US6329670B1
Expired / Lapsed
US
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Conductive material for integrated circuit fabrication
Assignee: Aptina Imaging Corp
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Filing: 1999-04-06
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Granted: 2001-12-11
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Expires: 2019-04-06
Abstract
Abstract A conductive composition of titanium boronitride (TiB x N y ) is disclosed for use as a conductive material. The titanium boronitride is used as conductive material in the testing and fabrication of integrated circuits. For example, the titanium boronitride is used to construct contact pads such as inline pads, backend pads, sensors or probes. Advantages of embodiments of the titanium boronitride include reduced scratching, increased hardness, finer granularity, thermal stability, good adhesion, and low bulk resistivity. Exemplary methods of creating the titanium boronitride include a sputtering process and a plasma anneal process.
Inventors
- 👤 Yungjun Jeff Hu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:34
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; G; G01; G01R; G01R31/00; G01R31/28; G01R31/2851; G01R31/2884; H10P; H10P74/00; H10P74/27; H10P74/273; H10W20/047; H10W20/048; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10W72/00; H10W72/90
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
127 words
A test pad fabricated in a semiconductor, the test pad comprising: a substrate; a metal layer; a first dielectric layer above the metal layer; a plug in the first dielectric layer, the plug in communication with the metal layer; an aluminum layer in communication with the plug wherein the aluminum layer is above the plug; a TiB x N y layer in communication with the aluminum layer wherein the TiB x N y layer is above the aluminum layer, the TiB x N y having an x-factor between about 0.5 and 2 and a y-factor between about 0.2 and 2; and a second dielectric layer above the TiB x N y layer wherein the second dielectric layer is etched to expose the TiB x N y layer.
Claim 2
Dependent Claim
127 words
A test pad fabricated in a semiconductor, the test pad comprising: a substrate; a metal layer; a first dielectric layer above the metal layer; a plug in the first dielectric layer, the plug in communication with the metal layer; an aluminum layer in communication with the plug wherein the aluminum layer is above the plug; a TiB x N y layer in communication with the aluminum layer wherein the TiB x N y layer is above the aluminum layer, the TiB x N y having an x-factor between about 0.5 and 2 and a y-factor between about 0.2 and 2; and a second dielectric layer above the TiB x N y layer wherein the second dielectric layer is etched to expose the TiB x N y layer.
Claim 3
Dependent Claim
14 words
The test pad of claim 1 , wherein the substrate comprises an integrated circuit.
Claim 4
Dependent Claim
16 words
The test pad of claim 1 , wherein the substrate comprises a dynamic random access memory.
Claim 5
Dependent Claim
18 words
The test pad of claim 1 , wherein the substrate comprises one or more semiconductor layers or structures.
Claim 6
Dependent Claim
17 words
The test pad of claim 1 , wherein the substrate comprises an intrinsically doped monocrystalline silicon wafer.
Claim 7
Dependent Claim
16 words
The test pad of claim 1 , wherein the substrate comprises operable portions of semiconductor devices.
Claim 8
Dependent Claim
15 words
The test pad of claim 1 , wherein the first dielectric layer is silicon oxide.
Claim 9
Dependent Claim
14 words
The test pad of claim 1 , wherein the first dielectric layer is nitride.
Claim 10
Dependent Claim
20 words
The test pad of claim 1 , wherein the TiB x N y layer has a hardness of 50 Gpa.
Claim 11
Dependent Claim
27 words
The test pad of claim 1 , wherein the TiB x N y layer has a bulk resistivity of approximately 40 to 300 microohm per centimeter (μΩcm).
Claim 12
Dependent Claim
23 words
The test pad of claim 1 , wherein the TiB x N y layer has a bulk resistivity of less than 100 μΩcm.
Claim 13
Dependent Claim
25 words
The test pad of claim, 1 , wherein the TiB x N y layer has a thermal stability of up to approximately 1,500 degrees centigrade.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2004-12-10 | 2005-06-11 | 2005-12-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2008-12-10 | 2009-06-11 | 2009-12-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2012-12-10 | 2013-06-11 | 2013-12-11 | $7700.00 | Window Closed / Lapsed |