US6696368B2
Expired / Lapsed
US
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Titanium boronitride layer for high aspect ratio semiconductor devices
Assignee: Micron Technology Inc
•
Filing: 2001-07-31
•
Granted: 2004-02-24
•
Expires: 2021-07-31
Abstract
Abstract Conductive contacts in a semiconductor structure, and methods for forming the conductive components are provided. The contacts are useful for providing electrical connection to active components beneath an insulation layer in integrated circuits such as memory devices. The conductive contacts comprise boron-doped TiCl 4 -based titanium nitride, and possess a sufficient level adhesion to the insulative layer to eliminate peeling from the sidewalls of the contact opening and cracking of the insulative layer when formed to a thickness of greater than about 200 angstroms.
Inventors
- 👤 Ammar Derraa
- 👤 Sujit Sharan
- 👤 Paul Castrovillo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 00:56
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10P; H10P14/00; H10P14/40; H10P14/42; H10P14/43; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/40
Claims Analysis
Total Claims: 161
Claim 1
Independent Claim
61 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and depositing titanium boronitride over the titanium silicide layer to form the conductive contact.
Claim 2
Independent Claim
61 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and depositing titanium boronitride over the titanium silicide layer to form the conductive contact.
Claim 3
Dependent Claim
18 words
The method of claim 1 , wherein the opening has an aspect ratio of about 3:1 or greater.
Claim 4
Dependent Claim
15 words
The method of claim 1 , wherein the opening is about 0.25 μm or less.
Claim 5
Dependent Claim
28 words
The method of claim 1 , wherein the conductive contact is selected from the group consisting of a local interconnect, contact, buried contact, via, plug, and filled trench.
Claim 6
Dependent Claim
19 words
The method of claim 1 , wherein the conductive contact has a thickness of about 200 angstroms or greater.
Claim 7
Dependent Claim
20 words
The method of claim 1 , wherein the conductive contact has a thickness of about 1000 to about 3000 angstroms.
Claim 8
Dependent Claim
31 words
The method of claim 1 , wherein the step of depositing the titanium boronitride layer is by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia and diborane.
Claim 9
Dependent Claim
45 words
The method of claim 7 , wherein the step of depositing the titanium boronitride layer is performed by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate.
Claim 10
Dependent Claim
48 words
The method of claim 7 , wherein the gaseous mixture comprises the diborane in an amount effective to provide the conductive contact with a level of boron such that the contact adheres to the sidewalls of the opening, with no substantial cracks being formed in the insulative layer.
Claim 11
Dependent Claim
32 words
The method of claim 7 , wherein the amount of diborane is effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 12
Dependent Claim
35 words
The method of claim 7 , wherein the gaseous mixture comprises the ammonia in an amount effective to provide the conductive contact with an effective amount of conductivity to an active area within the substrate.
Claim 13
Dependent Claim
16 words
The method of claim 11 , wherein the active area comprises a source or drain region.
Claim 14
Dependent Claim
64 words
The method of claim 1 , wherein the step of depositing the titanium boronitride layer comprises: depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; and depositing a layer of titanium nitride over the titanium boronitride layer to fill the opening; and repeating the foregoing steps to form a multi-layered film.
Claim 15
Dependent Claim
56 words
The method of claim 1 , wherein the step of depositing the titanium boronitride layer comprises depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film, the film comprising a titanium boronitride layer interposed between two titanium nitride layers.
Claim 16
Dependent Claim
46 words
The method of claim 14 , wherein the titanium boronitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate.
Claim 17
Dependent Claim
36 words
The method of claim 14 , wherein the titanium nitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia.
Claim 18
Dependent Claim
23 words
The method of claim 14 , wherein each of the layers of the multi-layered film are about 100 to about 500 angstroms thick.
Claim 19
Dependent Claim
28 words
The method of claim 1 , wherein the insulative layer comprises an oxide selected from the group consisting of silicon dioxide, phosphosilicate glass, borosilicate glass, and borophosphosilicate glass.
Claim 20
Dependent Claim
13 words
The method of claim 1 , wherein the insulative layer comprises borophosphosilicate glass.
Claim 21
Dependent Claim
28 words
The method of claim 1 , wherein the step of depositing the titanium silicide layer is by plasma enhanced chemical vapor deposition using a gas comprising titanium tetrachloride.
Claim 22
Dependent Claim
28 words
The method of claim 1 , wherein the step of depositing the titanium silicide layer comprises the steps of sputtering titanium onto the substrate, and annealing the titanium.
