Process for fabricating electrically alterable floating gate memory devices

Claim 2

A process for fabricating an array of floating gate memory devices on a substrate comprising the steps of: forming elongated, spaced-apart, parallel strips of silicon nitride over first regions of said substrate, said strips of silicon nitride defining elongated, parallel, spaced-apart second substrate regions between said strips; doping said second regions between said strips such that alternate ones of said second regions are doped with an n-type dopant to a first level of doping and the others of said second regions are doped with an n-type dopant to a second level of doping, said first level of doping being different than said second level of doping; growing an oxide region at said second regions; forming a plurality of first gate members from a first layer of polysilicon, said first gate members being disposed over said first regions and being insulated from said first regions; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over said first gate members and being insulated from first gate members, said second gate members being generally perpendicular to said first and second regions, whereby memory devices are realized.

Claim 3

The process defined by claim 1 including the step of growing an oxide layer over said first regions before forming said first gates, said oxide layer being approximately 120Å thick.

Claim 4

The process defined by claim 2 wherein said doping step comprises the steps of: implanting an arsenic dopant into all of said first regions; implanting a phosphorus dopant into alternate ones of said first regions.

Claim 5

A process for fabricating an array of floating gate memory devices on a substrate comprising the steps of: forming elongated, spaced-apart, parallel strips of silicon nitride over first regions of said substrate, said strips of silicon nitride defining elongated, parallel, spaced-apart second substrate regions between said strips; doping said second regions between said strips such that alternate ones of said second regions are doped with an n-type dopant to a first depth and the others of said second regions are doped with an n-type dopant to a second depth, said first depth being greater than said second depth; growing an oxide region at said second regions; removing said silicon nitride strips; forming a plurality of first gate members from a first layer of polysilicon, said first gate members being disposed over said first regions and being insulated from said first regions; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over said first gate members and being insulated from first gate members, said second gate members being generally perpendicular to said first and second regions, whereby memory devices are realized.

Claim 6

A process for fabricating an array of floating gate memory devices on a substrate comprising the steps of: forming elongated, spaced-apart, parallel strips of silicon nitride over first regions of said substrate, said strips of silicon nitride defining elongated, parallel, spaced-apart second substrate regions between said strips; doping said second regions between said strips such that alternate ones of said second regions are doped with an n-type dopant to a first depth and the others of said second regions are doped with an n-type dopant to a second depth, said first depth being greater than said second depth; growing an oxide region at said second regions; removing said silicon nitride strips; forming a plurality of first gate members from a first layer of polysilicon, said first gate members being disposed over said first regions and being insulated from said first regions; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over said first gate members and being insulated from first gate members, said second gate members being generally perpendicular to said first and second regions, whereby memory devices are realized.

Claim 7

The process defined by claim 4 including the step of growing an oxide over said first regions before forming said first gates, said oxide being approximately 120Å thick.

Claim 8

The process defined by claim 5 wherein said doping step comprises the steps of: implanting an arsenic dopant into all of said first regions; implanting a phosphorus dopant into alternate ones of said first regions.

Claim 9

A process for fabricating an array of floating gate memory devices on a substrate comprising the steps of: forming elongated, spaced-apart, parallel strips of silicon nitride over first elongated regions of said substrate, said strips of silicon nitride defining elongated, parallel, spaced-apart second substrate regions between said strips; doping said first and second regions with a n-type dopant; covering alternate ones of said second substrate regions; doping the others of said n-type regions so that said others of said n-type regions are more heavily doped with an n-type dopant; growing an oxide region over said second regions; removing said silicon nitride strips; forming a plurality of first elongated polysilicon members from a first layer of polysilicon over said first regions; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over said first members, said second members being generally perpendicular to first members; etching said first elongated members in alignment with said second elongated members so as to form floating gate members disposed between said second members and said substrate, whereby memory devices are realized.

Claim 10

A process for fabricating an array of floating gate memory devices on a substrate comprising the steps of: forming elongated, spaced-apart, parallel strips of silicon nitride over first elongated regions of said substrate, said strips of silicon nitride defining elongated, parallel, spaced-apart second substrate regions between said strips; doping said first and second regions with a n-type dopant; covering alternate ones of said second substrate regions; doping the others of said n-type regions so that said others of said n-type regions are more heavily doped with an n-type dopant; growing an oxide region over said second regions; removing said silicon nitride strips; forming a plurality of first elongated polysilicon members from a first layer of polysilicon over said first regions; forming elongated second gate members from a second layer of polysilicon, said second gate members being formed over said first members, said second members being generally perpendicular to first members; etching said first elongated members in alignment with said second elongated members so as to form floating gate members disposed between said second members and said substrate, whereby memory devices are realized.

Claim 11

The process defined by claim 7 wherein the first of said doping step comprises the implantation of arsenic and the second of said doping step comprises the implantation of phosphorus.

Claim 12

The process defined by claim 8 including the step of growing an oxide over said first regions before forming said first elongated polysilicon members, said oxide being approximately 120Å thick.