Process for forming complementary integrated circuit devices

Claim 2

In the manufacture of complementary integrated circuits in a silicon wafer, the process for forming complementary chanstops at the surface of the water between regions where transistors are to be formed comprising the steps of, providing a silicon wafer whose surface includes p-type and n-type regions in which transistors are to be formed, implanting acceptor ions selectively in the surface regions of the wafer where chanstops are to be formed in both the p-type and n-type regions, implanting donor ions selectively only into the n-type regions where the n-type chanstops are to be formed, the acceptor ions being chosen to have a greater tendency to segregate in a growing oxide than the donor ions and the dosages being substantially similar, and heating the wafer in an oxidizing atmosphere while the portions of the wafer in which chanstops are to be formed are selectively exposed for oxidizing the surface regions where chanstops are to be formed, whereby as a result of the difference in segregation characteristics, underlying the oxide there are formed in the p-type surface regions localized p-type chanstops where acceptor ions are in excess and in the n-type surface regions localized n-type chanstops where the donor ions are in excess.

Claim 3

The process of claim 1 in which boron is the acceptor and either phosphorus or arsenic is the donor.

Claim 4

The process of claim 1 in which the silicon wafer includes at its surface p-type and n-type tubs for forming the p-type and n-type regions, the tubs having been formed in a layer of higher resistivity.

Claim 5

The process of claim 1 further characterized in that where p-type and n-type surface regions are contiguous and form a p-n junction, there is formed a twin chanstop underlying the oxide.

Claim 6

In the manufacture of integrated circuits which include complementary transistors and in which chanstops are provided for isolation between transistors, the steps of, forming in a silicon wafer surface regions of opposite conductivity types, providing an implantation mask over those portions of each region in which transistors are to be formed, exposing the wafer to a boron ion beam of a first dosage for implanting boron in unmasked portions of both types of surface regions, providing an implantation mask over the p-type surface regions, exposing the wafer to a beam of ions of a second dosage taken from the group consisting of phosphorus and arsenic ions for implanting such ions in unmasked portions of the n-type surface regions, the first and second dosages being substantially the same, exposing to an oxidizing atmosphere selectively those portions of the surface regions in which chanstops are to be formed while heating the wafer in the oxidizing atmosphere for a time to oxidize the exposed portions for forming beneath the oxide p-type chanstops where boron ions were implanted and n-type chanstops where both types of ions were implanted, and forming transistor devices in the regions between the regions in which chanstops were formed.

Claim 7

In the manufacture of integrated circuits which include complementary transistors and in which chanstops are provided for isolation between transistors, the steps of, forming in a silicon wafer surface regions of opposite conductivity types, providing an implantation mask over those portions of each region in which transistors are to be formed, exposing the wafer to a boron ion beam of a first dosage for implanting boron in unmasked portions of both types of surface regions, providing an implantation mask over the p-type surface regions, exposing the wafer to a beam of ions of a second dosage taken from the group consisting of phosphorus and arsenic ions for implanting such ions in unmasked portions of the n-type surface regions, the first and second dosages being substantially the same, exposing to an oxidizing atmosphere selectively those portions of the surface regions in which chanstops are to be formed while heating the wafer in the oxidizing atmosphere for a time to oxidize the exposed portions for forming beneath the oxide p-type chanstops where boron ions were implanted and n-type chanstops where both types of ions were implanted, and forming transistor devices in the regions between the regions in which chanstops were formed.

Claim 8

In the manufacture of CMOS integrated circuits, the steps of forming in a silicon wafer contiguous surface regions of opposite conductivity types, forming islands of composite layers of silicon nitride and silicon oxide over various portions of the surface regions, implanting boron selectively into the surface regions of both conductivity types, not covered by islands, covering the p-type surface regions with an implantation mask, implanting ions from the group consisting of arsenic and phosphorus selectively into the n-type surface regions not covered by islands, the dosage being substantially the same for both implantations, removing the implantation mask from the p-type surface regions, heating the wafer in an oxidizing atmosphere for oxidizing the surface regions not covered by islands and forming under the oxidized regions p-type chanstops in the p-type surface regions and n-type chanstops in the n-type surface regions, removing the islands, and forming n-type MOS transistors in the p-type surface regions and p-type MOS transistors in the n-type surface regions previously covered by islands.