Claim 23
Dependent Claim
29 words
The method of claim 1 , wherein the step of depositing the titanium silicide layer is by a chemical vapor deposition using titanium tetrachloride and a silicon source gas.
Claim 24
Dependent Claim
23 words
The method of claim 22 , wherein the silicon source gas is selected from the group consisting of silane, dichlorosilane, and mixtures thereof.
Claim 25
Dependent Claim
23 words
The method of claim 1 , wherein the titanium silicide layer is formed to a thickness of about 250 to about 300 angstroms.
Claim 26
Dependent Claim
37 words
The method of claim 1 , further comprising, after the step of forming the titanium, boronitride layer, the step of removing an excess portion of the titanium nitride layer to form the conductive contact in the opening.
Claim 27
Dependent Claim
20 words
The method of claim 25 , wherein the step of removing the titanium boronitride layer is performed by chemical-mechanical polishing.
Claim 28
Independent Claim
63 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate; forming a layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the opening.
Claim 29
Independent Claim
63 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate; forming a layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the opening.
Claim 30
Dependent Claim
54 words
The method of claim 27 , wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 31
Dependent Claim
54 words
The method of claim 27 , wherein the step of forming the titanium boronitride layer comprises depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film wherein the titanium boronitride layer is disposed between titanium nitride layers.
Claim 32
Independent Claim
76 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and within the opening from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane by thermal chemical vapor deposition.
Claim 33
Independent Claim
76 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and within the opening from a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane by thermal chemical vapor deposition.
Claim 34
Dependent Claim
54 words
The method of claim 30 , wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 35
Independent Claim
122 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls and a bottom portion; the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening to form the conductive contact; wherein the conductive contact comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 36
Independent Claim
122 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls and a bottom portion; the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening to form the conductive contact; wherein the conductive contact comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 37
Independent Claim
89 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane.
Claim 38
Independent Claim
89 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane.
Claim 39
Dependent Claim
41 words
The method of claim 33 , wherein the titanium boronitride material is deposited by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the device.
Claim 40
Dependent Claim
61 words
The method of claim 33 , wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 41
Dependent Claim
38 words
The method of claim 34 , wherein the flow of diborane is effective to deposit an amount of boron such that the conductive contact has a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 42
Independent Claim
135 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying Silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 43
Independent Claim
135 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying Silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 44
Independent Claim
112 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; wherein the flow of diborane is effective to deposit an amount of boron such that the conductive contact has a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 45
Independent Claim
112 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer and into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia, and diborane; wherein the flow of diborane is effective to deposit an amount of boron such that the conductive contact has a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 46
Independent Claim
141 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer by chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane; wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 47
Independent Claim
141 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium boronitride material over the titanium silicide layer by chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane; wherein the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 48
Dependent Claim
38 words
The method of claim 39 , wherein the flow of diborane is effective to deposit an amount of boron such that the conductive contact has a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 49
Independent Claim
88 words
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having at least one contact opening formed therethrough to expose the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a layer comprising titanium silicide over the exposed substrate within the contact opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the contact opening.
Claim 50
Independent Claim
88 words
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having at least one contact opening formed therethrough to expose the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a layer comprising titanium silicide over the exposed substrate within the contact opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the contact opening.
Claim 51
Dependent Claim
19 words
The method of claim 41 , wherein the contact opening has a width of about 0.25 μm or less.
Claim 52
Independent Claim
107 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, and a titanium silicide layer overlying the substrate within the opening, the opening having sidewalls; and filling the opening with a titanium boronitride material; wherein the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 53
Independent Claim
107 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, and a titanium silicide layer overlying the substrate within the opening, the opening having sidewalls; and filling the opening with a titanium boronitride material; wherein the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 54
Dependent Claim
30 words
The method of claim 43 , wherein the conductive component comprises an amount of boron to provide a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 55
Independent Claim
105 words
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of: forming a titanium silicide layer over the substrate within the opening; and filling the opening with a titanium boronitride material; wherein the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 56
Independent Claim
105 words
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of: forming a titanium silicide layer over the substrate within the opening; and filling the opening with a titanium boronitride material; wherein the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 57
Dependent Claim
30 words
The method of claim 45 , wherein the conductive component comprises an amount of boron to provide a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 58
Independent Claim
72 words
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: flowing a gaseous mixture comprising titanium tetrachloride to deposit a layer of titanium silicide on the substrate; and flowing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane to deposit a layer comprising titanium boronitride over the titanium silicide layer.
