US3983620A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned CMOS process for bulk silicon and insulating substrate device
Assignee: National Semiconductor Corp
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Filing: 1975-05-08
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Granted: 1976-10-05
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Expires: 1995-05-08
Abstract
Abstract The method for fabrication of a self-aligned gate CMOS structure which employs no additional masking steps as compared to the standard CMOS fabrication process, this improved process providing the advantages of self-alignment between the N+ and P+ source and drain diffusions with respect to their gate regions, and metal contact openings which do not overlap the edges of the P+ or N+ source and drain regions. The self-aligning gate region is defined by a silicon nitride gate layer. Several embodiments of the novel process are described.
Inventors
- 👤 Gregorio Spadea
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 15:11
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/60; H10D30/67; H10D30/674; H10D30/6757; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/017; H10D84/02; H10D84/03; H10D84/038; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10D86/00; H10P; H10P76/00; H10P76/40; Y; Y10; Y10S; Y10S148/00; Y10S148/07; Y10S438/00; Y10S438/981
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
288 words
The method for manufacture of a silicon semiconductor device comprising the steps of: forming a first oxide layer over the surface of a semiconductor substrate of a first conductivity type, forming a silicon nitride layer over said first oxide layer, masking said silicon nitride layer and thereafter etching openings through said silicon nitride layer at those regions where drain and source regions are to be subsequently formed in channel transistors of said first conductivity type, masking all those regions where channel transistors of said first conductivity type are not to be formed and leaving exposed those regions where such channel transistors are to be formed in said substrate, ion implanting a thin layer of a second conductivity type in said first conductivity type channel transistor regions in said substrate, driving said ion implanted layer into said substrate, etching said first oxide layer to form openings at the first conductivity type channel transistor source and drain regions, diffusing a dopant through said latter openings to form source and drain regions of said first conductivity type in said substrate, masking and etching said silicon nitride layer and said first oxide layer to form openings at the second conductivity type channel transistor source and drain regions, diffusing a dopant through said latter openings to form source and drain regions of said second conductivity type in said substrate, etching the silicon nitride layer at the gate regions, masking and etching the oxide formed on the surface during deposition to form contact openings to said source and drain regions, depositing a metallization layer over the device, masking to define the metal connect and interconnect openings in said metal layer, and etching the metal to form the gate electrodes and source and drain connects.
Claim 2
Independent Claim
288 words
The method for manufacture of a silicon semiconductor device comprising the steps of: forming a first oxide layer over the surface of a semiconductor substrate of a first conductivity type, forming a silicon nitride layer over said first oxide layer, masking said silicon nitride layer and thereafter etching openings through said silicon nitride layer at those regions where drain and source regions are to be subsequently formed in channel transistors of said first conductivity type, masking all those regions where channel transistors of said first conductivity type are not to be formed and leaving exposed those regions where such channel transistors are to be formed in said substrate, ion implanting a thin layer of a second conductivity type in said first conductivity type channel transistor regions in said substrate, driving said ion implanted layer into said substrate, etching said first oxide layer to form openings at the first conductivity type channel transistor source and drain regions, diffusing a dopant through said latter openings to form source and drain regions of said first conductivity type in said substrate, masking and etching said silicon nitride layer and said first oxide layer to form openings at the second conductivity type channel transistor source and drain regions, diffusing a dopant through said latter openings to form source and drain regions of said second conductivity type in said substrate, etching the silicon nitride layer at the gate regions, masking and etching the oxide formed on the surface during deposition to form contact openings to said source and drain regions, depositing a metallization layer over the device, masking to define the metal connect and interconnect openings in said metal layer, and etching the metal to form the gate electrodes and source and drain connects.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1979-10-05 | 1980-04-05 | 1980-10-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1983-10-05 | 1984-04-05 | 1984-10-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1987-10-05 | 1988-04-05 | 1988-10-05 | $7700.00 | Window Closed / Lapsed |