US6753271B2
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Atomic layer deposition methods
Assignee: Round Rock Research LLC
•
Filing: 2002-08-15
•
Granted: 2004-06-22
•
Expires: 2022-08-15
Abstract
Abstract The invention includes an atomic layer deposition method of forming a layer of a deposited composition on a substrate. The method includes positioning a semiconductor substrate within an atomic layer deposition chamber. On the substrate, an intermediate composition monolayer is formed, followed by a desired deposited composition from reaction with the intermediate composition, collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber. A material adheres to a chamber internal component surface from such sequentially forming. After such sequentially forming, a reactive gas flows to the chamber which is different in composition from the multiple different deposition precursors and which is effective to react with such adhering material. After the reactive gas flowing, such sequentially forming is repeated. Further implementations are contemplated.
Inventors
- 👤 Demetrius Sarigiannis
- 👤 Garo J. Derderian
- 👤 Cem Basceri
- 👤 Gurtej S. Sandhu
- 👤 F. Daniel Gealy
- 👤 Chris M. Carlson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:54
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; C; C23; C23C; C23C16/00; C23C16/44; C23C16/4401; C23C16/4404; C23C16/4405; C23C16/455; C23C16/45523; C23C16/45525; C23C16/45527; C23C16/45531; C23C16/45534; H10P14/42; H10P14/43; H10P14/432; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/6939; H10P14/69391; H10P14/69394; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339
Claims Analysis
Total Claims: 52
Claim 1
Independent Claim
112 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material; and after the reactive gas flowing, repeating said sequentially forming.
Claim 2
Dependent Claim
112 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material; and after the reactive gas flowing, repeating said sequentially forming.
Claim 3
Dependent Claim
24 words
The method of claim 1 wherein the chamber internal component surface to which the material adheres at least comprises a wall of the chamber.
Claim 4
Dependent Claim
33 words
The method of claim 1 wherein the chamber internal component surface to which the material adheres at least comprises a surface of a chamber liner apparatus forming a deposition subchamber within the chamber.
Claim 5
Dependent Claim
34 words
The method of claim 1 wherein the chamber internal component surface to which the material adheres at least comprises a surface of a portion of a substrate support received internally of the chamber walls.
Claim 6
Dependent Claim
25 words
The method of claim 1 wherein the material also adheres to the substrate and the reactive gas reacts with such material adhering to the substrate.
Claim 7
Dependent Claim
32 words
The method of claim 1 wherein the material also adheres to the substrate and the reactive gas reacts with such material adhering to the substrate effective to remove it from the substrate.
Claim 8
Dependent Claim
46 words
The method of claim 1 wherein the material and intermediate composition are of a common composition relative one another; and the reactive gas is capable under conditions of the reactive gas flowing of reaction with, and does react with, the adhering material of the intermediate composition.
Claim 9
Dependent Claim
29 words
The method of claim 1 wherein the reactive gas reacts to modify composition of the adhering material, with such modified composition material adhering to the chamber internal component surface.
Claim 10
Dependent Claim
28 words
The method of claim 1 wherein the reactive gas reacts to effectively remove such material, and any reaction by-product thereof, from adhering to the chamber internal component surface.
Claim 11
Dependent Claim
16 words
The method of claim 1 comprising after repeating said sequentially forming, repeating said reactive gas flowing.
Claim 12
Dependent Claim
12 words
The method of claim 1 comprising repeating said sequentially forming multiple times.
Claim 13
Dependent Claim
27 words
The method of claim 1 comprising: repeating said sequentially forming multiple times; and repeating said reactive gas flowing only after a plurality of consecutive sequentially forming repetitions.
Claim 14
Dependent Claim
16 words
The method of claim 1 wherein the material is different in composition from the intermediate composition.
Claim 15
Dependent Claim
26 words
The method of claim 1 wherein the reactive gas is not capable under conditions of the reactive gas flowing of reaction with the desired deposited composition.
Claim 16
Dependent Claim
24 words
The method of claim 1 wherein the reactive gas is capable under conditions of the reactive gas flowing of reaction with the intermediate composition.
Claim 17
Dependent Claim
27 words
The method of claim 1 further comprising forming intermediate reaction by-product during formation of the intermediate composition monolayer, the material being different from all intermediate reaction by-product.
Claim 18
Dependent Claim
20 words
The method of claim 1 wherein the reactive gas flowing occurs prior to forming any further monolayer on the substrate.
Claim 19
Dependent Claim
13 words
The method of claim 1 wherein the reactive gas flowing is plasma enhanced.
Claim 20
Dependent Claim
19 words
The method of claim 1 wherein the reactive gas flowing is plasma enhanced by plasma generation within the chamber.
Claim 21
Dependent Claim
20 words
The method of claim 1 wherein the reactive gas flowing is plasma enhanced by plasma generation remote of the chamber.
Claim 22
Dependent Claim
24 words
The method of claim 1 wherein the material is derived at least primarily from a deposition precursor flow which forms the intermediate composition monolayer.
Claim 23
Dependent Claim
31 words
The method of claim 1 wherein the material is derived at least primarily from a deposition precursor flow which reacts with the intermediate composition monolayer and forms the desired deposited composition.
Claim 24
Dependent Claim
46 words
The method of claim 1 wherein the material is derived at least partially from a deposition precursor flow which forms the intermediate composition monolayer, and at least partially from a deposition precursor flow which reacts with the intermediate composition monolayer and forms the desired deposited composition.
Claim 25
Dependent Claim
13 words
The method of claim 1 wherein the reactive gas comprises Cl 2 .
