Abstract An EEPROM cell structure includes two floating gate transistors separated by a select gate transistor with the select transistor being shared by the two floating gate transistors in programming, reading, and erasing a floating gate transistor. The floating gates of the two transistors are formed from a first polysilicon layer, the control gates of the two transistors are formed from a second polysilicon layer, and the select gate is formed from a third doped polysilicon layer. The channel length of the select gate transistor is fully self-aligned to the floating gate transistors. A word line is formed over the control gates and forms the select gate. The word line runs generally perpendicular to bit lines which contact the drain regions of the two floating gate transistors. Accordingly, a virtual ground flash EEPROM memory array can be fabricated using the EEPROM cell structure.
A flash EEPROM array comprising a plurality of dual-bit flash EEPROM cell structures arranged in rows and columns, each cell structure including first and second floating gate transistors separated by a select gate transistor, a plurality of bit lines interconnecting drains of floating gate transistors of cell structures aligned vertically, a plurality of word lines interconnecting select gates of cell structures aligned horizontally, floating gates of said floating gate transistors being formed from a first polysilicon layer, the control gates of all floating gate transistors being formed from a second polysilicon layer, and said word lines and said select gates being formed from a third polysilicon layer.
Claim 2
Dependent Claim
107 words
A flash EEPROM array comprising a plurality of dual-bit flash EEPROM cell structures arranged in rows and columns, each cell structure including first and second floating gate transistors separated by a select gate transistor, a plurality of bit lines interconnecting drains of floating gate transistors of cell structures aligned vertically, a plurality of word lines interconnecting select gates of cell structures aligned horizontally, floating gates of said floating gate transistors being formed from a first polysilicon layer, the control gates of all floating gate transistors being formed from a second polysilicon layer, and said word lines and said select gates being formed from a third polysilicon layer.
Claim 3
Dependent Claim
18 words
The flash EEPROM array as defined by claim 1 wherein two bits are stored between adjacent bit lines.
Claim 4
Dependent Claim
117 words
The dual-bit flash EEPROM array as defined by claim 1 wherein programming, reading, and erasing a floating gate transistor in a cell structure is accomplished according to the following table: ______________________________________
READ CELL 1 PROGRAM CELL 1 ERASE CELL 1
______________________________________
V.sub.sg 5 1.8˜2 0
V.sub.cg1 5 12 0
V.sub.cg2 12
12 0
V.sub.BL1 1˜2
5 12
V.sub.BL2 0 0 floating
______________________________________ where V sg is the voltage applied to said select gate, V cg1 is the voltage applied to a first control gate, V cg2 is the voltage applied to a second control gate, V BL1 is the voltage applied to said first bit line, V BL2 is the voltage applied to said second bit line.