US6429063B1
Expired / Lapsed
US
⏱️ 0.0 years remaining
NROM cell with generally decoupled primary and secondary injection
Assignee: Spansion Israel Ltd
•
Filing: 2000-03-06
•
Granted: 2002-08-06
•
Expires: 2020-03-06
Abstract
Abstract A method of creating a nitride, programmable read only memory (NROM) cell includes the step of decoupling injection of channel hot electrons into a charge trapping layer of the NROM cell from injection of non-channel electrons into the charge trapping layer. The step of decoupling can include the step of minimizing the injection of the non-channel electrons into the charge trapping layer. Alternatively, it includes the step of minimizing the generation of the non-channel electrons. The present invention includes cells which have minimal injection of non-channel electrons therein.
Inventors
- 👤 Boaz Eitan
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 08:29
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0413; G; G11; G11C; G11C11/00; G11C11/56; G11C11/5671; G11C16/00; G11C16/02; G11C16/04; G11C16/0466; G11C16/0475; H10D30/60; H10D30/69
Claims Analysis
Total Claims: 34
Claim 1
Independent Claim
43 words
A method of creating a nitride, programmable read only memo (NROM) cell, the method comprising the step of: decoupling injection of channel hot electrons into a charge trapping layer of said NROM cell from injection of non-channel electrons into said charge trapping layer.
Claim 2
Independent Claim
43 words
A method of creating a nitride, programmable read only memo (NROM) cell, the method comprising the step of: decoupling injection of channel hot electrons into a charge trapping layer of said NROM cell from injection of non-channel electrons into said charge trapping layer.
Claim 3
Dependent Claim
27 words
A method according to claim 1 wherein said step of decoupling includes the step of minimizing the injection of said non-channel electrons into said charge trapping layer.
Claim 4
Dependent Claim
25 words
A method according to claim 2 wherein said step of injection minimization includes the step of minimizing the concentration of Boron deep in the substrate.
Claim 5
Dependent Claim
43 words
A method according to claim 3 wherein said NROM cell has at least Boron pocket implants and wherein said step of Boron concentration minimization includes the step of implanting pocket implants of one of Arsenic and Phosphorous deeper than said Boron pocket implants.
Claim 6
Dependent Claim
23 words
A method according to claim 2 and wherein said step of injection minimization includes the step of implanting a shallow threshold voltage implant.
Claim 7
Dependent Claim
39 words
A method according to claim 5 and wherein said threshold voltage implant step includes the step of implanting two threshold voltage implants, a first surface implant of Boron and a second deeper implant of one of Arsenic and Phosphorous.
Claim 8
Dependent Claim
14 words
A method according to claim 5 and including the step of implanting Boron pockets.
Claim 9
Dependent Claim
21 words
A method according to claim 2 and wherein said step of injection minimization includes the step of implanting deep bit lines.
Claim 10
Dependent Claim
34 words
A method according to claim 2 wherein said NROM cell has a channel and wherein said step of injection minimization includes the step of making said channel to be shorter than a standard length.
Claim 11
Dependent Claim
22 words
A method according to claim 9 and wherein said step of injection minimization also includes the step of implanting deep bit lines.
Claim 12
Dependent Claim
22 words
A method according to claim 1 wherein said step of decoupling includes the step of minimizing the generation of said non-channel electrons.
Claim 13
Dependent Claim
25 words
A method according to claim 11 wherein said step of generation minimization includes the step of minimizing the concentration of Boron deep in the substrate.
Claim 14
Dependent Claim
43 words
A method according to claim 12 wherein said NROM cell has at least Boron pocket implants and wherein said step of Boron concentration minimization includes the step of implanting pocket implants of one of Arsenic and Phosphorous deeper than said Boron pocket implants.
Claim 15
Dependent Claim
23 words
A method according to claim 11 and wherein said step of generation minimization includes the step of implanting a shallow threshold voltage implant.
