US5324675A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing semiconductor devices of a MONOS type
Assignee: Kawasaki Microelectronics Inc
•
Filing: 1993-03-30
•
Granted: 1994-06-28
•
Expires: 2013-03-30
Abstract
Abstract A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on the semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer, and a gate electrode formed on the gate insulating layer, includes the steps of: forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on the semiconductor substrate; adjusting the thickness of the oxidation-resistant layer during or after the formation thereof in such a way that the entire oxidation-resistant layer can be oxidized in a post-process in which the oxidation-resistant layer is oxidized except for that region which corresponds to the gate electrode; and oxidizing the oxidation-resistant layer except for the region corresponding to the gate electrode and forming an oxide layer around the gate electrode, whereby the oxidation-resistant layer is entirely oxidized except for the region corresponding to the gate electrode. The resulting silicon oxide layer can be used as an address gate or as the gate insulating layer of an MOS transistor gate for a peripheral circuit.
Inventors
- 👤 Itsunari Hayabuchi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 18:12
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/66; H10D64/68; H10D64/693; H10D30/00; H10D30/01; H10D30/021; H10D30/0413; H10D64/01; H10D64/013; H10D64/01302; H10D64/01332; H10D64/01336; H10D64/01344; H10D64/01346; H10D64/681; H10D64/685; H10P; H10P14/00; H10P14/60; H10P14/66; H10P14/662; Y; Y10; Y10S; Y10S438/00; Y10S438/911; Y10S438/954
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
149 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising the steps of: forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on said semiconductor substrate; adjusting the thickness of said oxidation-resistant layer during or after the formation thereof in such a way that the entire oxidation-resistant layer can be oxidized in an after-process in which said oxidation-resistant layer is to be oxidized except for that region thereof which corresponds to said gate electrode; and oxidizing said oxidation-resistant layer except for the region thereof corresponding to said gate electrode and forming an oxide layer around said gate electrode.
Claim 2
Independent Claim
149 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising the steps of: forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on said semiconductor substrate; adjusting the thickness of said oxidation-resistant layer during or after the formation thereof in such a way that the entire oxidation-resistant layer can be oxidized in an after-process in which said oxidation-resistant layer is to be oxidized except for that region thereof which corresponds to said gate electrode; and oxidizing said oxidation-resistant layer except for the region thereof corresponding to said gate electrode and forming an oxide layer around said gate electrode.
Claim 3
Independent Claim
154 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer on said semiconductor substrate, forming the oxidation-resistant layer on said first oxide layer to a thickness such that said oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (third step), and forming the second oxide layer on this oxidation-resistant layer; a second step of forming the gate electrode on the second oxide layer; and a third step of oxidizing said oxidation-resistant layer through the second oxide layer except for the region which corresponds to said gate electrode, and forming an oxide layer around said gate electrode.
Claim 4
Independent Claim
154 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer on said semiconductor substrate, forming the oxidation-resistant layer on said first oxide layer to a thickness such that said oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (third step), and forming the second oxide layer on this oxidation-resistant layer; a second step of forming the gate electrode on the second oxide layer; and a third step of oxidizing said oxidation-resistant layer through the second oxide layer except for the region which corresponds to said gate electrode, and forming an oxide layer around said gate electrode.
Claim 5
Independent Claim
184 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer on said semiconductor substrate, forming the oxidation-resistant layer on said first oxide layer, and oxidizing an upper portion of said oxidation-resistant layer to form the second oxide layer in such a way that the thickness of that portion of said oxidation-resistant layer which remains without being oxidize after the formation of said second oxide layer is such that the oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (third step). a second step of forming the gate electrode on said second oxide layer; and a third step of oxidizing said oxidation-resistant layer through the second oxide layer except for the region which corresponds to said gate electrode, and forming an oxide layer around said gate electrode.
Claim 6
Independent Claim
184 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer on said semiconductor substrate, forming the oxidation-resistant layer on said first oxide layer, and oxidizing an upper portion of said oxidation-resistant layer to form the second oxide layer in such a way that the thickness of that portion of said oxidation-resistant layer which remains without being oxidize after the formation of said second oxide layer is such that the oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (third step). a second step of forming the gate electrode on said second oxide layer; and a third step of oxidizing said oxidation-resistant layer through the second oxide layer except for the region which corresponds to said gate electrode, and forming an oxide layer around said gate electrode.
Claim 7
Independent Claim
168 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on said semiconductor substrate, a second step of forming the gate electrode on said second oxide layer; and a third step of removing the second oxide layer except for the region where said gate electrode is formed, etching the thereby exposed portion of said oxidation-resistant layer to a thickness such that this oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (fourth step); and a fourth step of oxidizing the etched oxidation-resistant layer except for the region corresponding to said gate electrode and forming an oxide layer around said gate electrode.
Claim 8
Independent Claim
168 words
A method of producing a semiconductor device of the type which includes a semiconductor substrate; a gate insulating layer of a triplex structure formed on said semiconductor substrate and composed of a first oxide layer, an oxidation-resistant layer and a second oxide layer; and a gate electrode formed on said gate insulating layer, said method comprising: a first step of forming the first oxide layer, the oxidation-resistant layer, and the second oxide layer successively on said semiconductor substrate, a second step of forming the gate electrode on said second oxide layer; and a third step of removing the second oxide layer except for the region where said gate electrode is formed, etching the thereby exposed portion of said oxidation-resistant layer to a thickness such that this oxidation-resistant layer is to be entirely oxidized by oxidation in a post-process (fourth step); and a fourth step of oxidizing the etched oxidation-resistant layer except for the region corresponding to said gate electrode and forming an oxide layer around said gate electrode.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |