US4110899A
Expired / Lapsed
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Method for manufacturing complementary insulated gate field effect transistors
Assignee: Hitachi Ltd
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Filing: 1977-01-04
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Granted: 1978-09-05
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Expires: 1997-01-04
Abstract
Abstract Method for manufacturing complementary insulated gate field effect transistors of LOCOS (local oxidation of silicon) structure wherein after the formation of a well layer, an impurity having higher doping level than and the same conductivity type as a semiconductor substrate (well layer) is ion implanted at an area in the semiconductor substrate on which a field oxide layer is to be formed using a silicon nitride layer as a mask, and the semiconductor substrate surface is selectively thermally oxidized using the silicon nitride layer as a mask.
Inventors
- 👤 Kouichi Nagasawa
- 👤 Yasunobu Kosa
- 👤 Satoshi Meguro
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 20:31
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0123; H10D84/0126; H10D84/0165; H10D84/0188; H10D84/02; H10D84/03; H10D84/038; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/0125; H10W10/0126; H10W10/0127; H10W10/10; H10W10/13; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/07; Y10S148/117
Claims Analysis
Total Claims: 18
Claim 1
Independent Claim
235 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of a semiconductor substrate of a first conductivity type and forming therein a well layer of a second conductivity type, forming a thin insulating layer over the entire surface thereof and then forming a silicon nitride layer over the entire surface thereof; (b) etching away said silicon nitride layer at least those areas on which field oxide layers are to be formed; (c) introducing impurity of the second conductivity type at that area in said well layer of the second conductivity type on which the field oxide layer is to be formed; (d) heat treating the substrate to selectively thermally oxidize the areas on which the field oxide layers are to be formed, using said silicon nitride layer as a mask to form a thick field oxide layer; and (e) removing the silicon nitride layer and the underlying thin insulating layer formed in said step (a), selectively forming gate insulation layers and silicon layers on the exposed substrate and well layer, forming source regions and drain regions of MIS devices in said semiconductor substrate of the first conductivity type and the well layer of the second conductivity type using said silicon layers and said thick field oxide layers as masks, and forming diffusion layers of desired impurity concentrations beneath said thick field oxide layers.
Claim 2
Independent Claim
235 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of a semiconductor substrate of a first conductivity type and forming therein a well layer of a second conductivity type, forming a thin insulating layer over the entire surface thereof and then forming a silicon nitride layer over the entire surface thereof; (b) etching away said silicon nitride layer at least those areas on which field oxide layers are to be formed; (c) introducing impurity of the second conductivity type at that area in said well layer of the second conductivity type on which the field oxide layer is to be formed; (d) heat treating the substrate to selectively thermally oxidize the areas on which the field oxide layers are to be formed, using said silicon nitride layer as a mask to form a thick field oxide layer; and (e) removing the silicon nitride layer and the underlying thin insulating layer formed in said step (a), selectively forming gate insulation layers and silicon layers on the exposed substrate and well layer, forming source regions and drain regions of MIS devices in said semiconductor substrate of the first conductivity type and the well layer of the second conductivity type using said silicon layers and said thick field oxide layers as masks, and forming diffusion layers of desired impurity concentrations beneath said thick field oxide layers.
Claim 3
Dependent Claim
33 words
A method for manufacturing complementary insulated gate field effect transistors according to claim 1 wherein said step (b) includes a sub-step of etching away the thin insulating layer under the siliocn nitride layer.
Claim 4
Dependent Claim
24 words
A method for manufacturing complementary insulated gate field effect transistors according to claim 2 wherein said thin insulating layer is a thermal oxidation layer.
Claim 5
Dependent Claim
53 words
A method for manufacturing complementary insulated gate field effect transistors according to claim 1 wherein in said step (c) said impurity of the second conductivity type is introduced, by ion implantation, into those areas of the well layer of the second conductivity type on which the field oxide layers are to be formed.
Claim 6
Independent Claim
220 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N-type semiconductor substrate and forming a P-type well layer therein, forming a thin thermal oxidation layer over the surface thereof and then forming a silicon nitride film over the surface thereof; (b) etching away said silicon nitride layer at those areas on which field oxide layers are to be formed; (c) ion implanting donor and acceptor impurities into those areas in said N-type semiconductor substrate and the P-type well layer, respectively, on which the field oxide layers are to be formed, using a portion of said silicon nitride layer as a mask; (d) heat treating the substrate to selectively thermally oxidize those areas on which the field oxide layers are to be formed, using said silicon nitride layer as a mask for forming the field oxide layers of LOCOS structure; and (e) removing said silicon nitride layer and the underlying thin thermal oxidation layer formed in said step (a), selectively forming gate insulation layers and semiconductor layers on the exposed N-type substrate and exposed P-type well layer, forming source regions and drain regions of MIS devices in said N-type semiconductor substrate and said P-type well layer using said semiconductor layers and said field oxide layers as masks.
Claim 7
Independent Claim
220 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N-type semiconductor substrate and forming a P-type well layer therein, forming a thin thermal oxidation layer over the surface thereof and then forming a silicon nitride film over the surface thereof; (b) etching away said silicon nitride layer at those areas on which field oxide layers are to be formed; (c) ion implanting donor and acceptor impurities into those areas in said N-type semiconductor substrate and the P-type well layer, respectively, on which the field oxide layers are to be formed, using a portion of said silicon nitride layer as a mask; (d) heat treating the substrate to selectively thermally oxidize those areas on which the field oxide layers are to be formed, using said silicon nitride layer as a mask for forming the field oxide layers of LOCOS structure; and (e) removing said silicon nitride layer and the underlying thin thermal oxidation layer formed in said step (a), selectively forming gate insulation layers and semiconductor layers on the exposed N-type substrate and exposed P-type well layer, forming source regions and drain regions of MIS devices in said N-type semiconductor substrate and said P-type well layer using said semiconductor layers and said field oxide layers as masks.
Claim 8
Dependent Claim
28 words
A method for manufacturing complementary insulated gate field effect transistors according to claim 5 wherein in said step (c) the donor is phosphorus and the acceptor is boron.
Claim 9
Independent Claim
109 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N(P)-type semiconductor substrate and forming a P(N)-type well layer therein, forming a thin thermal oxidation layer over the entire surface thereon, and then forming a silicon nitride layer over the entire surface thereof; (b) etching away said silicon nitride layer and the underlying thin thermal oxidation layer at those areas on which field oxide layers are to be formed; (c) ion implanting acceptor (donor) or donor (acceptor) impurity in the exposed surface area of the substrate in the area of N(P) channel of P(N) channel device;
Claim 10
Independent Claim
109 words
A method for manufacturing complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N(P)-type semiconductor substrate and forming a P(N)-type well layer therein, forming a thin thermal oxidation layer over the entire surface thereon, and then forming a silicon nitride layer over the entire surface thereof; (b) etching away said silicon nitride layer and the underlying thin thermal oxidation layer at those areas on which field oxide layers are to be formed; (c) ion implanting acceptor (donor) or donor (acceptor) impurity in the exposed surface area of the substrate in the area of N(P) channel of P(N) channel device;
Claim 11
Dependent Claim
27 words
(d) ion implanting donor (acceptor) or acceptor (donor) impurity in the exposed surface area of the substrate in the area of P(N) channel of N(P) channel device;
Claim 12
Dependent Claim
27 words
(d) ion implanting donor (acceptor) or acceptor (donor) impurity in the exposed surface area of the substrate in the area of P(N) channel of N(P) channel device;
Claim 13
Dependent Claim
104 words
(e) heat treating the substrate to selectively thermally oxidize the exposed surface areas of the substrate using said silicon nitride layer as a mask to form thick field oxide layers; and (f) removing the silicon nitride layer and the underlying thin thermal oxidation layer formed in the step (a), selectively forming gate insulation layers and silicon layers on the exposed surface area of the substrate and well layer, forming source regions and drain regions of the respective MIS devices using said silicon layers and said thick field oxide layers as masks, and forming diffusion layers of desired impurity concentrations under said field oxide layers.
Claim 14
Dependent Claim
104 words
(e) heat treating the substrate to selectively thermally oxidize the exposed surface areas of the substrate using said silicon nitride layer as a mask to form thick field oxide layers; and (f) removing the silicon nitride layer and the underlying thin thermal oxidation layer formed in the step (a), selectively forming gate insulation layers and silicon layers on the exposed surface area of the substrate and well layer, forming source regions and drain regions of the respective MIS devices using said silicon layers and said thick field oxide layers as masks, and forming diffusion layers of desired impurity concentrations under said field oxide layers.