Claim 59
Independent Claim
72 words
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: flowing a gaseous mixture comprising titanium tetrachloride to deposit a layer of titanium silicide on the substrate; and flowing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane to deposit a layer comprising titanium boronitride over the titanium silicide layer.
Claim 60
Dependent Claim
48 words
The method of claim 47 , wherein the titanium boronitride layer is deposited by chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia over the substrate, and about 100 to about 1000 sccm diborane over the substrate.
Claim 61
Dependent Claim
44 words
The method of claim 47 , wherein the gaseous mixture to form the titanium boronitride layer comprises the diborane in an amount effective to adhere the conductive contact to the sidewalls of the opening, with no substantial cracks being formed in the insulative layer.
Claim 62
Dependent Claim
42 words
The method of claim 47 , wherein the gaseous mixture to form the titanium boronitride layer comprises the diborane in an amount effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 63
Dependent Claim
37 words
The method of claim 47 , wherein the gaseous mixture to form the titanium boronitride layer comprises the ammonia in an amount effective to provide an effective amount of conductivity to an active area within the substrate.
Claim 64
Dependent Claim
44 words
The method of claim 47 , further comprising, prior to and after the step of flowing the gaseous mixture to deposit the titanium boronitride layer, the step of flowing a gaseous mixture comprising titanium tetrachloride and ammonia to deposit a layer comprising titanium nitride.
Claim 65
Independent Claim
151 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to expose the conductive area of the substrate, the opening having sidewalls; forming a seed layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the seed layer to fill the opening; whereby the titanium boronitride comprises an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer; and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level for an effective electrical contact with the conductive area.
Claim 66
Independent Claim
151 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to expose the conductive area of the substrate, the opening having sidewalls; forming a seed layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the seed layer to fill the opening; whereby the titanium boronitride comprises an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer; and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level for an effective electrical contact with the conductive area.
Claim 67
Independent Claim
95 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and forming a multi-layered fill over the titanium silicide layer by the steps of: depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; and depositing a layer of titanium nitride over the titanium boronitride layer.
Claim 68
Independent Claim
95 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and forming a multi-layered fill over the titanium silicide layer by the steps of: depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; and depositing a layer of titanium nitride over the titanium boronitride layer.
Claim 69
Dependent Claim
37 words
The method of claim 54 , further comprising repeating the steps of depositing the layers of titanium nitride and titanium boronitride to fill the opening such that the titanium boronitride layer is interposed between titanium nitride layers.
Claim 70
Independent Claim
93 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and forming a fill over the titanium silicide by depositing a layer of titanium nitride over the titanium silicide layer; and sequentially depositing overlying layers of titanium boronitride and titanium nitride to fill the opening, wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 71
Independent Claim
93 words
A method of forming a conductive contact in a semiconductor device comprising an opening through an insulative layer, the opening having sidewalls and extending to an underlying silicon-comprising substrate, the method comprising the steps of: depositing a layer comprising titanium silicide over the substrate within the opening; and forming a fill over the titanium silicide by depositing a layer of titanium nitride over the titanium silicide layer; and sequentially depositing overlying layers of titanium boronitride and titanium nitride to fill the opening, wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 72
Dependent Claim
18 words
The method of claim 56 , wherein the opening has an aspect ratio of about 3:1 or greater.
Claim 73
Dependent Claim
15 words
The method of claim 56 , wherein the opening is about 0.25 μm or less.
Claim 74
Dependent Claim
28 words
The method of claim 56 , wherein the conductive contact is selected from the group consisting of a local interconnect, contact, buried contact, via, plug, and filled trench.
Claim 75
Dependent Claim
19 words
The method of claim 56 , wherein the conductive contact has a thickness of about 200 angstroms or greater.
Claim 76
Dependent Claim
20 words
The method of claim 56 , wherein the conductive contact has a thickness of about 1000 to about 3000 angstroms.
Claim 77
Dependent Claim
23 words
The method of claim 56 , wherein each of the layers of the conductive contact are about 100 to about 500 angstroms thick.
Claim 78
Dependent Claim
33 words
The method of claim 56 , wherein the step of forming the fill comprises depositing the titanium nitride layer by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia.
Claim 79
Dependent Claim
39 words
The method of claim 63 , wherein the titanium nitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia over the substrate.
