US6086442A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming field emission devices
Assignee: Micron Technology Inc
•
Filing: 1999-03-01
•
Granted: 2000-07-11
•
Expires: 2019-03-01
Abstract
Abstract The invention comprises methods of forming field emission devices. In but one implementation, a method of forming a field emission device includes forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters. The extraction grid is supported and spaced from the emitters by an insulative mass. An electrically conductive layer is substantially selectively deposited over the grid and emitters relative to the insulative mass. After the depositing, the electron emission substrate is joined with an electron collector substrate. In one implementation, a method of forming a field emission device includes depositing an electrically conductive layer over the grid and emitters, with the depositing forming the electrically conductive layer over at least some exposed surfaces of the insulative mass. The conductive layer is etched away from the insulative mass while leaving at least a portion of the conductive layer remaining over outermost portions of the emitters. After the etching, the electron emission substrate is joined with an electron collector substrate. In one implementation, an electrically conductive layer is deposited over the grid and emitters. Only a portion of the electrically conductive layer is etched away from the grid and emitters after the depositing. After the etching, the electron emission substrate is joined with an electron collector substrate.
Inventors
- 👤 Gurtej S. Sandhu
- 👤 Sujit Sharan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 01:25
CPC Classifications
H; H01; H01J; H01J9/00; H01J9/02; H01J9/022; H01J9/025
Claims Analysis
Total Claims: 43
Claim 1
Independent Claim
74 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; substantially selectively chemical vapor depositing an electrically conductive layer over the grid and emitters relative to the insulative mass; and after the depositing, joining the electron emission substrate with an electron collector substrate.
Claim 2
Independent Claim
74 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; substantially selectively chemical vapor depositing an electrically conductive layer over the grid and emitters relative to the insulative mass; and after the depositing, joining the electron emission substrate with an electron collector substrate.
Claim 3
Dependent Claim
12 words
The method of claim 1 wherein the substantially selective depositing comprises PECVD.
Claim 4
Dependent Claim
24 words
The method of claim 1 wherein the substantially selective depositing comprises PECVD, and the electrically conductive layer comprises an elemental metal or metal alloy.
Claim 5
Dependent Claim
42 words
The method of claim 1 wherein the emitters comprise silicon, the substantially selective depositing comprises PECVD, and the electrically conductive layer comprises a metal silicide formed in situ during the depositing from reaction of deposited metal and silicon material of the emitter.
Claim 6
Dependent Claim
14 words
The method of claim 1 wherein the substantially selective depositing is not plasma enhanced.
Claim 7
Dependent Claim
37 words
The method of claim 1 wherein the electrically conductive layer comprises a metal silicide, and the substantially selective depositing comprises LPCVD at a temperature of at least 650° C. comprising metal tetrahalide and silicon comprising source gases.
Claim 8
Dependent Claim
14 words
The method of claim 6 wherein the silicon comprising source gas comprises a silane.
Claim 9
Dependent Claim
16 words
The method of claim 6 wherein the silicon comprising source gas comprises an organic silicon compound.
Claim 10
Dependent Claim
30 words
The method of claim 6 wherein the silicon comprising source gas comprises a silicon compound present in at least a 2:1 ratio by volume as compared to the metal tetrahalide.
Claim 11
Dependent Claim
13 words
The method of claim 9 wherein the ratio is no greater than 10:1.
Claim 12
Dependent Claim
17 words
The method of claim 1 wherein the electrically conductive layer comprises an elemental metal or metal alloy.
Claim 13
Dependent Claim
13 words
The method of claim 1 wherein the electrically conductive layer comprises elemental titanium.
Claim 14
Dependent Claim
14 words
The method of claim 1 wherein the electrically conductive layer comprises a metal compound.
Claim 15
Dependent Claim
14 words
The method of claim 1 wherein the electrically conductive layer comprises a metal silicide.
Claim 16
Dependent Claim
26 words
The method of claim 1 further comprising after the depositing and before the joining, etching only a portion of the electrically conductive layer from the emitters.
Claim 17
Dependent Claim
27 words
The method of claim 1 further comprising after the depositing and before the joining, etching only a portion of the electrically conductive layer from the extraction grid.
Claim 18
Dependent Claim
26 words
The method of claim 16 further comprising after the depositing and before the joining, etching only a portion of the electrically conductive layer from the emitters.
Claim 19
Dependent Claim
20 words
The method of claim 16 further comprising nitridizing the electrically conductive layer after the etching and prior to the joining.
