US6664192B2
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
Assignee: Imec
•
Filing: 2002-04-15
•
Granted: 2003-12-16
•
Expires: 2022-04-15
Abstract
Abstract Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be "bottomless," thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.
Inventors
- 👤 Alessandra Satta
- 👤 Karen Maex
- 👤 Kai-Erik Elers
- 👤 Ville Antero Saanila
- 👤 Pekka Juha Soininen
- 👤 Suvi P. Haukka
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:55
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; C; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/04; C23C16/045; C23C16/06; C23C16/08; C23C16/22; C23C16/30; C23C16/32; C23C16/44; C23C16/455; C23C16/45523; C23C16/45525; C30; C30B; C30B25/00; C30B25/02; C30B29/00; C30B29/02; C30B29/10; C30B29/36; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10P14/432; H10W20/031; H10W20/032; H10W20/033; H10W20/034; H10W20/042; H10W20/045; H10W20/056; H10W20/074; H10W20/076; H10W20/084; H10W20/40; H10W20/41; H10W20/42; H10W20/425; H10W20/44; H10W20/4403; H10W20/4432; H10W20/45; H10W20/47; H10W20/48
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
80 words
A method of selectively depositing a layer using an atomic layer deposition (ALD) process, the method comprising: providing a deposition substrate comprising a first surface and a second surface, the first and second surfaces having different material compositions; conditioning the first surface for subsequent ALD reactions; and selectively coating over the first surface as compared to the second surface by repeatedly alternating exposure of the deposition substrate to at least two reactant fluids, each alternating exposure having a self-limiting effect.
Claim 2
Independent Claim
80 words
A method of selectively depositing a layer using an atomic layer deposition (ALD) process, the method comprising: providing a deposition substrate comprising a first surface and a second surface, the first and second surfaces having different material compositions; conditioning the first surface for subsequent ALD reactions; and selectively coating over the first surface as compared to the second surface by repeatedly alternating exposure of the deposition substrate to at least two reactant fluids, each alternating exposure having a self-limiting effect.
Claim 3
Dependent Claim
25 words
The method of claim 1 , wherein the first material comprises an insulating material that is selectively coated and the second material comprises a conductor.
Claim 4
Dependent Claim
33 words
The method of claim 2 , wherein the first surface defines an opening in an insulating layer within an integrated circuit and the second surface comprises a metal element exposed by the opening.
Claim 5
Dependent Claim
18 words
The method of claim 2 , wherein selectively coating comprises depositing a barrier material over the insulating material.
Claim 6
Dependent Claim
21 words
The method of claim 4 , wherein the barrier material is conductive and has a resistivity less than about 300 μΩ-cm.
Claim 7
Dependent Claim
14 words
The method of claim 4 , wherein the barrier material comprises a metal nitride.
Claim 8
Dependent Claim
13 words
The method of claim 6 , wherein the barrier material comprises titanium nitride.
Claim 9
Dependent Claim
13 words
The method of claim 4 , wherein the barrier material is an insulator.
Claim 10
Dependent Claim
16 words
The method of claim 1 , wherein conditioning comprises forming ligands selectively on the first surface.
Claim 11
Dependent Claim
28 words
The method of claim 9 , wherein conditioning comprises forming ligands on the first surface and the second surface and subsequently modifying the ligands on the second surface.
Claim 12
Dependent Claim
18 words
The method of claim 10 , wherein modifying the ligands comprises converting the ligands into a growth-blocking layer.
Claim 13
Dependent Claim
19 words
The method of claim 10 , wherein modifying the ligands comprises removing the ligands selectively from the second surface.
Claim 14
Dependent Claim
15 words
The method of claim 12 , wherein removing the ligands selectively comprises heating the substrate.
Claim 15
Dependent Claim
20 words
The method of claim 13 , wherein removing the ligands selectively further comprises exposing the substrate to a reducing ambient.
Claim 16
Dependent Claim
19 words
The method of claim 13 , wherein removing the ligands selectively further comprises subjecting the substrate to a vacuum.
Claim 17
Dependent Claim
19 words
The method of claim 13 , wherein removing the ligands selectively further comprises subjecting the substrate to high pressure.
Claim 18
Dependent Claim
15 words
The method of claim 12 , wherein removing the ligands selectively comprises a chemical reduction.
Claim 19
Dependent Claim
15 words
The method of claim 12 , wherein removing the ligands comprises cleaning the second surface.