Claim 80
Dependent Claim
34 words
The method of claim 56 , wherein the step of forming the fill comprises depositing the titanium boronitride layer by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride, ammonia and diborane.
Claim 81
Dependent Claim
46 words
The method of claim 65 , wherein the titanium boronitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane over the substrate.
Claim 82
Dependent Claim
43 words
The method of claim 65 , wherein the gaseous mixture comprises the diborane in an amount effective to provide the conductive contact with a level of adherence to the sidewalls of the opening, with no substantial cracks being formed in the insulative layer.
Claim 83
Dependent Claim
35 words
The method of claim 65 , wherein the gaseous mixture comprises an amount of diborane effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 84
Dependent Claim
31 words
The method of claim 65 , wherein the gaseous mixture comprises the ammonia in an amount effective to provide an effective amount of conductivity to an active area within the substrate.
Claim 85
Dependent Claim
16 words
The method of claim 69 , wherein the active area comprises a source or drain region.
Claim 86
Dependent Claim
28 words
The method of claim 56 , wherein the insulative layer comprises an oxide selected from the group consisting of silicon dioxide, phosphosilicate glass, borosilicate glass, and borophosphosilicate glass.
Claim 87
Dependent Claim
13 words
The method of claim 56 , wherein the insulative layer comprises borophosphosilicate glass.
Claim 88
Dependent Claim
28 words
The method of claim 56 , wherein the step of depositing the titanium silicide layer is by plasma enhanced chemical vapor deposition using a gas comprising titanium tetrachloride.
Claim 89
Dependent Claim
28 words
The method of claim 56 , wherein the step of depositing the titanium silicide layer comprises the steps of sputtering titanium onto the substrate, and annealing the titanium.
Claim 90
Dependent Claim
29 words
The method of claim 56 , wherein the step of depositing the titanium silicide layer is by a chemical vapor deposition using titanium tetrachloride and a silicon source gas.
Claim 91
Dependent Claim
23 words
The method of claim 75 , wherein the silicon source gas is selected from the group consisting of silane, dichlorosilane, and mixtures thereof.
Claim 92
Dependent Claim
23 words
The method of claim 56 , wherein the titanium silicide layer is formed to a thickness of about 250 to about 300 angstroms.
Claim 93
Dependent Claim
33 words
The method of claim 56 , further comprising, after the step of forming the fill, the step of removing an excess portion of the fill to form the conductive contact in the opening.
Claim 94
Dependent Claim
18 words
The method of claim 78 , wherein the step of removing the fill is performed by chemical-mechanical polishing.
Claim 95
Independent Claim
106 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, the opening having sidewalls; forming a layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the opening by depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 96
Independent Claim
106 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, the opening having sidewalls; forming a layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the titanium silicide layer to fill the opening by depositing a layer of titanium nitride over the titanium silicide layer, and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 97
Dependent Claim
54 words
The method of claim 80 , wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 98
Independent Claim
170 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and filling the opening by depositing a layer of titanium nitride material over the titanium silicide layer and into the opening from a gaseous mixture comprising titanium tetrachloride and ammonia by thermal chemical vapor deposition; depositing a layer of titanium boronitride material over the titanium nitride layer from a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition; and depositing a layer of titanium nitride material over the titanium boronitride layer from a gaseous mixture comprising titanium tetrachloride and ammonia by thermal chemical vapor deposition; and repeating the steps of depositing titanium boronitride material and the titanium nitride material as needed to fill the opening, wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 99
Independent Claim
170 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and filling the opening by depositing a layer of titanium nitride material over the titanium silicide layer and into the opening from a gaseous mixture comprising titanium tetrachloride and ammonia by thermal chemical vapor deposition; depositing a layer of titanium boronitride material over the titanium nitride layer from a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition; and depositing a layer of titanium nitride material over the titanium boronitride layer from a gaseous mixture comprising titanium tetrachloride and ammonia by thermal chemical vapor deposition; and repeating the steps of depositing titanium boronitride material and the titanium nitride material as needed to fill the opening, wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 100
Dependent Claim
54 words
The method of claim 82 , wherein the titanium boronitride layer comprises an amount of boron to substantially eliminate peeling of the contact from the sidewall of the opening and cracking of the insulative layer, and an amount of nitrogen to provide an effective amount of conductivity to an active area within the substrate.
