US5401676A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a silicon field emission device
Assignee: Samsung SDI Co Ltd
•
Filing: 1993-08-30
•
Granted: 1995-03-28
•
Expires: 2013-08-30
Abstract
Abstract A method is disclosed for making a silicon emission emitter for use as electron sources for various display elements, light sources, high-speed switching devices, and micro-sensors. The method relates to the formation of a tip portion of an emitter and an electron range by using a silicide material having a high melting point and a low work function. The emitter tip and electron range formed by the silicide material is a predetermined distance away from an oxide film, therefore, the emission characteristic of the emitter is efficiently strengthened, and the leakage current is, thereby, reduced due to the prevention of the metallic contamination to the insulating layers.
Inventors
- 👤 Kang-ok Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 13:28
CPC Classifications
H; H01; H01J; H01J1/00; H01J1/02; H01J1/30; H01J1/304; H01J9/00; H01J9/02; H01J9/022; H01J9/025; H01J2201/00; H01J2201/30; H01J2201/304; H01J2201/30403; H01J2201/30426; H01J2209/00; H01J2209/02; H01J2209/022; H01J2209/0223; H01J2209/0226
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
133 words
A method for forming a silicon field emission emitter comprising the steps of: forming oxide masks by photo etching after thermal oxidation of a silicon substrate; carrying out dry etching of the silicon substrate and a sharpening oxidation process to form a cone shaped emitter with a point centered; etching the oxide layer and said masks; depositing multi-insulating layers on said substrate and upper portion of the emitter; etching, in multi-stages, the insulating layers on the emitter to expose said cone shaped emitter; depositing a metal for forming a gate electrode on said insulating layers and a thin metal film on the tip of the emitter by electron beam evaporation inclined less than 45 degrees against a horizontal level; and annealing to form a metal silicide layer on the tip of the emitter.
Claim 2
Independent Claim
133 words
A method for forming a silicon field emission emitter comprising the steps of: forming oxide masks by photo etching after thermal oxidation of a silicon substrate; carrying out dry etching of the silicon substrate and a sharpening oxidation process to form a cone shaped emitter with a point centered; etching the oxide layer and said masks; depositing multi-insulating layers on said substrate and upper portion of the emitter; etching, in multi-stages, the insulating layers on the emitter to expose said cone shaped emitter; depositing a metal for forming a gate electrode on said insulating layers and a thin metal film on the tip of the emitter by electron beam evaporation inclined less than 45 degrees against a horizontal level; and annealing to form a metal silicide layer on the tip of the emitter.
Claim 3
Dependent Claim
34 words
Method for forming a silicon field emission emitter as claimed in claim 1, wherein said multi-insulating layers are formed having a three stage structure of polyimide, SiO 2 and Si 3 N 4 .
Claim 4
Dependent Claim
27 words
Method for forming a silicon field emission emitter as claimed in claim 2, wherein the thickness of said Si 3 N 4 is 1000 to 2200 angstroms.
Claim 5
Dependent Claim
26 words
Method for forming a silicon field emission emitter as claimed in claim 1, wherein the inclination of the metal deposition angle is 25 to 30 degrees.
References Cited (Backward Citations)
US3755704A
Cited
US3669241A
Cited
US3998678A
Cited
US3970887A
Cited
US4964946A
Cited
US5188977A
Cited
US5229331A
Cited
US5186670A
Cited
US5259799A
Cited
US5232549A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1998-03-27 | 1998-09-26 | 1999-03-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2002-03-27 | 2002-09-26 | 2003-03-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2006-03-27 | 2006-09-26 | 2007-03-28 | $7700.00 | Window Closed / Lapsed |