Claim 16
Dependent Claim
39 words
A method according to claim 14 and wherein said threshold voltage implant step includes the step of implanting two threshold voltage implants, a first surface implant of Boron and a second deeper implant of one of Arsenic and Phosphorous.
Claim 17
Dependent Claim
14 words
A method according to claim 14 and including the step of implanting Boron pockets.
Claim 18
Dependent Claim
34 words
A method according to claim 11 wherein said NROM cell has a channel and wherein said step of generation minimization includes the step of making said channel to be shorter than a standard length.
Claim 19
Independent Claim
39 words
A method of creating a nitride, programmable read only memory (NROM) cell, the method comprising the step of: having a high ratio of surface injection to deep injection of electrons into a charge trapping layer of said NROM cell.
Claim 20
Independent Claim
39 words
A method of creating a nitride, programmable read only memory (NROM) cell, the method comprising the step of: having a high ratio of surface injection to deep injection of electrons into a charge trapping layer of said NROM cell.
Claim 21
Dependent Claim
41 words
A method according to claim 18 wherein said NROM cell has at least Boron pocket implants and wherein said step of having includes the step of implanting pocket implants of one of Arsenic and Phosphorous deeper than said Boron pocket implants.
Claim 22
Dependent Claim
22 words
A method according to claim 18 and wherein said step of having includes the step of implanting a shallow threshold voltage implant.
Claim 23
Dependent Claim
39 words
A method according to claim 20 and wherein said threshold voltage implant step includes the step of implanting two threshold voltage implants, a first surface implant of Boron and a second deeper implant of one of Arsenic and Phosphorous.
Claim 24
Dependent Claim
14 words
A method according to claim 20 and including the step of implanting Boron pockets.
Claim 25
Independent Claim
34 words
A method of creating a nitride, programmable read only memory (NROM) cell, the method comprising the step of: generating a zero substrate potential at a distance no less than 45-55 nm into said substrate.
Claim 26
Independent Claim
34 words
A method of creating a nitride, programmable read only memory (NROM) cell, the method comprising the step of: generating a zero substrate potential at a distance no less than 45-55 nm into said substrate.
Claim 27
Dependent Claim
24 words
A method according to claim 23 wherein said step of generation includes the step of minimizing the concentration of Boron deep in the substrate.
Claim 28
Dependent Claim
44 words
A method according to claim 24 , wherein said NROM cell has at least Boron pocket implants and wherein said step of Boron concentration minimization includes the step of implanting pocket implants of one of Arsenic and Phosphorous deeper than said Boron pocket implants.
Claim 29
Dependent Claim
22 words
A method according to claim 23 and wherein said step of generation includes the step of implanting a shallow threshold voltage implant.
Claim 30
Dependent Claim
39 words
A method according to claim 26 and wherein said threshold voltage implant step includes the step of implanting two threshold voltage implants, a first surface implant of Boron and a second deeper implant of one of Arsenic and Phosphorous.
Claim 31
Dependent Claim
14 words
A method according to claim 26 and including the step of implanting Boron pockets.
Claim 32
Dependent Claim
33 words
A method according to claim 23 wherein said NROM cell has a channel and wherein said step of generation includes the step of making said channel to be shorter than a standard length.
Claim 33
Independent Claim
57 words
A method of operating a nitride, programmable read only memory (NROM) cell to have minimum injection from non-channel electrons, the cell having bit lines serving as source and drain to said cell, the method comprising the step of: providing the lowest source voltage Vs which provides a desired drain to source voltage V ds to said cell.
Claim 34
Independent Claim
57 words
A method of operating a nitride, programmable read only memory (NROM) cell to have minimum injection from non-channel electrons, the cell having bit lines serving as source and drain to said cell, the method comprising the step of: providing the lowest source voltage Vs which provides a desired drain to source voltage V ds to said cell.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 2005-08-05 | 2006-02-04 | 2006-08-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2009-08-05 | 2010-02-04 | 2010-08-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2013-08-05 | 2014-02-04 | 2014-08-06 | $7700.00 | Window Closed / Lapsed |