Claim 101
Independent Claim
104 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and forming a fill comprising titanium boronitride layer interposed between titanium nitride layers by depositing a titanium nitride material and a titanium boronitride material into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane.
Claim 102
Independent Claim
104 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and forming a fill comprising titanium boronitride layer interposed between titanium nitride layers by depositing a titanium nitride material and a titanium boronitride material into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane.
Claim 103
Dependent Claim
56 words
The method of claim 84 , wherein the amount of diborane and ammonia in the gas mixture is effective to provide the conductive contact with effective levels of conductivity resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 104
Dependent Claim
36 words
The method of claim 84 , wherein the amount of boron in the gaseous mixture is effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 105
Independent Claim
154 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and forming a fill comprising titanium boronitride layer interposed between titanium nitride layers by depositing a titanium nitride material and a titanium boronitride material the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane; wherein the amount of diborane and ammonia in the gaseous mixture is effective to provide the conductive contact with effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 106
Independent Claim
154 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride; and forming a fill comprising titanium boronitride layer interposed between titanium nitride layers by depositing a titanium nitride material and a titanium boronitride material the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane; wherein the amount of diborane and ammonia in the gaseous mixture is effective to provide the conductive contact with effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 107
Dependent Claim
36 words
The method of claim 87 , wherein the amount of boron in the gaseous mixture is effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 108
Independent Claim
133 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium nitride material and a titanium boronitride material into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane; wherein the amount of diborane and ammonia in the gaseous mixture is effective to provide the conductive contact with effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 109
Independent Claim
133 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing a titanium nitride material and a titanium boronitride material into the opening by thermal chemical vapor deposition using a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane; wherein the amount of diborane and ammonia in the gaseous mixture is effective to provide the conductive contact with effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 110
Independent Claim
163 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing alternating layers of titanium nitride material and titanium boronitride material into the opening by chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane to form the titanium boronitride layer; wherein the titanium boronitride layer is interposed between titanium nitride layers; and the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 111
Independent Claim
163 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and depositing alternating layers of titanium nitride material and titanium boronitride material into the opening by chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane to form the titanium boronitride layer; wherein the titanium boronitride layer is interposed between titanium nitride layers; and the flow of diborane and ammonia is effective to deposit an amount of boron and nitrogen such that the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 112
Dependent Claim
38 words
The method of claim 90 , wherein the flow of diborane is effective to deposit an amount of boron such that the conductive contact has a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 113
Independent Claim
138 words
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having at least one contact opening formed therethrough to expose the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a layer comprising titanium silicide over the exposed substrate within the contact opening; and forming a multi-layered fill within the opening comprising alternating layers of titanium nitride material and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 114
Independent Claim
138 words
A method of forming a conductive contact within a high aspect ratio opening, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having at least one contact opening formed therethrough to expose the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a layer comprising titanium silicide over the exposed substrate within the contact opening; and forming a multi-layered fill within the opening comprising alternating layers of titanium nitride material and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive contact has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 115
Independent Claim
123 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, and a titanium silicide layer overlying the substrate within the opening, the opening having sidewalls; and filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 116
Independent Claim
123 words
A method of forming a conductive component in a semiconductor device, comprising the steps of: providing a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, and a titanium silicide layer overlying the substrate within the opening, the opening having sidewalls; and filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 117
Dependent Claim
30 words
The method of claim 93 , wherein the conductive component comprises an amount of boron to provide a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 118
Independent Claim
121 words
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of: forming a titanium silicide layer over the substrate within the opening; and filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 119
Independent Claim
121 words
A method of forming a conductive component in a semiconductor device, the device comprising a silicon-comprising substrate with an overlying insulative layer having at least one opening formed therethrough to expose the substrate, comprising the steps of: forming a titanium silicide layer over the substrate within the opening; and filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the conductive component comprises amounts of boron and nitrogen such that the conductive component has effective levels of conductivity and resistivity, and a level of adhesion to the sidewalls of the opening through the insulative layer to substantially eliminate peeling of the contact from the opening sidewalls.
Claim 120
Independent Claim
134 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls; the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and forming a fill within the opening by: flowing a gaseous mixture comprising titanium tetrachloride and ammonia to deposit a layer comprising titanium nitride over the titanium silicide layer; flowing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane to deposit a layer comprising titanium boronitride over the titanium nitride layer; and flowing a gaseous mixture comprising titanium tetrachloride and ammonia to deposit a layer comprising titanium nitride over the titanium boronitride layer to fill the opening or repeating the foregoing steps to fill the opening.
