Semiconductor nonvolatile memory

Abstract

Abstract PURPOSE:To make possible a writing by a supply voltage and to prevent a soft write at the time of readout by a method wherein an injection of hot electrons and the writing are performed between second and third channel regions and a drain region is formed into a thin drain region. CONSTITUTION:A channel region is constituted of first and third channel regions, which are respectively controlled by floating gates 9, and a second channel region which is controlled by a selective gate electrode 13. Moreover, a tunnel insulating film (a drain region) 8 is formed between a drain region 3 and the electrode 9, hot electrons are injected between the second and third channel regions to perform a writing and an erase is performed taking out the electrons form the electrode 9 to the region 3 by applying a high voltage to the drain region. Thereby, a memory is actuated by a supply voltage only and moreover, a soft write at the time of readout can be prevented.

Inventors

• 👤 Yoshikazu Kojima
• 👤 芳和 小島

Bibliographic Details