Claim 9

In the manufacture of CMOS integrated circuits, the steps of forming in a silicon wafer contiguous surface regions of opposite conductivity types, forming islands of composite layers of silicon nitride and silicon oxide over various portions of the surface regions, implanting boron selectively into the surface regions of both conductivity types, not covered by islands, covering the p-type surface regions with an implantation mask, implanting ions from the group consisting of arsenic and phosphorus selectively into the n-type surface regions not covered by islands, the dosage being substantially the same for both implantations, removing the implantation mask from the p-type surface regions, heating the wafer in an oxidizing atmosphere for oxidizing the surface regions not covered by islands and forming under the oxidized regions p-type chanstops in the p-type surface regions and n-type chanstops in the n-type surface regions, removing the islands, and forming n-type MOS transistors in the p-type surface regions and p-type MOS transistors in the n-type surface regions previously covered by islands.

Claim 10

The process of claim 6 in which the contiguous surface regions are moderately doped regions formed in a more lightly doped layer.

Claim 11

The process of claim 6 in which the more lightly doped layer overlies a more heavily doped layer.

Claim 12

The process of claim 6 in which the dosage of the boron implant is substantially the same as that of the phosphorus or arsenic implant.

Claim 13

The process of claim 9 in which the process of forming contiguous surface regions of opposite conductivity type includes the steps of forming on a substrate of relatively low resistivity an epitaxial layer of higher resistivity and like type, forming a composite silicon oxide-silicon nitride layer over the epitaxial layer and removing the composite layer from selected regions of the epitaxial layer, implanting donor ions selectively into regions of the epitaxial layer where the composite layer has been removed, heating the substrate in an oxidizing atmosphere for forming over the implanted region an oxide layer appreciably thicker than the oxide layer in the composite layer, removing the silicon nitride portion of the composite layer, and implanting acceptor ions selectively into regions of the epitaxial layer covered only by the remaining oxide layer portion of the composite layer, whereby there results in the epitaxial layer contiguous regions rich in either acceptor or donor implanted ions.

Claim 14

The process of claim 9 in which the donor and acceptor ions implanted in the epitaxial layer are of phosphorus and boron, respectively.

Claim 15

In the manufacture of complementary integrated circuits in a silicon wafer, the process for forming complementary chanstops at the surface of the wafer comprising the steps of, providing a silicon wafer whose surface includes p-type and n-type regions, masking those portions of both regions where transistors are to be formed leaving unmasked those portions where chanstops are to be formed, implanting acceptor ions selectively into portions where chanstops are to be formed in both types of surface regions and donor ions into portions where chanstops are to be formed selectively only in the n-type surface regions, the acceptor being chosen to have a greater tendency to segregate in a growing oxide than the donor ions and the dosages being substantially similar, and heating the wafer in an oxidizing atmosphere while the portions of the wafer in which chanstops are to be formed are selectively exposed for oxidizing the surface regions where chanstops are to be formed for a time sufficient that as a result of the difference in segregation characteristics underlying the oxide there are formed in the p-type surface regions localized p-type chanstops where acceptor ions are in excess and in the n-type surface regions localized n-type chanstops where the donor ions are in excess.

Claim 16

In the manufacture of complementary integrated circuits in a silicon wafer, the process for forming complementary chanstops at the surface of the wafer comprising the steps of, providing a silicon wafer whose surface includes p-type and n-type regions, masking those portions of both regions where transistors are to be formed leaving unmasked those portions where chanstops are to be formed, implanting acceptor ions selectively into portions where chanstops are to be formed in both types of surface regions and donor ions into portions where chanstops are to be formed selectively only in the n-type surface regions, the acceptor being chosen to have a greater tendency to segregate in a growing oxide than the donor ions and the dosages being substantially similar, and heating the wafer in an oxidizing atmosphere while the portions of the wafer in which chanstops are to be formed are selectively exposed for oxidizing the surface regions where chanstops are to be formed for a time sufficient that as a result of the difference in segregation characteristics underlying the oxide there are formed in the p-type surface regions localized p-type chanstops where acceptor ions are in excess and in the n-type surface regions localized n-type chanstops where the donor ions are in excess.

Claim 17

A process in accordance with claim 12 in which the silicon wafer has a surface which is initially of relatively high resistivity and in which portions of the surface are selectively implanted with acceptor ions and the remaining portions are selectively implanted with donor ions whereby the wafer has a surface which includes p-type and n-type regions which are contiguous and which are of relatively lower resistivity than the original surface.