Claim 121
Independent Claim
134 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls; the method comprising the steps of: forming a layer comprising titanium silicide over the substrate within the opening; and forming a fill within the opening by: flowing a gaseous mixture comprising titanium tetrachloride and ammonia to deposit a layer comprising titanium nitride over the titanium silicide layer; flowing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane to deposit a layer comprising titanium boronitride over the titanium nitride layer; and flowing a gaseous mixture comprising titanium tetrachloride and ammonia to deposit a layer comprising titanium nitride over the titanium boronitride layer to fill the opening or repeating the foregoing steps to fill the opening.
Claim 122
Independent Claim
125 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls, the method comprising the steps of: forming a seed layer comprising titanium silicide over the substrate within the opening; and depositing alternating layers of titanium nitride and titanium boronitride to fill the opening; whereby the titanium boronitride layer comprises an amount of boron effective to adhere the conductive contact to the sidewalls of the opening and substantially eliminate peeling of the conductive contact from the sidewalls of the opening and cracking of the insulative layer, and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level.
Claim 123
Independent Claim
125 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the opening defined by sidewalls, the method comprising the steps of: forming a seed layer comprising titanium silicide over the substrate within the opening; and depositing alternating layers of titanium nitride and titanium boronitride to fill the opening; whereby the titanium boronitride layer comprises an amount of boron effective to adhere the conductive contact to the sidewalls of the opening and substantially eliminate peeling of the conductive contact from the sidewalls of the opening and cracking of the insulative layer, and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level.
Claim 124
Independent Claim
184 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a seed layer comprising titanium silicide over the surface of the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride, hydrogen, and one or more carrier gases; and depositing alternating layers of titanium boronitride into the opening by thermal chemical vapor deposition by flowing a first gaseous mixture comprising titanium tetrachloride and ammonia to form titanium nitride layers, and a second gaseous mixture comprising titanium tetrachloride, ammonia and diborane to form one or more titanium boronitride layers; wherein the second gaseous mixture comprises the ammonia and diborane in amounts effective to provide a level of adhesion of the conductive contact to the insulative layer along the sidewalls of the opening, to substantially eliminate peeling of the conductive contact from the sidewalls of the opening and cracking of the insulative layer, and to provide an effective level of conductivity to a conductive area in the substrate.
Claim 125
Independent Claim
184 words
A method of forming a conductive contact in an opening within a semiconductor device, the opening formed in an insulative layer and extending to an underlying silicon-comprising substrate, the method comprising the steps of: forming a seed layer comprising titanium silicide over the surface of the substrate within the opening by plasma enhanced chemical vapor deposition using titanium tetrachloride, hydrogen, and one or more carrier gases; and depositing alternating layers of titanium boronitride into the opening by thermal chemical vapor deposition by flowing a first gaseous mixture comprising titanium tetrachloride and ammonia to form titanium nitride layers, and a second gaseous mixture comprising titanium tetrachloride, ammonia and diborane to form one or more titanium boronitride layers; wherein the second gaseous mixture comprises the ammonia and diborane in amounts effective to provide a level of adhesion of the conductive contact to the insulative layer along the sidewalls of the opening, to substantially eliminate peeling of the conductive contact from the sidewalls of the opening and cracking of the insulative layer, and to provide an effective level of conductivity to a conductive area in the substrate.
Claim 126
Dependent Claim
16 words
The method of claim 98 , wherein the conductive area comprises a source/drain of a transistor.
Claim 127
Independent Claim
90 words
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: flowing a gaseous mixture comprising titanium tetrachloride to deposit a layer of titanium silicide on the substrate; and flowing a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane, to deposit alternating layers of titanium nitride and titanium boronitride material over the titanium silicide layer; wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 128
Independent Claim
90 words
A method of forming a conductive contact within a high aspect ratio opening through an insulative layer to an underlying silicon-comprising substrate, the opening having sidewalls, the method comprising the steps of: flowing a gaseous mixture comprising titanium tetrachloride to deposit a layer of titanium silicide on the substrate; and flowing a gaseous mixture comprising titanium tetrachloride and ammonia, with and without diborane, to deposit alternating layers of titanium nitride and titanium boronitride material over the titanium silicide layer; wherein the titanium boronitride layer is interposed between titanium nitride layers.
Claim 129
Dependent Claim
39 words
The method of claim 100 , wherein the titanium nitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride and about 100 to about 1000 sccm ammonia into the opening.