Claim 20
Dependent Claim
44 words
The method of claim 1 wherein the substantially selective depositing forms the electrically conductive layer over at least some exposed surfaces of the insulative mass, and further comprising after the depositing and before the joining, etching the conductive layer away from the insulative mass.
Claim 21
Dependent Claim
20 words
The method of claim 1 wherein the substantially selective depositing forms none of the conductive layer on the insulative mass.
Claim 22
Dependent Claim
16 words
The method of claim 1 further comprising nitridizing the electrically conductive layer prior to the joining.
Claim 23
Independent Claim
83 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; depositing an electrically conductive layer over the grid and emitters; etching only a portion of the electrically conductive layer away from the grid and emitters after the depositing; and after the etching, joining the electron emission substrate with an electron collector substrate.
Claim 24
Independent Claim
83 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; depositing an electrically conductive layer over the grid and emitters; etching only a portion of the electrically conductive layer away from the grid and emitters after the depositing; and after the etching, joining the electron emission substrate with an electron collector substrate.
Claim 25
Dependent Claim
11 words
The method of claim 22 wherein the etching comprises wet etching.
Claim 26
Dependent Claim
11 words
The method of claim 22 wherein the etching comprises dry etching.
Claim 27
Dependent Claim
35 words
The method of claim 22 wherein the depositing comprises CVD in a chamber, and the etching comprises dry etching in the chamber without removing the substrate from the chamber between the depositing and the etching.
Claim 28
Dependent Claim
20 words
The method of claim 22 further comprising nitridizing the electrically conductive layer after the etching and prior to the joining.
Claim 29
Independent Claim
108 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; depositing an electrically conductive layer over the grid and emitters, the depositing forming the electrically conductive layer over at least some exposed surfaces of the insulative mass; etching the conductive layer away from the insulative mass while leaving at least a portion of the conductive layer remaining over outermost portions of the emitters; and after the etching, joining the electron emission substrate with an electron collector substrate.
Claim 30
Independent Claim
108 words
A method of forming a field emission device comprising: forming an electron emission substrate comprising emitters and an electrically conductive extraction grid formed outwardly of the emitters, the extraction grid being supported and spaced from the emitters by an insulative mass; depositing an electrically conductive layer over the grid and emitters, the depositing forming the electrically conductive layer over at least some exposed surfaces of the insulative mass; etching the conductive layer away from the insulative mass while leaving at least a portion of the conductive layer remaining over outermost portions of the emitters; and after the etching, joining the electron emission substrate with an electron collector substrate.
Claim 31
Dependent Claim
20 words
The method of claim 27 further comprising nitridizing the electrically conductive layer after the etching and prior to the joining.
Claim 32
Dependent Claim
22 words
The method of claim 27 wherein the etching leaves at least a portion of the conductive layer remaining over the extraction grid.
Claim 33
Dependent Claim
11 words
The method of claim 27 wherein the etching comprises wet etching.
Claim 34
Dependent Claim
11 words
The method of claim 27 wherein the etching comprises dry etching.
Claim 35
Dependent Claim
35 words
The method of claim 27 wherein the depositing comprises CVD in a chamber, and the etching comprises dry etching in the chamber without removing the substrate from the chamber between the depositing and the etching.
Claim 36
Dependent Claim
10 words
The method of claim 32 wherein the depositing comprises PECVD.
Claim 37
Dependent Claim
22 words
The method of claim 32 wherein the etching leaves at least a portion of the conductive layer remaining over the extraction grid.
Claim 38
Dependent Claim
17 words
The method of claim 27 wherein the electrically conductive layer comprises an elemental metal or metal alloy.
Claim 39
Dependent Claim
13 words
The method of claim 27 wherein the electrically conductive layer comprises elemental titanium.
Claim 40
Dependent Claim
14 words
The method of claim 27 wherein the electrically conductive layer comprises a metal compound.
Claim 41
Dependent Claim
14 words
The method of claim 27 wherein the electrically conductive layer comprises a metal silicide.
Claim 42
Dependent Claim
18 words
The method of claim 27 further comprising nitridizing the conductive layer after the depositing and before the etching.
Claim 43
Dependent Claim
14 words
The method of claim 27 further comprising nitridizing the conductive layer after the etching.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2003-07-11 | 2004-01-10 | 2004-07-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2007-07-11 | 2008-01-10 | 2008-07-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2011-07-11 | 2012-01-10 | 2012-07-11 | $7700.00 | Window Closed / Lapsed |