Claim 15
Independent Claim
86 words
A method for manufacturing a semiconductor integrated circuit device including complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N-type silicon substrate and forming a P-type well layer therein by ion implantation, forming a silicon dioxide layer over the entire surface thereof and then forming a silicon nitride layer over the entire surface thereof; (b) selectively forming a first photoresist layer on said silicon nitride layer over said N-type silicon substrate and said P-type well layer;
Claim 16
Independent Claim
86 words
A method for manufacturing a semiconductor integrated circuit device including complementary insulated gate field effect transistors comprising the steps of: (a) delimiting a portion of a surface of an N-type silicon substrate and forming a P-type well layer therein by ion implantation, forming a silicon dioxide layer over the entire surface thereof and then forming a silicon nitride layer over the entire surface thereof; (b) selectively forming a first photoresist layer on said silicon nitride layer over said N-type silicon substrate and said P-type well layer;
Claim 17
Dependent Claim
312 words
(c) etching away said silicon nitride layer and the underlying silicon nitride layer using said first photoresist layer as a mask to expose surfaces of said N-type silicon substrate and said P-type well layer; (d) covering the exposed N-type silicon substrate surface with a second photoresist layer; (e) ion implanting an acceptor impurity into the exposed surface area of said P-type well layer using said first photoresist layer as a mask; (f) removing said first and second photoresist layers and covering the exposed surface of said P-type well layer with a third photoresist layer; (g) ion implanting a donor impurity into the exposed surface area of said N-type silicon substrate using said silicon nitride as a mask; (h) removing said third photoresist film and selectively thermally oxidizing the exposed surfaces of said P-type well layer and said N-type silicon substrate using said silicon nitride layer as a mask to form thick field silicon dioxide layers; (i) etching away said silicon nitride layer and the underlying silicon dioxide layer to expose said P-type well layer and said N-type silicon substrate; (j) oxidizing the exposed surfaces of said P-type well layer and said N-type silicon substrate to form gate silicon dioxide layers; (k) forming silicon layers over entire surfaces of said field silicon dioxide layers and said gate silicon dioxide layers; (l) selectively etching away said silicon layers and said gate silicon dioxide layers to expose the surfaces of said N-type silicon substrate and said P-type well layer; (m) diffusing an acceptor impurity into the exposed N-type silicon substrate and a donor impurity into the exposed P-type well layer using the remaining silicon layer and said field silicon dioxide layers as masks to form source regions and drain regions, respectively, and (n) connecting aluminum layers to said source regions and drain regions formed in said N-type silicon substrate and said P-type well layer, respectively.
Claim 18
Dependent Claim
312 words
(c) etching away said silicon nitride layer and the underlying silicon nitride layer using said first photoresist layer as a mask to expose surfaces of said N-type silicon substrate and said P-type well layer; (d) covering the exposed N-type silicon substrate surface with a second photoresist layer; (e) ion implanting an acceptor impurity into the exposed surface area of said P-type well layer using said first photoresist layer as a mask; (f) removing said first and second photoresist layers and covering the exposed surface of said P-type well layer with a third photoresist layer; (g) ion implanting a donor impurity into the exposed surface area of said N-type silicon substrate using said silicon nitride as a mask; (h) removing said third photoresist film and selectively thermally oxidizing the exposed surfaces of said P-type well layer and said N-type silicon substrate using said silicon nitride layer as a mask to form thick field silicon dioxide layers; (i) etching away said silicon nitride layer and the underlying silicon dioxide layer to expose said P-type well layer and said N-type silicon substrate; (j) oxidizing the exposed surfaces of said P-type well layer and said N-type silicon substrate to form gate silicon dioxide layers; (k) forming silicon layers over entire surfaces of said field silicon dioxide layers and said gate silicon dioxide layers; (l) selectively etching away said silicon layers and said gate silicon dioxide layers to expose the surfaces of said N-type silicon substrate and said P-type well layer; (m) diffusing an acceptor impurity into the exposed N-type silicon substrate and a donor impurity into the exposed P-type well layer using the remaining silicon layer and said field silicon dioxide layers as masks to form source regions and drain regions, respectively, and (n) connecting aluminum layers to said source regions and drain regions formed in said N-type silicon substrate and said P-type well layer, respectively.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1981-09-04 | 1982-03-06 | 1982-09-05 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1985-09-04 | 1986-03-06 | 1986-09-05 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1989-09-04 | 1990-03-06 | 1990-09-05 | $7700.00 | Window Closed / Lapsed |