Claim 130
Dependent Claim
46 words
The method of claim 100 , wherein the titanium boronitride layer is deposited by thermal chemical vapor deposition by flowing about 100 to about 500 sccm titanium tetrachloride, about 100 to about 1000 sccm ammonia, and about 100 to about 1000 sccm diborane into the opening.
Claim 131
Dependent Claim
46 words
The method of claim 102 , wherein the gaseous mixture to form the titanium boronitride layer comprises the diborane in an amount effective to provide the conductive contact with adherence to the sidewalls of the opening, with no substantial cracks being formed in the insulative layer.
Claim 132
Dependent Claim
42 words
The method of claim 102 , wherein the gaseous mixture to form the titanium boronitride layer comprises the diborane in an amount effective to provide the conductive contact with a level of thermal stress to substantially eliminate cracking of the insulative layer.
Claim 133
Dependent Claim
37 words
The method of claim 100 , wherein the gaseous mixture to form the titanium boronitride layer comprises the ammonia in an amount effective to provide an effective amount of conductivity to an active area within the substrate.
Claim 134
Independent Claim
176 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to expose the conductive area of the substrate, the opening having sidewalls; forming a seed layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the seed layer to fill the opening; filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the titanium boronitride layer comprises an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer; and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level for an effective electrical contact with the conductive area.
Claim 135
Independent Claim
176 words
A method of forming a semiconductor device, comprising the steps of: forming an insulative layer over a silicon-comprising substrate comprising a conductive area; forming an opening in the insulative layer to expose the conductive area of the substrate, the opening having sidewalls; forming a seed layer comprising titanium silicide over the substrate within the opening; and forming a layer comprising titanium boronitride over the seed layer to fill the opening; filling the opening with alternating layers of titanium nitride and titanium boronitride material; wherein the titanium boronitride layer is interposed between titanium nitride layers, and the titanium boronitride layer comprises an amount of boron effective to provide the conductive contact with a level of adhesion to the insulative layer within the opening to substantially eliminate peeling of the conductive contact from the sidewalls of the opening, and a level of thermal stress to substantially eliminate cracking of the insulative layer; and an amount of nitrogen effective to maintain the conductivity of the contact at a predetermined level for an effective electrical contact with the conductive area.
Claim 136
Independent Claim
95 words
A method for filling high aspect ratio contact openings, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having a surface and at least one contact opening formed therein to the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a seed layer comprising titanium silicide over the surface of the substrate within the contact opening; and forming a multi-layered film over the seed layer, the film comprising a layer comprising titanium boronitride interposed between layers comprising titanium nitride.
Claim 137
Independent Claim
95 words
A method for filling high aspect ratio contact openings, comprising the steps of: providing a substrate having a silicon-comprising substrate and an insulative layer formed thereon, the insulative layer having a surface and at least one contact opening formed therein to the substrate; the contact opening having an aspect ratio of at least about 3:1; forming a seed layer comprising titanium silicide over the surface of the substrate within the contact opening; and forming a multi-layered film over the seed layer, the film comprising a layer comprising titanium boronitride interposed between layers comprising titanium nitride.
Claim 138
Dependent Claim
37 words
The method of claim 107 , further comprising, after the step of forming the multi-layered film, the step of forming additional layers of the titanium boronitride layer interposed between the titanium nitride layers to fill the opening.
Claim 139
Dependent Claim
27 words
The method of claim 107 , wherein the contact opening has an aspect ratio of 3:1 or greater, and a width of about 0.25 μm or less.
Claim 140
Independent Claim
45 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact.
Claim 141
Independent Claim
45 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact.
Claim 142
Independent Claim
54 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact having a thickness of about 200 angstroms or greater.
Claim 143
Independent Claim
54 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact having a thickness of about 200 angstroms or greater.
Claim 144
Independent Claim
55 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact having a thickness of about 1000 to about 3000 angstroms.
Claim 145
Independent Claim
55 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and filling the opening with titanium boronitride to form the conductive contact having a thickness of about 1000 to about 3000 angstroms.
Claim 146
Independent Claim
52 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and forming the conductive contact by depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane into the opening.
Claim 147
Independent Claim
52 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and forming the conductive contact by depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane into the opening.
Claim 148
Independent Claim
57 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition into the opening to form the conductive contact.
Claim 149
Independent Claim
57 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition into the opening to form the conductive contact.