Claim 20
Dependent Claim
14 words
The method of claim 1 , wherein conditioning comprises exposing the substrate to moisture.
Claim 21
Dependent Claim
29 words
The method of claim 1 , wherein the first surface comprises a form of oxide and conditioning comprises exposing the substrate to a source of H or OH radicals.
Claim 22
Dependent Claim
36 words
The method of claim 1 , wherein conditioning comprises forming ligands on the first surface selected from the group consisting of hydroxyl, cyano, NH 2 , NH, fluoro, bromo, iodo, chloro, methyl, alkoxo, β-diketonato and isopropoxo.
Claim 23
Dependent Claim
23 words
The method of claim 1 , wherein conditioning comprising forming a sacrificial layer over the second surface prior to coating the first surface.
Claim 24
Dependent Claim
25 words
The method of claim 22 , wherein the sacrificial layer comprises a material susceptible to etching from exposure to the at least two reactant fluids.
Claim 25
Dependent Claim
47 words
The method of claim 1 , wherein providing comprises plasma etching an opening in an insulating layer to expose a metallic element, thereby producing the first surface on the insulating layer with conditioning ligands thereupon and the second surface on the metallic element without conditioning ligands thereupon.
Claim 26
Independent Claim
65 words
A method of selectively forming a layer over insulating surfaces of a partially fabricated integrated circuit having exposed insulating surfaces and conductive surfaces, comprising: selectively conditioning the insulating surfaces of the partially fabricated integrated circuit, relative to the conductive surfaces; and alternatingly introducing vapor-phase reactants to selectively deposit a material over the insulating surfaces, relative to the conductive surfaces, in an atomic layer deposition process.
Claim 27
Independent Claim
65 words
A method of selectively forming a layer over insulating surfaces of a partially fabricated integrated circuit having exposed insulating surfaces and conductive surfaces, comprising: selectively conditioning the insulating surfaces of the partially fabricated integrated circuit, relative to the conductive surfaces; and alternatingly introducing vapor-phase reactants to selectively deposit a material over the insulating surfaces, relative to the conductive surfaces, in an atomic layer deposition process.
Claim 28
Dependent Claim
22 words
The method of claim 25 , wherein selectively conditioning comprises forming ligands over the insulating surfaces while leaving the conductive surfaces exposed.
Claim 29
Dependent Claim
29 words
The method of claim 26 , wherein the insulating surfaces define a contact via and the conductive surfaces include a metallic layer exposed at the bottom of the via.
Claim 30
Dependent Claim
30 words
The method of claim 26 , wherein the ligands are selected from the group consisting of hydroxyl, cyano, NH 2 , NH, fluoro, bromo, iodo, chloro, methyl, alkoxo, β-diketonato, isopropoxo.
Claim 31
Dependent Claim
18 words
The method of claim 26 , wherein selectively conditioning further comprises removing the ligands from the conductive surfaces.
Claim 32
Dependent Claim
12 words
The method of claim 29 , wherein removing the ligands comprises reducing.
Claim 33
Dependent Claim
16 words
The method of claim 26 , wherein forming ligands comprises exposing the insulating surfaces to moisture.
Claim 34
Dependent Claim
13 words
The method of claim 26 , wherein forming ligands comprises forming hydroxyl tails.
References Cited (Backward Citations)
US4058430A
Cited
US4413022A
Cited
US4747367A
Cited
US4761269A
Cited
US6093683A
Cited
WO1996017107A1
Cited
US5711811A
Cited
US5674781A
Cited
DE19627017A1
Cited
US5916365A
Cited
US6200839B1
Cited
US6225213B1
Cited
US5904565A
Cited
US6287965B1
Cited
US6100184A
Cited
US5879459A
Cited
US6139700A
Cited
DE19820147A1
Cited
US5933761A
Cited
WO1999041423A2
Cited
US6048790A
Cited
US6270572B1
Cited
US6083818A
Cited
US6188134B1
Cited
US6077775A
Cited
US6358829B2
Cited
KR20000059470A
Cited
US6200893B1
Cited
US6207567B1
Cited
US6391785B1
Cited
US6203613B1
Cited
US6184128B1
Cited
US20010034123A1
Cited
US6368954B1
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2006-12-15 | 2007-06-16 | 2007-12-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2010-12-15 | 2011-06-16 | 2011-12-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2014-12-15 | 2015-06-16 | 2015-12-16 | $7700.00 | Window Closed / Lapsed |