: placing a substrate having a silicon node to which electrical connection is to be made within a chemical vapor deposition reactor, the substrate comprising bulk monocrystalline silicon and the node comprising a diffusion region; injecting a first titanium organometallic precursor to within the reactor having the substrate positioned therein, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a first layer comprising titanium nitride onto the substrate over the node to a first thickness, the first layer of titanium nitride having incorporated carbon from the first titanium organometallic precursor, the first layer and silicon node defining a contact interface therebetween having a first electrical resistance; after depositing the first layer, ceasing to inject the first titanium organometallic precursor into the reactor and first injecting a first component gas into the reactor and generating a first plasma from the first component gas within the reactor against the first layer, the first component gas and first plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited first layer to remove carbon from the first layer; after depositing the first layer, exposing the interface of the titanium nitride and silicon node to conditions effective to transform such interface to a second electrical resistance which is lower than the first electrical resistance; after the first plasma treatment, injecting a second titanium organometallic precursor to within the reactor, and maintaining the reactor at a temperature and a pressure which in combination are effective to deposit a second layer comprising titanium nitride over the first layer to a second thickness, the second layer of titanium nitride having incorporated carbon from the second titanium organometallic precursor; and after depositing the second layer, ceasing to inject the second titanium organometallic precursor into the reactor and second injecting a second component gas into the reactor and generating a second plasma from the second component gas within the reactor against the first layer, the second component gas and second plasma generated therefrom having a component which is effective when in an activated state to interact with a component of the deposited second layer to remove carbon from the second layer.
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