Claim 150
Independent Claim
132 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form the conductive contact; the gaseous mixture comprising an amount of the diborane to provide the contact with an amount of boron for effective adhesion of the contact to the insulative sidewalls of the opening to substantially eliminate peeling of the contact from the sidewalls and cracking of the insulative layer, and an amount of the ammonia to provide the contact with a level of nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 151
Independent Claim
132 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form the conductive contact; the gaseous mixture comprising an amount of the diborane to provide the contact with an amount of boron for effective adhesion of the contact to the insulative sidewalls of the opening to substantially eliminate peeling of the contact from the sidewalls and cracking of the insulative layer, and an amount of the ammonia to provide the contact with a level of nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 152
Independent Claim
111 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form the conductive contact, wherein the contact comprises an amount of boron for effective adhesion of the contact to the insulative sidewalls of the opening to substantially eliminate peeling of the contact from the sidewalls and cracking of the insulative layer, and an amount nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 153
Independent Claim
111 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form the conductive contact, wherein the contact comprises an amount of boron for effective adhesion of the contact to the insulative sidewalls of the opening to substantially eliminate peeling of the contact from the sidewalls and cracking of the insulative layer, and an amount nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 154
Independent Claim
112 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition to form a fill within the opening; the fill comprising an amount of boron for effective adhesion to the insulative sidewalls of the opening to substantially eliminate peeling of the fill from the sidewalls and cracking of the insulative layer, and an amount of nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 155
Independent Claim
112 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, the opening having insulative sidewalls, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; and depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane by thermal chemical vapor deposition to form a fill within the opening; the fill comprising an amount of boron for effective adhesion to the insulative sidewalls of the opening to substantially eliminate peeling of the fill from the sidewalls and cracking of the insulative layer, and an amount of nitrogen for an effective level of conductivity to an active area within the substrate.
Claim 156
Independent Claim
99 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; depositing a layer of titanium nitride over the titanium boronitride layer; and repeating the steps of depositing the layers of titanium nitride and titanium boronitride to fill the opening and form a multi-layered film with the titanium boronitride layer disposed between titanium nitride layers.
Claim 157
Independent Claim
99 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; depositing a layer of titanium boronitride over the titanium nitride layer; depositing a layer of titanium nitride over the titanium boronitride layer; and repeating the steps of depositing the layers of titanium nitride and titanium boronitride to fill the opening and form a multi-layered film with the titanium boronitride layer disposed between titanium nitride layers.
Claim 158
Independent Claim
70 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film with the titanium boronitride layer disposed between titanium nitride layers.
Claim 159
Independent Claim
70 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; and sequentially depositing overlying layers of titanium boronitride and titanium nitride to form a multi-layered film with the titanium boronitride layer disposed between titanium nitride layers.
Claim 160
Independent Claim
151 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; depositing a gaseous mixture comprising titanium tetrachloride and ammonia within the opening to form a layer of titanium nitride over the titanium silicide layer; depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form a layer of titanium boronitride over the titanium nitride layer; depositing a gaseous mixture comprising titanium tetrachloride and ammonia within the opening to form a layer of titanium nitride over the titanium boronitride layer; and repeating the steps of depositing the gaseous mixtures to form sequential layers of titanium nitride and titanium boronitride to form the conductive contact with the titanium boronitride layer disposed between titanium nitride layers.
Claim 161
Independent Claim
151 words
A method of forming a conductive contact in an opening in an insulative layer overlying a substrate, comprising the steps of: forming a layer of titanium silicide on the substrate within the opening; depositing a layer of titanium nitride over the titanium silicide layer; depositing a gaseous mixture comprising titanium tetrachloride and ammonia within the opening to form a layer of titanium nitride over the titanium silicide layer; depositing a gaseous mixture comprising titanium tetrachloride, ammonia and diborane within the opening to form a layer of titanium boronitride over the titanium nitride layer; depositing a gaseous mixture comprising titanium tetrachloride and ammonia within the opening to form a layer of titanium nitride over the titanium boronitride layer; and repeating the steps of depositing the gaseous mixtures to form sequential layers of titanium nitride and titanium boronitride to form the conductive contact with the titanium boronitride layer disposed between titanium nitride layers.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2007-02-23 | 2007-08-25 | 2008-02-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2011-02-23 | 2011-08-25 | 2012-02-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2015-02-23 | 2015-08-25 | 2016-02-24 | $7700.00 | Window Closed / Lapsed |