Claim 26
Dependent Claim
13 words
The method of claim 1 wherein the reactive gas comprises O 2 .
Claim 27
Dependent Claim
13 words
The method of claim 1 wherein the reactive gas comprises H 2 .
Claim 28
Dependent Claim
32 words
The method of claim 1 wherein the different composition precursors comprise TiCl 4 and NH 3 , and the reactive gas comprises at least one of H 2 and Cl 2 .
Claim 29
Dependent Claim
11 words
The method of claim 1 wherein the material comprises oxygen atoms.
Claim 30
Dependent Claim
150 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material, the reactive gas not being capable under conditions of the reactive gas flowing of reaction with the desired deposited composition, the reactive gas being capable under conditions of the reactive gas flowing of reaction with the intermediate composition; and after the reactive gas flowing, repeating said sequentially forming.
Claim 31
Dependent Claim
150 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material, the reactive gas not being capable under conditions of the reactive gas flowing of reaction with the desired deposited composition, the reactive gas being capable under conditions of the reactive gas flowing of reaction with the intermediate composition; and after the reactive gas flowing, repeating said sequentially forming.
Claim 32
Dependent Claim
16 words
The method of claim 29 wherein the material is different in composition from the intermediate composition.
Claim 33
Dependent Claim
29 words
The method of claim 29 wherein the reactive gas reacts to modify composition of the adhering material, with such modified composition material adhering to the chamber internal component surface.
Claim 34
Dependent Claim
28 words
The method of claim 29 wherein the reactive gas reacts to effectively remove such material, and any reaction by-product thereof, from adhering to the chamber internal component surface.
Claim 35
Dependent Claim
16 words
The method of claim 29 comprising after repeating said sequentially forming, repeating said reactive gas flowing.
Claim 36
Dependent Claim
27 words
The method of claim 29 comprising: repeating said sequentially forming multiple times; and repeating said reactive gas flowing only after a plurality of consecutive sequentially forming repetitions.
Claim 37
Dependent Claim
27 words
The method of claim 29 further comprising forming intermediate reaction by-product during formation of the intermediate composition monolayer, the material being different from all intermediate reaction by-product.
Claim 38
Dependent Claim
13 words
The method of claim 29 wherein the reactive gas flowing is plasma enhanced.
Claim 39
Dependent Claim
19 words
The method of claim 29 wherein the reactive gas flowing is plasma enhanced by plasma generation within the chamber.
Claim 40
Dependent Claim
20 words
The method of claim 29 wherein the reactive gas flowing is plasma enhanced by plasma generation remote of the chamber.
Claim 41
Dependent Claim
24 words
The method of claim 29 wherein the material is derived at least primarily from a deposition precursor flow which forms the intermediate composition monolayer.
Claim 42
Dependent Claim
31 words
The method of claim 29 wherein the material is derived at least primarily from a deposition precursor flow which reacts with the intermediate composition monolayer and forms the desired deposited composition.
Claim 43
Dependent Claim
46 words
The method of claim 29 wherein the material is derived at least partially from a deposition precursor flow which forms the intermediate composition monolayer, and at least partially from a deposition precursor flow which reacts with the intermediate composition monolayer and forms the desired deposited composition.
Claim 44
Dependent Claim
160 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming and prior to forming any further monolayer on the substrate, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material, the reactive gas not being capable under conditions of the reactive gas flowing of reaction with the desired deposited composition, the reactive gas being capable under conditions of the reactive gas flowing of reaction with the intermediate composition; and after the reactive gas flowing, repeating said sequentially forming.
Claim 45
Dependent Claim
160 words
An atomic layer deposition method of forming a layer comprising a deposited composition on a substrate, comprising: positioning a semiconductor substrate within a deposition chamber; on the substrate, sequentially forming an intermediate composition monolayer then a desired deposited composition from reaction with the intermediate composition collectively from flowing multiple different composition deposition precursors to the substrate within the deposition chamber, a material adhering to a chamber internal component surface from said sequentially forming; after said sequentially forming and prior to forming any further monolayer on the substrate, flowing a reactive gas to the chamber which is different in composition from the multiple different deposition precursors effective to react with such adhering material, the reactive gas not being capable under conditions of the reactive gas flowing of reaction with the desired deposited composition, the reactive gas being capable under conditions of the reactive gas flowing of reaction with the intermediate composition; and after the reactive gas flowing, repeating said sequentially forming.
Claim 46
Dependent Claim
16 words
The method of claim 42 wherein the material is different in composition from the intermediate composition.
Claim 47
Dependent Claim
29 words
The method of claim 42 wherein the reactive gas reacts to modify composition of the adhering material, with such modified composition material adhering to the chamber internal component surface.
Claim 48
Dependent Claim
28 words
The method of claim 42 wherein the reactive gas reacts to effectively remove such material, and any reaction by-product thereof, from adhering to the chamber internal component surface.
Claim 49
Dependent Claim
16 words
The method of claim 42 comprising after repeating said sequentially forming, repeating said reactive gas flowing.
Claim 50
Dependent Claim
27 words
The method of claim 42 comprising: repeating said sequentially forming multiple times; and repeating said reactive gas flowing only after a plurality of consecutive sequentially forming repetitions.
Claim 51
Dependent Claim
27 words
The method of claim 42 further comprising forming intermediate reaction by-product during formation of the intermediate composition monolayer, the material being different from all intermediate reaction by-product.
Claim 52
Dependent Claim
13 words
The method of claim 42 wherein the reactive gas flowing is plasma enhanced.
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